Raman analysis of epitaxial GaN layers grown on Si(111) by PA MBE
2020
, J. Phys.: Conf. Ser., v.1695, 1
7th International School and Conference “Saint-Petersburg OPEN 2020” on Optoelectronics, Photonics, Engineering and Nanostructures; St. Petersburg, Russian Federation; 27-30 April 2020
ISSN: 1742-6588
В книге (сборнике):
7TH INTERNATIONAL SCHOOL AND CONFERENCE “SAINT-PETERSBURG OPEN 2020” ON OPTOELECTRONICS, PHOTONICS, ENGINEERING AND NANOSTRUCTURES
Номер статьи:
#012022
Авторы:Lubyankina,EA; Toporov,VV; Mizerov,AM; Timoshnev,SN; Shubina,KYu; Bairamov,BH; Bouravleuv,AD
Авторы (ФТИ):Toporov,VV; Bairamov,BH; Bouravleuv,AD
Подразделения:
DOI:http://dx.doi.org/10.1088/1742-6596/1695/1/012022
Scopus® times cited:1
Scopus® ID:2-s2.0-85098875625
Полный текст:http://dx.doi.org/10.1088/1742-6596/1695/1/012022