The Research Group of Epitaxial Dielectrics is part of the Laboratory of Spectroscopy of
Solid State at Ioffe Institute, Saint-Petersburg, Russia.
Our main area of expertise is the study of growth processes and the creation of
solid-state heterostructures with single-crystal layers of fluorides, oxides, metals and
2D materials on semiconductor and dielectric substrates by traditional and laser molecular
beam epitaxy.
In addition, we are engaged in the diagnosis of crystal and chemical structure, morphology
of surface, magnetic, electrophysical and optical properties of grown
nanoheterostructures.
Ultimately, our goal is to create prototypes of devices for applications in
microelectronics, spintronics and nanophotonics.
Main scientific interests and research areas
Transistors based on calcium fluoride and two-dimensional crystals
Calcium fluoride is a promising replacement for silicon oxide as a dielectric in
two-dimensional electronics.
To date, together with colleagues from the Technical University of Vienna, we proved
the possibility of creating field-effect transistors based on the
MoS2/CaF2/Si(111) structure
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The proposed method of transistor manufacturing included (i) growth of the
MoS2 layer by CVD and (ii) transfer it onto heteroepitaxial
CaF2/Si(111) substrate. A promising way to increase the stability of the
transistor is the direct synthesis of the semiconductor layer on the substrate. This
is what our group's efforts are currently focused on.
Mapping in magnetic resonance reflectometry
The research is aimed at solving the problem of restoring the density profile,
chemical composition, degree of oxidation of individual chemical elements, their
crystalline environment and magnetization during a non-destructive synchrotron
experiment to measure maps “energy — angle of incidence” by the method of
resonant X-ray reflectometry at the edges of absorption of elements that are part of
magnetic multilayer heterostructures with nanoscale layers.
Thin magnetic films of BaM hexaferrite
We have succeeded in growth of BaM hexaferrite (BaFe12O19)
epitaxial films on Al2O3 substrates with a
rectangular magnetic hysteresis loop for the magnetic field normal to the film plane
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Heterostructures with layers of yttrium-iron garnet (YIG)
We study the growth processes, structure and magnetic properties of heterostructures
with layers of iron-yttrium garnet Y3Fe5O12 that are
attractive for applications
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Epitaxial layers of the epsilon phase of Fe2O3
The possibility of stabilization of epitaxial layers of the little-studied epsilon
phase of Fe2O3 is shown and their magnetic properties are
measured
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Layers of NiFe2O4 with bulk-like dynamic magnetic features
We have grown the nanoheterostructures with NiFe2O4
layers by laser molecular beam epitaxy. Shown is he possibility of growing such layers
with bulk-like dynamic magnetic properties
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Heterostructures with layers of fluorides
Formation processes, dielectric properties and ionic conductivity in
heterostructures with layers of fluorides are studied
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Laboratory of Spectroscopy of Solid State
Ioffe Institute
