Intrinsic defects in GaN. II. Electronically enhanced migration of interstitial Ga observed by optical detection of electron paramagnetic resonance
2004 , Phys. Rev. B, v.69, 4
ISSN: 1098-0121

Номер статьи: #045208
Авторы:Johannesen,P; Zakrzewski,A; Vlasenko,LS; Watkins,GD; Usui,A; Sunakawa,H; Mizuta,M
Авторы (ФТИ):Vlasenko,LS DOI:http://dx.doi.org/10.1103/PhysRevB.69.045208 Scopus® times cited:15 Scopus® ID:2-s2.0-1542284044
Полный текст:http://dx.doi.org/10.1103/PhysRevB.69.045208