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Alexander A. Kaplyanskii
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Papers
2000,
1999,
1998,
1997,
1996,
1995,
1994,
1993,
1992,
1991,
1990,
1989,
1988,
1987,
1986,
1985,
1984,
1983,
1982,
1981,
1980,
1979,
1978,
1977,
1976,
1975,
older |
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curriculum
vitae |
2000
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S.A.Basun, S.P.Feofilov, A.A.Kaplyanskii, U.Happek,
J.Choi, K.W.Jang, R.S.Meltzer
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Photoionization spectral hole burning and its erasure
in Li2Ge7O15 : Cr3+: Effects
of site-dependent energy-level shifts within the band gap
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Physical Review B 61 (19), 12848-12853 (2000)
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We report on investigations of the dependence of ionization
spectral hole burning efficiencies on the location of impurity ion energy
levels relative to both the host valence band and the conduction band.
An ideal system is Cr-doped Li2Ge7O15, where the Cr3+ ions occupy three
distinct noncentrosymmetric Ge4+ sites, which differ from one another by
the location of their charge-compensating ions. Most important for our
investigation is the large (similar to eV) and site-specific shift of the
Cr3+ energy levels relative to the host valence and conduction bands. As
a result, only one of the three sites shows persistent spectral hole burning.
It is shown that this result can be understood from an analysis of the
differences of the energy-level locations of the ground and excited states
of the three Cr3+ centers relative to the host bands. Two of the centers
have their energy levels sufficiently close to the host conduction band
such that two-step ionization, and thus persistent spectral hole burning,
can occur. However, for one of the centers the ground state lies so close
to the valence band that an erasure process involving promotion of an electron
from the valence band to the ionized center leads to the restoration of
the initial charge state. This erasure process, clearly demonstrated in
this paper, has to be considered when evaluating the hole burning potential
of doped insulators, especially those with relatively narrow band gaps.
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Y.A.Vlasov, V.N.Astratov, A.V.Baryshev, A.A.Kaplyanskii,
O.Z.Karimov, M.F.Limonov
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Manifestation of intrinsic defects in optical properties
of self-organized opal photonic crystals
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Physical Review E 61 (5), 5784-5793, Part B (2000)
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Self-organized synthetic opals possessing a face centered
cubic (fcc) lattice are promising fur fabrication of a three-dimensional
photonic crystal with a full photonic band gap in the visible. The fundamental
limiting factor of this method is the large concentration of lattice defects
and, especially, planar stacking faults, which are intrinsic to self-assembling
growth of colloidal crystal. We have studied the influence of various types
of defects on photonic band structure of synthetic opals by means of optical
transmission, reflection and diffraction along different crystallographic
directions. We found that in carefully chosen samples the stacking probability
cu can be as high as 0.8-0.9 revealing the strong preference of fee packing
sequence over the hexagonal close-packed (hcp). It is shown that scattering
on plane stacking faults located perpendicular to the direction of growth
results in a strong anisotropy of diffraction pattern as well as in appearance
of a pronounced doublet structure in transmission and reflection spectra
taken from the directions other than the direction of growth. This doublet
is a direct manifestation of the coexistence of two crystallographic phases-pure
fee and strongly faulted. As a result the inhomogeneously broadened stop-bands
overlap over a considerable amount of phase space. The latter, however,
does not mean the depletion of the photonic density of states since large
disordering results in filling of the partial gaps with both localized
and extended states.
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A.A.Kaplyanskii, S.A.Basun, U.Happek, R.S.Meltzer,
M.Raukas.
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Mechanisms of optical erasure of ionization spectral holes
in doped insulating crystals.
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Journal of Luminescence 87-89, 983-985 (2000).
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We review recently discovered processes that can lead to
the erasure of persistent spectral holes burnt via two-step ionization
(photochemical hole burning) in doped insulating crystals. These hole erasure
processes are based on photoinduced recharging of ions. Two mechanisms
are described here: acceptor transitions, which occur in the system Li2Ge7O15
: Cr3+, and electron tunneling between impurity ions in different charge
states, as observed in CaS : Eu.
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G.M.Salley, S.A.Basun, A.A.Kaplyanskii, R.S.Meltzer,
K.Polgar, U.Happek.
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Chromium centers in stoichiometric LiNbO3.
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Journal of Luminescence 87-89, 1133-1135 (2000).
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The nature of Cr3+ center in LiNbO3 has been the subject
of intense discussions in recent years. Partly, contradictory assignments
of the centers resulted from intrinsic defects in the so-called congruent
samples. More recently, stoichiometric samples, produced via the VTE process,
have become available and show a largely reduced number of Cr sites. In
this paper we present new spectroscopic data on a stoichiometric LiNbO3
:Cr3+ Sample produced using the HTTSSG process. This sample shows an even
further reduced number of lines in the so-called R-line region. In addition,
the study of this sample sheds new light on the origin of near infrared
emission lines first discovered in LiNbO3 : Cr : Mg, which might be due
to Cr3+-Nb4+ pairs. All emission lines show an unprecedented small line
width, which allows high-resolution studies on this fascinating system.
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Papers
2000,
1999,
1998,
1997,
1996,
1995,
1994,
1993,
1992,
1991,
1990,
1989,
1988,
1987,
1986,
1985,
1984,
1983,
1982,
1981,
1980,
1979,
1978,
1977,
1976,
1975,
older |
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curriculum
vitae |
1999
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S.P.Feofilov, A.A.Kaplyanskii, A.B.Kulinkin, A.B.Kutsenko,
T.N.Vasilevskaya, R.I.Zakharchenya.
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Optical spectroscopy of RE3+ ions in sol-gel
prepared alpha-Al2O3.
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Radiation Effects and Defects in Solids 151 (1-4), 131-135 (1999).
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The monolithic polycrystalline small-grain corundum alpha-Al2O3
doped with trivalent rare earth ions RE3+ (Eu3+,
Er3+, Pr3+) was produced for the first time using
the sol-gel technology. The fluorescence and absorption spectra of these
materials were studied which exhibit the sets of narrow lines belonging
to f-f transitions between RE3+ states. It was shown that Eu3+
and Er3+ ions form in corundum lattice the single dominating
type of regular centers. The energy scheme of Stark sublevels for ground
and excited states of dominating Eu3+ and Er3+ centers
in corundum was determined.
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M. van der Voort, A.V.Akimov, O.L.Muskens, J.I.Dijkhuis,
N.A.Feoktistov, A.A.Kaplyanskii, A.B.Pevtsov.
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Phonon dynamics in amorphous and nanocrystalline silicon.
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Journal of Luminescence 83-84, 161-165 (1999).
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We present the results of experiments on the decay of nonequilibrium
phonons created by pulsed laser excitation in an amorphous silicon film
(a-Si:H) with and without a high volume fraction of 5 nm crystalline Si
clusters (nc-Si). In one type of experiments, 29 cm(-1) phonons are detected
in the ruby substrate via phonon-induced luminescence and appear to decay
on a much longer time scale (much greater than 100 ns) in the film with
nc-Si than in the film without nc-Si (similar to 40 ns). In pump-probe
Raman experiments, we observe a marked increase in the decay time for high-energy
TA (similar to 150 cm(-1)) phonons in the film with nc-Si. We discuss the
results in terms of a model in which phonons propagate in loosely coupled
nanoscopic regions in the a-nc-Si material.
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J.K.Krebs, S.P.Feofilov, A.A.Kaplyanskii, R.I.Zakharchenya,
U.Happek.
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Non-radiative relaxation of Yb3+ in highly
porous gamma-Al2O3.
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Journal of Luminescence 83-84, 209-213 (1999).
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Sol-gel grown aluminum oxide is a highly porous material
composed of a network of nano-crystalline gamma-Al2O3 particles. The sol-gel
process allows the incorporation of trivalent rare-earth ions into the
crystal structure. These ions can be used to study, via optical techniques,
the structure and dynamics of the nanoparticles in this material. Here
we report on optical studies of Yb3+-doped gamma-Al2O3. We find non-exponential
decay curves for the F-2(5/2) to F-2(7/2) Yb3+ fluorescence and a strong
temperature dependence of the decay rate between 4 and 300 K. We show that
this behavior is not caused by confinement but is indicative of non-radiative
relaxation channels. The non-radiative relaxation channel is provided by
OH molecules at the surface of the gamma-Al2O3 nanoparticles, demonstrating
the importance of surface effects in nanocrystalline materials.
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A.A.Kaplyanskii, S.A.Basun, U.Happek, R.S.Meltzer.
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Photoionization spectral hole-burning and inversion symmetry
of sites in doped insulators.
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Journal of Luminescence 83-84, 335-341 (1999).
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The linear Stark shift of optical frequencies in impurity
centers lacking inversion site symmetry results in various external electric
field effects observed in persistent spectral hole-burning (PSHB) phenomena.
This paper reviews some new effects of inversionless symmetry of centers
in internal electric fields observed in PSHB of doped insulators with photoionization
hole burning. (1) In multisite R-line ((4)A(2)-E-2) spectra of Cr-3 (+)
ions, substituting Ge4 + in the inversionless position in the crystal lattice
of Li2Ge7O15 (LGO), the two-photon self-gated photoionization PSHB was
observed in the R-spectra of one site only. This drastic site dependence
of PSHB demonstrates extremely strong ( similar to eV) relative shifts
of the position within the host energy gap of the (4)A(2), E-2 levels of
Cr-3 (+) ions, located at complex centers. These centers differ in the
nature and the position of the nearby charge-compensating defect, where
the Coulomb field produces different large linear Stark shifts of the electronic
states of Cr-3 (+). (2) Photon-gated PSHB in f-d spectra of Eu-2 (+) multisites
in CaS crystal was observed with unusually broad hole wings in the case
of lines belonging to perturbed inversionless sites. This efficient off-resonant
PSHB is due to strong linear Stark shifts of the f-d transition frequencies
of Eu-2 (+) ions in time-varying Coulomb fields resulting from photoionization
and recharging of Eu-2 (+) -EU3 + ions during the hole-burning process
in optically excited crystals.
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G.M.Salley, S.A.Basun, G.F.Imbusch, A.A.Kaplyanskii,
S.Kapphan, R.S.Meltzer, U.Happek.
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Chromium centers in LiNbO3 revisited.
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Journal of Luminescence 83-84, 423-427 (1999).
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In this paper we present novel spectroscopic data clarifying
the nature of the dominant Cr3+ centers in LiNbO3. In the past, the Cr3+
centers in LiNbO3 have been the subject of intense debate, which was partly
caused by the intrinsic Li+ deficit present in the available congruent
samples, which leads to highly complex emission spectra. Recently, stoichiometric
samples have become available which show a greatly reduced number of emission
lines of defect-related high-field sites in the so-called R-line region.
We have carried out extensive absorption, emission, resonant photoexcitation,
and time-resolved measurements between 2 K and room temperature to unravel
the nature of the dominant Cr3+ sites in LiNbO3. From these studies we
conclude that the dominant luminescent center is a Cr3+ ion at a low-field
site in both stoichiometric and congruent samples.
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S.A.Basun, G.M.Salley, A.A.Kaplyanskii, H.G.Gallagher,
K.Polgar, L.Lu, U.Happek.
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A novel luminescent center in LiNbO3 : Cr :
Mg crystals.
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Journal of Luminescence 83-84, 435-439 (1999).
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We report on the observation of a novel luminescent center
in LiNbO3 : Cr : Mg. This center is characterized by a set of narrow emission
lines located in the 770 - 850 nm region which occur in addition to the
well-known broad T-4(2) emission of the major low-field Cr3+ site. The
set of narrow emission lines can be readily observed in samples containing
more than 4% Mg. All lines exhibit the same relaxation time and are strongly
rc polarized. Substitution of Mg by Zn produces the same set of lines,
indicating that the Mg ions are not directly incorporated in the novel
center, but play an essential charge compensating role. Based on our absorption,
excitation, luminescence, and fluorescent line-narrowing experiments, we
associate the novel center with an exchange coupled Cr-center.
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M. van der Voort, G.D.J.Smit, A.V.Akimov, J.I.Dijkhuis,
N.A.Feoktistov, A.A.Kaplyanskii, A.B.Pevtsov.
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Decay of nonequilibrium phonons in nanocrystalline silicon.
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Physica B 263, 473-475 (1999).
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We present results of pulsed Raman experiments at 1.8 K on
the lifetimes of phonons in silicon nanocrystals embedded in amorphous
silicon (a-nc-Si:H). In the spectral region of the TO vibrations in the
nanocrystallites, the observed dynamics is different both from that found
in a-Si:H and c-Si. The TO-phonon decay appears to become slower with decreasing
phonon frequency and crystallite size. That smaller nanoparticles have
a slower anharmonic decay may be explained by the effect of phonon confinement.
Furthermore, for TA-like vibrations in a-nc-Si:H we measured a much longer
decay time (similar to 50 ns) than for the same vibrations in a-Si:H.
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S.P.Feofilov, A.A.Kaplyanskii, A.B.Kulinkin, R.I.Zakharchenya.
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Optical studies of terahertz phonons dynamics in small-grain
polycrystalline corundum.
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Physica B 263, 695-697 (1999).
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The dynamics of terahertz acoustic phonons generated by optical
pumping in ceramic-like alpha-Al2O3 with grain size similar to 100 nm produced
with the help of sol-gel technology was studied with the technique of optical
detection of phonons by observation of probe Cr3+ and Mn4+ ions fluorescence.
The dynamics of phonon distribution is very slow ( similar to ms) and drastically
differs from that in regular alpha-Al2O3 ceramics with micron grain size
and is similar to that observed earlier in oxide glasses. The results are
discussed in the framework of studies of phonons in different structured
and spatially restricted Al2O3 materials with different ratios between
phonon wavelength lambda and crystallite size a. It is shown that the acoustic
mismatch model which describes phonon scattering in regular ceramics is
not valid for small-grain sol-gel produced ceramics-like material.
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Papers
2000,
1999,
1998,
1997,
1996,
1995,
1994,
1993,
1992,
1991,
1990,
1989,
1988,
1987,
1986,
1985,
1984,
1983,
1982,
1981,
1980,
1979,
1978,
1977,
1976,
1975,
older |
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curriculum
vitae |
1998
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A.A.Kaplyanskii, A.B.Kulinkin, A.B.Kutsenko, S.P.Feofilov,
R.I.Zakharchenya, T.N.Vasilevskaya.
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Optical spectra of triply-charged rare-earth ions in polycrystalline
corundum.
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Physics of the Solid State 40 (8), 1310-1316 (1998).
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Solid samples of polycrystalline corundum alpha-Al2O3 activated
by triply-charged rare-earth ions RE3+ (R=Eu3+, Er3+, Pr3+) were synthesized
by the sol-gel technology. Characteristic narrow-line optical absorption
and luminescence spectra produced by intraconfigurational 4f-4f transitions
in RE3+ ions have been measured. RE3+ ions have been established to form
one dominant type of optical centers in the corundum matrix, and the energy
diagram of Eu3+ and Er3+ Stark levels in corundum has been determined.
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A.A.Kaplyanskii, S.A.Basun, M.Raukas, U.Happek,
J.Rennie, J.C.Vial, W.M.Yen, R.S.Meltzer.
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Non-resonant hole burning in CaS : Eu by photoinduced
recharging of Eu ions.
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Journal of Luminescence 76-77, 292-294 (1998).
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Persistent spectral hole burning has been observed on the
zero-phonon lines of the main and several perturbed sites of Eu2+ in CaS:Eu
single crystals. Hole burning occurs by two-step photoionization, can be
strongly gated with IR irradiation, and takes place by excited-slate absorption
from the metastable 4f(6)5d excited state to the conduction band followed
by electron transport to Eu3+ centers which are the dominant traps. Unusually
broad similar to 100 GHz wings were observed in hole spectrum for perturbed
Eu2+ sites. This is explained by a new off-resonant hole-burning mechanism
due to the linear Stark effect of inversionless Eu2+ sites in time-varying
internal Coulomb fields produced by dynamical recharging of Eu ions in
the course of hole-burning process.
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Papers
2000,
1999,
1998,
1997,
1996,
1995,
1994,
1993,
1992,
1991,
1990,
1989,
1988,
1987,
1986,
1985,
1984,
1983,
1982,
1981,
1980,
1979,
1978,
1977,
1976,
1975,
older |
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curriculum
vitae |
1997
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V.N.Astratov, Y.A.Vlasov, O.Z.Karimov, A.A.Kaplyanskii,
Y.G.Musikhin, N.A.Bert, V.N.Bogomolov, A.V.Prokofiev.
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Photonic band structure of 3D ordered silica matrices.
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Superlattices and Microstructures 22 (3), 393-397 (1997).
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The symmetry and orientation of a photonic lattice of 3D
ordered porous silica matrices (synthetic opals) are determined by analysis
of transmission electron micrographs. By optical transmission measurements
the photonic band edges are mapped out at points L and K of the Brillouin
zone. It is shown that modulating the refractive index of opal pores by
filling them with liquids results in variation of the light attenuation
length within the forbidden gap. To increase the refractive index contrast
of the lattice, the pores of opals were filled with CdS. A dramatic decrease
in attenuation length is observed for opal/CdS. The parameters of a photonic
lattice with a 'pseudo-gap', that is, with a prominent depletion of the
photonic density of states, are estimated.
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A.V.Akimov, A.A.Kaplyanskii, D.A.Mazurenko, E.S.Moskalenko,
A.L.Zhmodikov, L.J.Challis, T.S.Cheng, C.T.Foxon.
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Exciton tunnelling induced by nonequilibrium phonons in
slightly asymmetric double quantum wells.
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physica status solidi (b) 204 (1), 400-403 (1997).
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Studies have been made of the effect of nonequilibrium phonons
on the population of coupled exciton states in GaAs/(AlGa)As double quantum
wells (DQWs) with very similar widths. Comparison of luminescence spectra
from the DQWs measured in the presence of nonequilibrium phonons with the
spectra obtained in thermal equilibrium shows that the changes in exciton
population induced hy phonons could either be due to phonon-assisted tunnelling
or to exciton heating.
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S.A.Basun, M.Raukas, U.Happek, A.A.Kaplyanskii,
J.C.Vial, J.Rennie, W.M.Yen, R.S.Meltzer.
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Off-resonant spectral hole burning in CaS:Eu by time-varying
Coulomb fields.
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Physical Review B 56 (20), 12992-12997 (1997).
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Persistent spectral hole burning has been observed on the
zero-phonon lines of the main site and several perturbed sites of Eu2+
in CaS:Eu single crystals. Hole burning occurs by two-step photoionization,
can be strongly gated with IR irradiation, and takes place by excited-state
absorption from the metastable 4f(b)5d excited state to the conduction
band followed by electron transport to Eu3+ centers which are the dominant
traps. A complex hole structure consisting of a narrow feature (200 MHz),
and broader features (approximate to 5 and approximate to 100 GHz) is observed.
A mechanism is described for the occurrence of these unusually broad features.
Time-varying internal electric fields which occur during the hole burning
due to photoionization and trapping can lead to burning of holes at frequencies
non-resonant with that of the laser. In addition, a mechanism for hole
erasure, tunneling between Eu ions, is demonstrated. This mechanism is
identified from the frequency dependence of the hole erasure which follows
the Eu2+ absorption, and the linear dependence of the photoconductivity
and hole erasure efficiency on irradiation power, both of which indicate
erasure in a single-photon process.
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A.V.Akimov, E.S.Moskalenko, A.L.Zhmodikov, D.A.Mazurenko,
A.A.Kaplyanskii, L.J.Challis, T.S.Cheng, C.T.Foxon.
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Luminescence of excitons in slightly asymmetric double
quantum wells.
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Physics of the Solid State 39 (4), 649-653 (1997).
-
We report the first studies of exciton luminescence spectra
from asymmetric double quantum wells (DQWs) of very similar width. The
DQWs were of GaAs/AlGaAs and the differences in widths of the coupled wells
were one or two monolayers. The coupled direct and indirect exciton states
anticross with a resonance splitting of 1.33 meV. An additional luminescence
line appearing at low temperatures is identified as a localized indirect
exciton.
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S.P.Feofilov, A.A.Kaplyanskii, R.I.Zakharchenya.
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Luminescence and laser spectroscopy of highly porous gamma-Al2O3
doped with 3d- and 4f-ions: Effects of spatial phonon confinement.
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Journal of Luminescence 72-74, 41-42 (1997).
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Inhomogeneously broadened luminescence spectra of Cr3+, Eu3+
and Pr3+ ions in sol-gel-grown monolithic highly porous Y-Al2O3 were observed.
In FLN and HB experiments, the interaction of ions with the size-resonant
terahertz acoustic vibrations of crystalline nanoparticles which form the
porous network was studied. The incorporation of Eu3+ and Pr3+ into alpha-Al2O3
(corundum) lattice is demonstrated in annealed (T > 1200 degrees C) sol-gel-prepared
samples.
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V.N.Astratov, Y.A.Vlasov, V.N.Bogomolov, A.A.Kaplyanskii,
O.Z.Karimov, D.A.Kurdjukov, A.V.Prokofiev.
-
Influence of refractive index contrast on photonic band
gap in 3D periodic SiO2 matrices filled with a semiconductor.
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Compound Semiconductors 1996,
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Institute of Physics Conference Series (155), 73-76 (1997).
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By spectral transmission measurements the optical stop-bands
in 3D periodic SiO2 matrices (synthetic opals) are studied as a function
of the refractive index contrast. In order to vary the refractive index
contrast the pores of opals were filled with various liquids and with semiconductor
microcrystals. In the latter case a dramatic decrease of Bragg-defined
light attenuation length within the stopband was observed indicating strong
perturbation of photonic states. The parameters of photonic lattice of
the synthetic opals required to achieve a prominent depletion of the photonic
density of states (pseudogap) are estimated.
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Y.A.Vlasov, V.N.Astratov, O.Z.Karimov, A.A.Kaplyanskii,
V.N.Bogomolov, A.V.Prokofiev.
-
Existence of a photonic pseudogap for visible light in
synthetic opals.
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Physical Review B 55 (20), 13357-13360 (1997).
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Synthetic opals, composed of submicron silica spheres close
packed in a three-dimensional fee lattice, are shown to display photonic
stop bands at optical frequencies. We have investigated the light attenuation
within the stop band as a function of refractive index contrast. Based
on measurements of the Bragg attenuation length and on theoretical considerations,
we show that a prominent depletion of the photonic density of states (pseudogap)
can be achieved in opals by adjusting the volume packing fraction of the
spheres and increasing the refractive index of the pores. To approach the
pseudogap criterion the pores of opal were impregnated with CdS nanocrystals.
We find a dramatic decrease of the attenuation length in opal-CdS, which
indicates the strong perturbation of photonic states.
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S.P.Feofilov, A.A.Kaplyanskii, A.B.Kutsenko, T.N.Vasilevskaya,
R.I.Zakharchenya.
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Sol-gel technology grown monolithic highly porous aluminum
oxide with chromium and rare earth ions and size-resonant terahertz acoustic
vibrations of nanocrystalline particles.
-
Proc. of the 13th Internat. Conf. on Defects in Insulating Materials (ICDIM
96),
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Materials Science Forum 239-241, 687-690 (1997).
-
Monolithic highly porous aluminum oxide synthesized by sol-gel
technology is built of crystalline gamma-Al2O3 nanometer sized particles.
In the present work highly porous gamma-Al2O3 is doped with 3d (Cr3+) and
4f (Eu3+, Pr3+) ions. Observation of narrow-band optical spectra of these
ions in gamma-Al2O3 enabled us to exploit the idea of optical probe ions
for the studies of general properties of doped porous insulators. In different
spectroscopic experiments the lowest-frequency size-quantized acoustic
vibrations of nanocrystalline particles were revealed. A very long decay
time of these vibrations was observed. In the experiments with thermal
treatment of doped gamma-Al2O3 resulting in the transition from gamma-phase
to alpha-Al2O3 (corundum) the possibility of incorporation of rare earth
ions into the corundum lattice was demonstrated.
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Papers
2000,
1999,
1998,
1997,
1996,
1995,
1994,
1993,
1992,
1991,
1990,
1989,
1988,
1987,
1986,
1985,
1984,
1983,
1982,
1981,
1980,
1979,
1978,
1977,
1976,
1975,
older |
|
curriculum
vitae |
1996
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D.A.Mazurenko, A.V.Akimov, E.S.Moskalenko, A.L.Zhmodikov,
A.A.Kaplyanskii.
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Tunnelling of direct and indirect excitons in slightly
asymmetric double quantum wells.
-
Acta Physica Polonica A 90 (5), 895-898 (1996).
-
We report the first studies of luminescence spectra from
asymmetric double quantum wells of GaAs with widths around 100 Angstrom
differing by only one (2.8 Angstrom) or two monolayers. Studies of the
position and intensity of the direct and indirect exciton lines suggest
the existence of acoustic phonon-assisted tunnelling between exciton states
separated by a few meV. At temperatures 10-20 K the electron tunnelling
process is fast enough to maintain thermal equilibrium between these direct
and indirect excitons which are connected with holes in the same quantum
well.
-
V.N.Astratov, Y.A.Vlasov, O.Z.Karimov, A.A.Kaplyanskii,
Y.G.Musikhin, N.A.Bert, V.N.Bogomolov, A.V.Prokofiev.
-
Photonic band gaps in 3D ordered fcc silica matrices.
-
Physics Letters 222 (5), 349-353 (1996).
-
The photonic band structure of 3D ordered silica matrices
was studied by optical transmission measurements. A decrease of the light
attenuation length within the forbidden gap was observed after filling
of the opal pores with CdS microcrystals. The parameters of a photonic
lattice required for a depletion of the photonic density of states were
estimated.
-
A.A.Kaplyanskii, M.B.Melnikov, S.P.Feofilov.
-
Distribution of nonequilibrium tetrahertz acoustic phonons
in the dense crystalline ceramics based on alpha-Al2O3.
-
Fizika Tverdogo Tela 38 (5), 1434-1445 (1996).
-
S.A.Basun, T.Danger, A.A.Kaplyanskii, D.S.McClure,
K.Petermann, W.C.Wong.
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Optical and photoelectrical studies of charge-transfer
processes in YAlO3:Ti crystals.
-
Physical Review B 54 (9), 6141-6149 (1996).
-
The donor and acceptor charge-transfer transitions in YAlO3:Ti3+/Ti4+
were investigated through absorption, emission, excitation, one-photon
and two-photon photoconductivities, excited-state absorption, and thermoluminescence.
The results are contrasted to similar studies previously made on Al2O3:Ti3+/Ti4+.
The dominant Ti3+ population has a photoionization threshold at 37 000
cm(-1). The lowest energy Ti4+ charge transfer transition has its zero-phonon
energy near to 33 900 cm(-1). The sum of these two quantities agrees with
the reported band-gap energy of YAlO3. The position of the Ti3+/Ti4+ level
in the band gap of YAlO3 is determined by these measurements. Stimulated
emission from the (2)E State of Ti3+ is limited by photoionization from
this state.
-
S.P.Feofilov, A.A.Kaplyanskii, R.I.Zakharchenya, Y.Sun,
K.W.Jang, R.S.Meltzer.
-
Spectral hole burning in Eu3+-doped highly
porous gamma-aluminum oxide.
-
Physical Review B 54 (6), R3690-R3693 (1996).
-
Transient and persistent spectral holes were burned in the
F-7(0)-D-5(0) transition of Eu3+ ions in macromonolithic transparent porous
nanocrystalline gamma-Al2O3 produced by sol-gel technology. An unusual
temperature dependence of the transient hole width was observed that differs
markedly from that in either crystalline or disordered systems. This temperature
dependence is explained in terms of Raman processes involving size-resonant
vibrations of the nanoparticles comprising the structure. Possible mechanisms
of hole burning are suggested.
-
A.V.Akimov, E.S.Moskalenko, L.J.Challis, A.A.Kaplyanskii.
-
Interaction of phonons with 2D exciton gas.
-
Physica B 220, 9-12 (1996).
-
We give an overview of experiments in which luminescence
detection of nonequilibrium phonons in semiconductors is used to study
the interaction of acoustic phonons with two-dimensional excitons. Questions
which are specific for the 2D exciton-phonon interaction are discussed:
momentum conservation in the exciton-phonon interaction; role of exciton-exciton
collisions; drag of 2D excitons by phonons; 2D excitons as a phonon spectrometer.
-
E.S.Moskalenko, A.V.Akimov, A.A.Kaplyanskii, A.L.Zhmodikov,
L.J.Challis, T.S.Cheng, C.T.Foxon.
-
Effect of nonequilibrium acoustic phonons on exciton states
in interrupted grown GaAs/Al0.33Ga0.67As quantum
wells.
-
Physica B 220, 59-61 (1996).
-
We present the first studies of the effect of heat pulses
on the exciton luminescence from GaAs/Al0.33Ga0.67As quantum wells (QW)
prepared using growth interrupts to reduce the interface step density.
We have observed the redistribution of excitons between the main thinner
part and islands one monolayer thick of the QW induced by the heat pulses.
The effect strongly depends on the relative position of heater and exciton
gas and is discussed in terms of the drag of free excitons produced by
''phonon wind''.
-
P.A. van Walree, A.F.M.Arts, H.W. de Wijn, A.A.Kaplyanskii.
-
Nonequilibrium phonons in Cr3+-doped germanate
glass.
-
Physica B 220, 757-759 (1996).
-
The optically induced phonon distribution in Cr3+-doped germanate
glass is investigated after pulsed laser excitation. Via the anti-Stokes
spectrum a nonequilibrium phonon distribution is observed, which is characterized
by a marked overpopulation at higher frequencies, and persists over several
milliseconds.
-
S.P.Feofilov, A.A.Kaplyanskii, M.B.Melnikov.
-
Transport of terahertz nonequilibrium acoustic phonons
in dense corundum ceramics.
-
Physica B 220, 773-774 (1996).
-
The propagation of nonequilibrium terahertz acoustic phonons
in dense alpha-Al2O3 ceramics with grain size similar to 10 mu m was studied.
Phonons were generated by the heat pulse technique and optical detection
of 29 cm(-1) (0.874 THz) phonons via the Cr3+ impurity ions fluorescence
was used. The diffusive propagation of phonons from heater to optical detector
was observed with mean free path of phonons (l) over bar = 150 mu m which
is significantly larger than the grain size. This value is in agreement
with the result of computer calculation of (l) over bar taking into account
reflection and refraction at interfaces of disoriented alpha-Al2O3 single-crystalline
grains in the framework of acoustic mismatch model.
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