Home		Timetable
Wednesday, June 22
09:00-10:00	Registration
10:00-13:00	Excursion "Katharine Palace"
13:00-14:00	Lunch break
14:00-14:10	Opening and Welcome
14:10-15:40	Session 1. Growth Techniques of III-Nitrides and Alloys
15:40-15:50	Break
15:50-17:20	Session 2. Growth Techniques of III-Nitrides and Alloys
17:20-17:40	Coffee break
17:40-19:10	Session 3. Growth Techniques of III-Nitrides and Alloys
19:10-21:10	Welcome Party
Thursday, June 23
09:00-10:30	Session 4. Growth and Properties of InN and Related Alloys
10:30-11:00	Coffee break
11:00-12:00	Session 5. Growth and Properties of InN and Related Alloys
12:00-13:30	Lunch break
13:30-15:00	Session 6. Device Applications of III-Nitrides
15:00-15:20	Break
15:20-16:50	Session 7. Device Applications of III-Nitrides
16:50-17:10	Coffee break
17:10-18:10	Session 8. Device Applications of III-Nitrides
18:10-20:00	Break
20:00	Nanostructure Symposium Dinner (optional)
Friday, June 24
10:30-12:00	Panel Discussions and Closing Session
12:00-13:40	Lunch break
14:00-19:00	Excursion Peterhoff
Home		Final Programme
Wednesday, June 22
Opening and Welcome 14:00-14:10 Dr. V.Yu. Davydov, Prof. S. Gwo, and Dr. J.-Y. Chi
Session 1. Growth Techniques of III-Nitrides and Alloys 14:10-15:40 Session Chair: Prof. J.-I. Chyi W-1-1 Jian Yang, Ting-Wei Liu, Chi-Wei Hsu, Li-Chyong Chen, Kuei-Hsien Chen, and Chia-Chun Chen Preparation and Characterization of Aluminum Nitride Nanorod Arrays via Chemical Vapor Deposition W-1-2 V.V. Preobrazhensky, M.A. Putyato, B.R. Semyagin, V.G. Mansurov, S.N. Svitasheva, O.A. Shegay, A.K. Gutakovsky, Yu.G. Galitsin, K.S. Zhuravlev, A.I. Toropov, T.V. Shubina, M.G. Tkachman, and O.P. Pchelyakov Growth GaN thin films by MBE with ammonia on Al2O3 (0001) W-1-3 V.V. Preobrazhensky, M.A. Putyato, B.R. Semyagin, V.G. Mansurov, K.S. Zhuravlev, A.I. Toropov, and O.P. Pchelyakov The influence of nucleation stages on polarity of GaN films growing on Al2O3(0001) by MBE with ammonia
Session 2. Growth Techniques of III-Nitrides and Alloys 15:50-17:20 Session Chair: Dr. S.V. Ivanov W-2-4 C.C. Yang, Hsiang-Chen Wang, Cheng-Yen Chen, Yen-Cheng Lu, Chi-Feng Huang, Tsung-Yi Tang, Fang-Yi Jen, Chun-Yung Chi, Chu-Cheng Chin, Yung-Chen Cheng, Meng-Ku Chen, Jiun-Yang Chen, and Cheng-Ming Wu Indium-rich Nano-clusters in InGaN Thin Films and InGaN/GaN Quantum Wells W-2-5 P.I.Kuznetzov MOVPE growth of AlN/AlGaN heterostructures with high Al content W-2-6 E.V. Yakovlev, R.A. Talalaev, Yu.A. Shpolyanskiy, and A.S. Segal Modeling of III-nitride Chemical Vapor Deposition
Session 3. Growth Techniques of III-Nitrides and Alloys 17:40-19:10 Session Chair: Prof. C.-C. Yang W-3-7 A.F. Tsatsuilnikov, W.V.Lundin, Yu.G.Musikhin, A.V.Sakharov, D.S.Sizov, V.S.Sizov, M.A.Sinitsin, and E.E.Zavarin Technology of III-nitride materials and devises W-3-8 Wen-Cheng Ke, Huai-Ying Huang, Ching-Shun Ku, Kao-Hsi Yen, Ling Lee, Ming-Chih Lee, Wen-Hsiung Chen and Wei-Kuo Chen, Yi-Cheng Cherng, and Ya-Tong Cherng Formation of self-organized GaN dots on Al0.11Ga0.89N by alternating supply of source precursors W-3-9 E.N. Vigdorovich The thermodynamic model of nucleation mechanism at heteroepitaxial growth of GaN on sapphire
Thursday, June 23
Session 4. Growth and Properties of InN and Related Alloys 9:00-10:30 Session Chair: Prof. T.-M. Hsu Th-4-10 V.Yu. Davydov, A.A. Klochikhin, V.V. Emtsev, I.N. Goncharuk, A.V. Sakharov, V. A. Kapitonov, and B. A. Andreev Optical studies of InN and InGaN alloys Th-4-11 T.V. Shubina and S.V. Ivanov Surface-plasmon-related effects in non-stoichiometrical InN Th-4-12 Li-Chyong Chen One-dimensional nanoworld of group-III (Al, In, and Ga) nitrides - What makes them distinct from their film counterparts?
Session 5. Growth and Properties of InN and Related Alloys 11:00-12:00 Session Chair: Prof. O.P. Pchelyakov Th-5-13 S.V. Ivanov, V.N. Jmerik, T.V. Shubina, and P.S. Kopev Plasma-assisted and ammonia-based MBE growth of InN on sapphire Th-5-14 S. Gwo,C.-L. Wu, C.-H. Shen , H.-W. Lin, and H.-M. Lee Commensurately Matched InN/AlN Heterojunction: Structure, Optical Properties, and Applications
Session 6. Device Applications of III-Nitrides 13:30-15:00 Session Chair: Dr. L.-C. Chen Th-6-15 Jen-Inn Chyi, Chang-Chi Pan, Chia-Ming Lee, Wen-Jay Hsu, and Chi-Shin Fang Developments of High Efficiency InGaN-Based Light-Emitting Diodes Th-6-16 V.G.Mokerov, S.S.Shmelev, A.L.Kuznetzov, A.V.Sherbakov, L.E. Velikovsky, A.T.Grigoriev, A.V.Shustov, C.V.Shustov, V.M.Ustinov, V.V.Lundin, and A.F.Tsatsulnikov Research and Development of GaN/AlGaN based High Frequency Transistors Th-6-17 P.I.Kuznetzov and S.V.Averine AlGaN based UV Metal-Semiconductor-Metal Photodetectors
Session 7. Device Applications of III-Nitrides 15:20-16:50 Session Chair: Prof. V.G.Mokerov Th-7-18 J.-Y. Chi GaN Technology and Applications in Taiwan Th-7-19 A.A. Lebedev,O.Yu. Ledyaev, A.M. Strelchuk, A.N. Kuznetsov, A.E. Nikolaev, and A.S.Zubrilov Growth and Investigation of n-GaN/p-SiC heterojunction diodes Th-7-20 A.N. Alexeev, D.M. Krasovitsky, and V.P. Chaly Multi-layer AlN/AlxGa1-xN/GaN/AlyGa1-yN heterostructures grown by ammonia MBE for power microwave transistors
Session 8. Device Applications of III-Nitrides 17:10-18:10 Session Chair: Dr. A.A. Lebedev Th-8-21 T.-M. Hsu Optical studies on the polarization fields and localization states in InGaN alloys Th-8-22 K.A. Bulashevich, V.F. Mymrin, N.I. Podolskaya, and S.Yu. Karpov Modeling of III-nitride advanced semiconductor devices
Friday, June 24
Panel Discussions and Closing Session 10:30-12:00 Session Co-Chairs: Prof. S. Gwo and Dr. V.Yu. Davydov
JSNS-2005