Growth of GaN nanowires with InN inserts by PA-MBE
2025
, St. Petersburg. State. Polytech. Univ. J. Phys. Math., v.18, 3.1
12th International School and Conference on Optoelectronics, Photonics, Engineering and Nanostructures, SPb OPEN-2025; St. Petersburg, Russia; 20-25 May 2025
ISSN: 2304-9782
В книге (сборнике):
12th International School and Conference on Optoelectronics, Photonics, Engineering and Nanostructures, SPb OPEN-2025
Страницы:
139 - 142
Авторы:Gridchin,VO; Mintairov,AM; Shugabaev,T; Axenov,VYu; Vlasov,AS; Lendyashova,VV; Kotlyar,KP; Eliseev,IA; Khrebtov,AI; Reznik,RR; Davydov,VYu; Cirlin,GE
Авторы (ФТИ):Mintairov,AM; Axenov,VYu; Vlasov,AS; Eliseev,IA; Davydov,VYu
Подразделения:
DOI:https://doi.org/10.18721/JPM.183.126
Scopus® times cited:0
Scopus® ID:2-s2.0-inp_2172
Web of Science® times cited:0
Web of Science® ID:WOS:001645288900027
Полный текст:https://doi.org/10.18721/JPM.183.126