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Yu.V. Trushin
Problems of modern energetics.
L., 1982, Znanie, 16 pages.
A.N. Orlov, Yu.V. Trushin
Point Defect Energies in Metals.
(in Russian)
Moscow: Energoatomisdat, 1983, 81 pp.
V.V. Kirsanov, A.L. Suvorov, Yu.V. Trushin
Processes of Radiation Defect Formation in Metals.
(in Russian)
Moscow:
Energoatomisdat, 1985, 222 pp.
S. N. Romanov, Yu. V. Trushin, V. I. Shtan'ko
Computer Modelling of radiation processes in solid state bodies.
(in russian)
Methodical directions. LTI im. Lensoveta, Len., 40 pages, 1988
V. V. Kirsanov, A. N. Orlov, A. M. Parshin, A. L. Suvorov, Yu. V. Trushin
Physical aspects of radiation damages in metals and alloys
Chapter 1 in: Structure and radiation damages of construction materials
M., Metallurgiya, part 1, pp 12-74, 1996
Trushin Yu.V.
Theory of Radiation Processes in Metal Solid Solutions.
New York, Nova Science Publishers Inc. 1996, 405 pp.
Trushin Yu.V.
Course of Physical Basis of Radiation Material Science
(in Russian)
SPb TU, 1996, 80 pp.
Trushin Yu.V.
Physical Material Science
(Textbook for
Technical Universities) (in Russian)
St.Petersburg: Nauka, 2000, 286 pp.
Trushin Yu.V.
Radiation processes in multicomponent materials (theory and computer modeling).
(in Russian)
St.Petersburg: Ioffe Phisical Technical Institute, 2002.
Yu. V. Trushin and A. N. Orlov
Theoretical estimates of radiation swelling
Sov. Phys. Tech. Phys. vol. 31(7), July 1986
Analytical methods of estimated radiation swelling are considered and a general technique is developed for solving all necessary equations. Several methods (in addition to decreasing the total number of pores) are suggested for decreasing the swelling.
Yu. V. Trushin
Theory of radiation processes in crystals
Sov. Phys. Tech. Phys., vol. 36(11), 1991, pp. 1236-1239
Fundamental equations are derived and solved which are suitable for the development of a self-consistent theory of radiation processes in crystals. The theoretical results are compared with experimental data on the growth kinetics for precipitates of secondary phase and for radiation swelling.
Yu. V. Trushin
Theory of radiation processes in decomposed solid solutions
J. Nucl. Materials, vol. 185, 1991, pp. 279-285
A general theoretical description is presented for the process of radiation damage in materials. Some analytical dependences of physical quantities are given, which were obtained from a general approach. It is shown that it is necessary to calculate the characteristics self-consistently and to take into account inhomogeneity in the point-defect distribution around sinks. The analytical dependences are compared to the results of physical and computer experiments.
Yu. V. Trushin
A theoretical description of radiation-induced processes in multicomponent materials
The Physics of
Metals and Melaltography, vol. 73(4), 1992, pp. 362-372
A short survey is made of the works which have contributed lo a theoretical description of the main physical processes occurring in irradiated multicomponent materials in three interrelated stages of radiation damage. The application of the theory of radiation-induced processes in these materials is considered, in particular, for determining the energy parameters of point defects and the adsorption characteristics of structural sinks.
Yu. V. Trushin
Effect of pre-precipitates of a secondary phase on the radiation swelling of decomposing solid solutions. I. General theory
Sov. Phys. Tech. Phys., vol. 37(4), 1992, pp.
353-359
A general theory is derived for the radiation swelling of a heterogeneous material. A study is made of how the swelling of a solid solution undergoing decomposition as a result of irradiation is affected by precipitates of a secondary phase that are found in a coherent state.
Yu. V. Trushin
Effect of pre-precipitates of a secondary phase on the radiation swelling of decomposing solid solutions. II. Anomalous recombination of unlike radiation defects
Sov. Phys. Tech. Phys., vol.
37(4), 1992, pp. 360-367
A physical model is proposed for the anomalous recombination of unlike radiation defects in solid solutions undergoing decomposition as the result of irradiation. The precipitating coherent pre-precipitates initiate the formation of small interstitial clusters, which act as recombination centers in these materials. The rate of radiation swelling decreases as a result of the anomalous recombination.
Yu. V. Trushin
Theoretical concepts of radiation swelling of materials and the characteristics of sinks
Tech. Phys., vol. 39(6),
1994, pp. 564-568
A technique for analytical calculation of the radiation swelling of both pure materials and alloys is demonstrated. It is shown that the use of a simplified expression for the bias factor Q is incorrect.
Trushin Yu. V., Kulikov D. V., Kharlamov V. S.
High-dose radiation processes in multiatomic and multicomponent materials: theory and computer modelling.
(in russian)
Izv. RAN, ser. phys, v. 62, N 7, 1998, pp. 1421-1424
Yu.V.Trushin, D.V. Kulikov
Theory and computer simulation of radiation defects in crystals
Proc.of the 4th Moscow Int. ITEP School of Physics, Zvenogorod, Moscow,
Feb.5-16, pp.84-112, 2001
The methods and approaches of theoretical investigations of radiation processes in solids are presented. This includes primary effects of atoms displacements (ballistic processes), diffusion processes, evolution of microstructure during and after irradiation and resulting changes in material properties. Several examples of using the theory and simulation for investigation of radiation processes are presented.
Solid State Physics, vol. 16(11), 1974, pp. 3435-3436
Kinetics of cascade formation in crystalls
(in russian
Trushin Yu. V.
The Physics of Metals and Metallography, vol. 40(1), 1975, pp. 15-20
To the theory of radiation cascades in crystall
Yu. V. Trushin
The Physics of Metals and Metallography, vol. 41(5), 1976, pp. 925-932
To the theory of radiation embrittlement of metals
Orlov A. B., Trushin Yu. V.
Radiation Effects, 1981, vol. 56, pp. 193-198
Theory of the spatial distribution of defects in radiation cascades in crystals. I. The cascade of moving atoms
A. N. Orlov and Yu. V. Trushin
The kinetic Eq. (2) is derived governing the flux density of moving atoms in a radiation cascade with account of scattering of moving atoms, ejection of host atoms and formation of dynamic crowdions. The solution of Eq. (2) is presented as a series expansion in orthogonal polynoms. Lindhard's interaction cross-section of moving atoms with hosts is used The zeroth-order moment of the flux density determines the flux of moving atoms with energy e and the cascade function. The spatial distribution of moving atoms is obtained in the zeroth-order approximation.
Radiation Effects, 1981, vol. 56, pp. 199-204
Theory of the spatial distribution of defects in radiation cascades in crystals. II. The structure of the cascade region
A.N. Orlov and Yu. V. Trushin
The spatial distribution of vacancies and interstitials in radiation cascades in crystals is calculated with account of instantaneous recombination of Frenkel pairs during the formation of the cascade. Analytical expressions (15), (18) are obtained for the shape of the depleted zone.
Sov. Phys. Tech. Phys., vol. 27(6), 1982, pp. 651-654
Focusing of a pulse in diatomic close-packed rows in crystals (small-angle approximation)
S. K. Dzhaparidze, A. N Orlov, and Yu. V. Trushin
The model of a diatomic chain with alternating atoms having different masses is considered. New types of focusing motions are found, namely even and odd focusons and defocusons. The energy conditions under which recoil atoms appear at small angels are indicated. The dependences of the atom recoil angle on the number of the collision along the collision chain and the produced transition of a defocuson into a focuson are investigated.
Sov. Phys. Tech. Phys., vol. 27(6), 1982, pp. 654-657
Focusing collisions in isolated diatomic chains
S. K. Dzhaparidze, A. N. Orlov, Yu. V. Trushin
Sov. Phys. Tech. Phys., vol. 30(6), 1985, pp. 718-719
Possible mechanism for an increase in the mean free path during successive collisions in polyatomic crystals
S. K. Dzhaparidze and Yu. V. Trushin
Collision cascades (chains of successive collisions) can occur in polyatomic crystals along the densely packed planes, which contain several types of atoms mass separated by distances. The additional energy transfer in secondary collisions along the chain is associated with a substantial increase in the mean free path, because repeated collisions can occur over the entre length of the chain.
Sov. Phys. Tech. Phys., vol. 30(9), 1985, pp. 1066-1067
Chains of substituting collisions in diatomic crystals
S. K. Dzhaparidze and Yu. V. Trushin
In this note wr analyze how the surrounding atomic rows influence the distribution of chains of successive substitution head-on collisions in the context of the previously considered focused collision model for isolated atomic rows consisting of two typs of atoms.
Sov. Tech. Phys. Lett., vol. 16(4) 1990, pp. 260-262
Influence of diffusion in the thermal spike on the failure of ion-etching methods of analyzing the depth distribution of impurities
M. P. Vatnik and Yu. V. Trushin
For determination of the concentration profiles of an impurity as a function of the depth into the sample, various methods are used which make use of ion etching with subsequent (or simultaneous) analysis of the surface by the methods of secondary ion mass spectrometry (SIMS), Auger electron spectroscopy (AES), etc. However, in the course of sputtering of the surface, mass transport can occur in the sample and lead to distortion of the initial profile of the impurity distribution and degradation of the resolution of the method.
Sov. Tech. Phys. Lett., vol. 9(5), 1983, pp. 243-244
Intensified recombination of unlike defects in supersaturated solid solutions
Parshin A. M., Trushin Yu. V.
It has shown experimentally and theoretically that special alloying can reduce the rate of radiation swelling and rate of radiation-induced void formation, through a decrease in the fluxes of interstitial atoms to remote structural sinks. The mechanism involved is the production of system of second-phase precursors with the corresponding stress fields in the matrix; the effect is to intensify the recombination of unlike defects.
Sov. Tech. Phys. Lett., vol. 9(5), 1983, pp. 263-264
Radiation-induced growth of second-phase inclusions and impurity pump mechanisms
Samsonidse G. G., Orlov A. N., Trushin Yu. V.
The concentrations of point defects and complexes increase with increasing bombardment time, while the inclusion radius increases in accordance with over time interval.
Sov. Tech. Phys. Lett., vol. 28(12), 1983, pp. 1455-1458
Radiation swelling in structural alloys
Orlov A. N., Parshin A. M., Trushin Yu. V.
A microscopic model is proposed wich describes accelerated recombination of unlike defects during radiation swelling of supersaturated solid solutions.
Proc of Int. Conf. "Energy Pulse Modification of Semiconductors and
realted materials", 25-28/IX-84, Dresden, 1984, pp. 635-639
A theoretical model of the influence of irradiation on the kinetics of the defect structure of amorphous materials
Orlov A. N., Pompe W., Trushin Yu. V.
The formation of the structure of films that are produced by ion deposition occurs during the process itself under given rate and temperature as well as during the subsequent thermal treatment. The growing precipitates act by their international stresses upon the defects.This effect may be described by the corresponding drift terms in the diffusion equations.
Sov. Tech. Phys. Lett., vol. 11(4), 1985, pp. 162-163
Distribution of point defects in the stress field near inclusion of a second phase
Yu. V. Trushin, Pompe W.
Using the resulting expressions for the spatial distributions of the defects, we can not only trace the changes in the concentrations of interstitials and vacancies near inclusions but also derive aquations for the rates at wich the second-phase inclusions themselves evolve.
Radiation Effects, 1986, vol. 97, pp. 45-66
Theory of precipitate growth under irradiation
A. N. Orlov, G. G. Samsonidze and Yu. V. Trushin
The kinetics of irradiation-enhanced growth of precipitates in solid solutions is investigated under conditions where the mass transfer is effected by mobile impurity-vacancy or impurity-interstitial complexes and the characteristic time t1 of solution depletion is much larger than the time t0 of establishment of quasi-stationary concentrations of intrinsic point defects. Under these conditions the system of four balance equations governing the concentrations of vacancies (Cv), interstitials (Ci), impurity atoms (Cl) and complexes (Cjl) (j = v,i)) splits into a system of two equations governing Cv, Ci and another system of two equations governing Cl and Cjl. These systems are solved in the case of volume-averaged concentrations as well as by taking account of their inhomogeneous distributions. In the latter case the radius Ri, of a spherical precipitate grows as Ri(t)= {const[l -exp(-t/t1)]}1/2, where t = t - t0 and t1 ~ g-1/2, g being the generation rate of Frenkel pairs. The temperature dependence of the growth rate is described by formula (102).
Sov. Tech. Phys. Lett., vol. 31(7), 1986, pp. 768-772
Influence of the elastic field of spherical sinks on the rate of precipitation of point defects under irradiation
A. N. Orlov, G. G. Samsonidze, Yu. V. Trushin
Analytical methods of estimating radiation swelling are considered and a general technique is developed for solving all the necessary equations. Several methods (in addition to decreasing the total number of voids) are suggested for decreasing the swelling.
Sov. Phys. Tech. Phys., vol. 32(2), 1987, pp. 136-138
Distribution of intrinsic point defects around a spherical second-phase inclusion under irradiation.
Trushin Yu.V.
Sov. Phys. Tech. Phys., vol. 33(1), 1988, pp. 24-29
Influence of precipitates on the efficiency of absorption of point defects by edge dislocations
G. G. Samsonidze and Yu. V. Trushin
A study is made of the influence of the elastic fields of spherically symmetric precipitation nuclei on the concentration profiles and steady-state diffusion fluxes of intrinsic point defects in the elastic field on an edge dislocation. Relatively simple analytical expressions are obtained for the efficiency of absorption of vacancies and interstitial atoms by an edge dislocation. It is predicted that the fields of the precipitation nuclei should tend to screen the fluxes of interstitial atoms toward the dislocation.
In book: Radiation defects in metals, Alma-Ata, publ. Nauka, pp. 84-90, 1988
Solid solutions dissociation and radiation swelling
(in russian)
A. N. Orlov, Yu. V. Trushin
Doctor of Ph.-Mat. sci. degree thesises abstract, Moscow 1989
Theory of radiation processes in solid solution of substitution at various stages of dissociation
(in russian)
Yu. V. Trushin
In "Computer modelling of defects in metals", L., Nauka, pp.
119-145, 1990
Microscopic mechanisms of structure volution in decomposing under irradiation solid solutions.
(in russian)
Yu. V. Trushin
Proc. of 3rd
Int. Conf. Energy Pulse and Particle Beam
Modification of Materials (EPM-84), 4-8 Sept 1989, Dresden, Academi Verlag,
Berlin, 1990, pp. 552-554
Decomposition of Solid Solutions under ion Irradiation
Yu. V. Trushin
Irradiation of solid solutions by fast ions is able to stimulate their decomposition with falling out a secondary phase as precipitete. As shown by the experiments on various composites, as well as the theoretical calculations, the radiation-induced decomposition can be a physical process that favours the decrease in theradiation damage of solid solutions, and in particular in the radiation swelling.
Sov. Phys. Tech. Phys., vol. 36(1), 1991, pp. 42-45
Estimate of steady-state radiation swelling for a two-phase material
Yu. V. Trushin
The rate of radiation swelling is estimated for a material with various types of sinks by considering the steady-state fluxes of point defects. Retardation of the rate of radiation swelling by precipitate formation is considered.
J. Nucl. Materials, vol. 185, 1991, pp. 268-272
Point-defect flow and radiation swelling in a biphase material
Yu. V. Trushin
The rate of radiation swelling for a material with various types of sinks is evaluated with allowance for the stationary point-defect flow. The precipitates are considered to provoke a loss in the radiation swelling rate.
Sov. Tech. Phys. Lett., vol. 17(3), 1991, pp. 175-177
Decomposition of irradiated solutions and radiation swelling
Yu. V. Trushin
Irradiation of solid solutions by fast ions can induce decomposition with precipitation of a secondary phase. We will illustrate this point for a binary solid solution irradiated by hard radiation. The precipitates of the secondary phase that form during the decomposition pass through two main stages: coherent pre-precipitation followed by precipitation. The first stage is of the greatest interest from the standpoint of reducing the radiation swelling.
The Physics of Metals and Metallography, vol. 73(4), 1992, pp. 362-372
Exhaustion of Irradiated Solid Solutions
Trushin Yu. V.
Sov. Tech. Phys. Lett., vol. 14(8), 1988, pp. 595-596
Small interstitial clusters as recombination centers for unlike defects during irradiation in decomposing solid solutions
A. N. Orlov, Yu. V. Trushin
The recombination of unlike radiation-induced defects is an important process in the evolution of the defect structure of crystals during bombardment by fast particles. Experimental data1-4 show that recombination in solid solutions accelerates if the latter contain coherent preprecipitates of a second phase. Descriptions of the kinetics of radiation-induced defects by means of balance equations for vacancies (v) and interstitial atoms (i) are usually restricted to consideration of mutual recombination, v +i =0, and the escape of vacancies and interstitial atoms to sinks: dislocations, grain boundaries, phase boundaries. Analysis of the experimental data on the basis of such models forces one to assume that in addition to these sinks there are also certain "hidden" sinks which influence the recombination rate. Such sinks might be shallow interstitial clusters of subcritical size. No theory has incorporated the role played by such clusters.
Sov. Tech. Phys. Lett., vol. 15(1), 1989, pp. 73-74
The possibility of oscillations in the average defect concentration during irradiation
M. Militzer and Yu. V. Trushin
Recent years have seen detailed research on the kinetics of the ge-neration of point defects and the formation of clusters during irra-diation. The system of balance equations for the average con-centrations (Cj of point defects of species j (j = i for interstitial atoms, j = v for vacancies, and j = a for impurity atoms) and of small clus-ters (j = 2i, ai, etc.) is the following system of nonlinear ordinary differential equations.
Sov. Phys. Tech. Phys., vol. 34(12), 1989, pp. 1374-1376
Estimation of impurity concentration upon nucleation of second-phase precipitates
M. Militzer and Yu. V. Trushin
Analytical estimates are obtained for the boundary concentrations for cases of homogeneous and selective nucleation of second-phase precipitates.
Sov. Tech. Phys. Lett., vol. 16(9), 1990, pp. 676-678
Capacity of structural imperfections in crystals to absorb point defects
Yu. V. Trushin, A. L. Suvorov, D. E. Dolin, Yu. N. Eldyshev
The performance and parameters of materials that are used under conditions of intense irradiation are determined by the interaction of radiation-induced point defects both with structural imperfections of these materials and with the specific defect structure formed under irradiation. The most fundamental characteristics of these interactions are the adsorption capacities of the structural imperfections. They are quite difficult to determine, and until recently this problem was solved by indirect analysis of the experimental data on radiation-induced swelling of constructional materials. However this method for obtaining physical data on the absorption of point defects by sinks (dislocations, pores, precipitates, etc.) is incorrect, because it is based on model concepts about the physical nature of the changes occurring in the macroscopic properties studied.
Sov. Tech. Phys. Lett., vol. 17(3), 1991, pp. 177-178
Small interstitial clusters as recombination centers in decomposing irradiated solid solutions
Yu. V. Trushin
Radiation swelling is known experimentally to be suppressed in materials that decompose rapidly and uniformly. In our model explaining this effect, the reduced swelling is attributed to enhanced recombination of unlike defects in these materials. For this to occur, one must have additional recombination centers such as, for instance, dislocation dipoles 8 in deformed materials, or serniinterstitials and semivacancies at incoherent boundaries.
Sov. Phys. Tech. Phys., vol. 36(10), 1992, pp. 1126-1129
Determination of the energy parameters of interstitial atoms and their complexes in metals
M. I. Guseva, D. E. Dolin, E. S. lonova, A. L. Suvorov, Yu. V. Trushin
An analysis is made of the feasibility of doing field-ion microscopic studies of the stabilization (trapping) of interstitial atoms by impurity element atoms and of determining the temperature and energy para-meters of this process, the stability of complexes of interstitial atoms with impurity atoms, and their mobility. An experimental procedure is developed for such studies. A theoretical method for analyzing the experimental results, which allows one to calculate the migration energies and the binding energies of complexes of interstitial atoms and impurities, is described. Methods for treating the evaporating action of the electric field in such experiments, adsorption of gas pa-rticles, thermal-field molding of the sample surface, and possible fe-atures of the field-ion microscopic contrast created by the impurity atoms are studied and developed. Possible effects of sinks within the investigated volume of the sample on the quantitative results of the measurements are discussed. A philosophy of such investigations is elaborated, and their practical applications and significance are discussed.
Sov. Phys. Tech. Phys., vol. 37(2), 1992, pp. 166-169
Clusters of radiation point defects with different mobilities
Yu. V. Trushin, Yu. V. Ugarov
We propose a model for the evolution of clusters of radiation point defects with different mobilities in irradiated crystals. As an example, we apply the model to the case of alkali halide crystals. In so doing, we calculate the time dependence of the defect densities and defect cluster radii. The calculated results are compared to experimental data.
Materials Science Forum, vol. 97/99, 1992, pp. 217-222
A new method to study the interaction of irradiation induced point defects with structural sinks in metals
A. L. Suvorov, Yu. V. Trushin, D. E. Dolin, Yu. N. Yeldishev
A direct method of measuring of absorption rate and efficiency of point defects capturing by various structural sinks is proposed. Irradiated needle-shaped specimens are isochronaly annealed in field ion microscope. During anneal a persistent calculation of point defects number N(t), appearing on the specimen surface is carried out. Presence of structural sinks in the specimen volume, results in reducing N(t). This makes possible to estimate quantitatively the absorption properties (sinks strength, rate and efficiency of point defects absorption) of sinks of various nature.
Tech. Phys. Lett., vol. 23, no. 4, pp. 326-328, 1997
Physical model of the influence of oversize impurities on the radiation hardening of iron a-alloys
V. V. Rybin, Yu. V. Trushin
A physical model is proposed for the influence of oversize impurities on the characteristics of radiation-defect formation in neutron-irradiated iron alloys at low and high irradiation temperatures. A comparison is made between the theoretical expressions obtained for radiation hardening at different temperatures and the existing experimental data. For low temperatures, the agreement was satisfactory, so we can estimate one of the microscopic parameters of impurity atoms the relative size of the region of influence of the impurity atoms. For high irradiation temperatures, the behavior of the radiation hardening of an alloy with oversize impurities is predicted as a funcdon of impurity size.
Technical Physics Letters, Vol. 26. No. 10. 2000. pp.
876-878.
Special Features of the Effect of Oversized Impurities on the Cascade Development in a-Iron Alloys Containing Special Carbides
V.V. Rybin, Yu.V. Trushin, F.Yu. Fedorov, and V.S. Kharlamov
We consider the behavior of an a -iron alloy containing special molybdenum and tungsten carbides (MoC and WC) and oversized impurity atoms (Mo and W) in the solid solution. The effects of molybdenum and tungsten on the development of ballistic (cascade) processes in the alloy under reactor irradiation conditions have been studied by computer simulation methods to assess the possibility of substituting W for Mo in the alloy to obtain low-activated steels.
Sixth International Workshop on New Approaches to High-Tech:
Nondestructive Testing and Computer
Simulations in Science and Engineering, St. Petersburg, 2002, Preprints and program,
Proceedings of SPAS, vol. 6, D2
Computer simulation of the createion of
31P doped layer in
28Si/30Si/28
Si heterostructure by neutron transmutation doping
Yu.V. Trushin, G.V. Mikhailov, E.E. Zhurkin, V.S. Kharlamov, A.A. Schmidt, F.A. Krusenstern
Tech. Phys., vol. 41(3), 1996, pp. 261-267
Computer simulation of the changes in the composition of complex and multilayer structures during ion sputtering
B. Ya. Ber, E. E. Zhurkin, A. V. Merkulov, Yu. V. Trushin, V. S. Kharlarnov
A method is developed for computer simulation of the ballistic stage of ion sputtering. With this method it is possible to describe the dynamic variation of the composition of a layered material as the result of spatial overlap of cascades at high bombardment doses. The method is modified from the algorithms of existing dynamical programs. In particular, this method takes account of how the volumes of the point defects that arc formed and the volumes of the implanted ions affect the change in the parameters of the material during the bombardment. Test calculations are carried out for ion etching of targets of homogeneous GaAs and GaAs with a d -layer of silicon. The results of the calculations arc in qualitative agreement with the data from secondary-ion mass spectroscopy of profiled GaAs samples d-doped with silicon.
J. Nucl. Materials, vol. 233/237, 1996, pp. 991-995
Computer simulation of the sputtering of polyatomic multilayered materials with consideration of the spatial overlapping of the collision cascades
Yu. V. Trushin, B. J. Ber, V. S. Kharlarnov, E. E. Zhurkin
The special dynamic computer code DYTRIRS for the simulation of the sputtering and modification phenomena in multilayered compound materials under high-fluence ion irradiation was developed on the basis of the Monte Carlo computer code TRIRS for the collision cascade calculation. In the computer simulation technique, the spatial overlap of ion-induced atomic collision cascades in a modified material are taken into account. This simulation technique was tried out on the specially grown multilayered structures. The results of the simulation of the sputtering phenomena of the Fe and Cu targets protected by carbon layer under high fluence ion irradiation are demonstrated.
Nucl. Instr. and Meth. B, vol. 127/128, 1997, pp. 286-290
Computer simulation of ion sputtering of polyatomic multilayered targets
B. J. Ber, V. S. Kharlamov, Yu. A. Kudrjavtsev, A. V. Merkulov, Yu. V. Trushin, E. E. Zhurkin
The novel binary collision approximation Monte Carlo (BCA-MC) computer codes TRIRS and DYTRIRS for simulating ion sputtering of polyatomic nonuniform amorphous targets are presented. TRIRS simulates the collision cascade in a target and related secondary processes, including sputtering, damage generation etc., being more realistic than similar MC-BCA codes in modeling low-energy interatomic collisions. These improvements ensure better simulation of low-energy atomic collision processes in nonuniform targets, like sputtering, and ultra-low energy ion implantation. DYTRIRS is the extension of TRIRS that simulates the dynamics of the ballistic stage of ion-induced modification and sputtering for a target under high fluence ion irradiation. The efficiency of DYTRIRS is verified by comparing of the simulation of sputtering and secondary-ion mass-spectrometry in-depth compositional profiling of molecular-beam epitaxy grown two-dimensional (Al,Ga)As-GaAs (001) heterostructures, including structures with silicon and aluminum marker layers.
Inorganic Materials., vol. 34(10), 1998, pp. 1042-1048
Dynamic simulation of radiation-induced defect formation in multicomponent layered materials in the cascade stage
B. J. Ber, E. E. Zhurkin, Yu. A. Kudrjavtsev, Yu. V. Trushin, V. S. Kharlamov,
A physical model is proposed for ballistic processes under high-fluence ion bombardment, with allowance made for sputtering, ion-bean mixing, and accumulation of radiation-induced defects. Simulated sputtering depth profiles of irradiated AI/GaAs heterostructures are compared with experimental data.
Proc. of SPIE, vol. 3687, 1999, pp. 274-277
Displacement threshold energies of impurity atoms in GaAs heterostructures
Boris J. Ber, Yuri A. Kudrjavtsev, Vladimir S. Kharlamov, Yuri V. Trushin, Evgeni E. Zhurkin
The new approach for the determination of displacement threshold energies (Ed ) of impurity atoms in mutlicomponent target has been proposed. The approach combines an experimental SIMS-profiling technique and a computer simulation by a dynamic DYTRIRS code. The developed approach was applied for the determination of Ed the for Al and In impurity atoms in GaAs targets.
Proc.of SPIE v.4348 (2001) pp.275- 281.
Estimation of the displacement threshold energies in Si and GaAs by means of the sputtering of structures with thin marker layers
V.S. Kharlamov, B.J.Ber, Yu.V. Trushin, E.E. Zhurkin, A.P. Kovasky A.A. Schmidt
Proc.of the 4th Moscow Int. ITEP School of Physics, Zvenogorod, Moscow,
Feb.5-16, pp.287-291, 2001
Determination of the displacement threshold energies of impurities in semiconductor heterostructures
A.A.Schmidt, Yu.V.Trushin, B.J. Ber, E.E.Zhurkin
Ion sputtering combined with secondary ion mass spectrometry (SIMS) is one of the most common methods used to investigate semiconductor heterostructures. The main difficulty in interpretating SIMS data is that depth profiles so-obtained are different from the real target structure, because of ballistic damage caused by high fluence if radiation. Changes in the target structure are very sensitive to that displacement threshold energy (Ed) of the target components. Displacement threshold energies are obtained experimentally for many monatomic materials, but present methods could not be used to determinate Ed for impurities and heterostructure components. Nevertheless, comparison of computer simulations of ion sputtering with experiment permits the estimate of Ed for different impurities in semiconductors. The DYTRIRS code was used to simulate the sputtering of GaAs with impurity monolayers. Values of the displacement threshold energies for In and Al in GaAs were estimated by combined experimental and simulation methods.
Proc. of SPIE, N4627, pp.177-180,
2002
Computer simulation and SIMS profiling of Zn implantation in A3B5 semiconductors
B.J. Ber, A.P. Kovarsy, A.A. Schmidt, Yu.V. Trushin, E. E. Zhurkin, F.A.Krusenstern
The method for the determination of the impurity displacement threshold energy in semiconductor heterostructures is further developed. New experimental samples for this method are proposed. Important parameters for the samples are defined. Also, simulation of the sputtering of wide impurity depth profiles is carried out. Improved values for the penetration lengths of Zn atoms with different impact energies in GaAs were found.
Abstracts of Nanotechnologies in the area of physics, chemestry and biology,
Fifth ISTC Scientific Advisory Committee Seminar, St Petersburg, Russia, 2002,
p. 101
Combined experimental and computer simulation technique for the restoration of in-depth elemental distributions in SIMS profiling analysis of nanostructures
Yu.V. Trushin, B.Ja. Ber, E.E. Zhurkin, D.V. Kulikov, V.S. Kharlamov and A.A. Schmidt
Energy Pulse and Particlel Beam Modification of Materials Akademie-Verlag,
Berlin, pp. 375-378, 1988
Influence of high energy particles on thin film formation by LPVD Physical Research
W. Pompe, M. Bobeth, Yu. Trushin
In the present work the influence of the special deposition procedure of LPVD on the initial kinetics of film formation is investigated.
J. Phys. D: Appl. Phys., vol. 31, 1998, pp. 2241-2244
Study of ion beam assisted deposition of AI/AIN multilayers by comparison of computer simulation and experiment
X. Wang, V. Kharlamov, A. Kolitsch, M. Posselt, Y. Trushin, W. Moeller
Nanoscale AI/AIN multilayers have been fabricated by ion beam assisted deposition at various nitrogen ion energies, fluxes and ion-to-atom arrival rate ratios. Computer simulations are performed to describe the deposition process and for comparison with the experimental results. At lower ion energies, fluxes and ion-to-atom ratios, the calculated results are in good agreement with the experimental data. Under this condition film formation is dominated by ballistic processes. For higher ion energies, fluxes and ion-to-atom ratios, comparison of the simulations with experiments reveals that, in addition to ballistic processes, diffusional and chemical processes may play a significant role in film formation.
Phys. Stat. Sol. (a), vol. 166, 1998, pp. 91-106
Concentration profiles in laser-deposited Ni/C and W/C multilayers
V. Kharlamov, M. Bobeth, R. Dietsch, A. Gorbunov, R. Krawietz, H. Mai, W. Pompe, A. Sewing, Yu. Trushin
Experimental studies of concentration profiles in Ni/C and W/C multilayers prepared by pulsed laser deposition are compared with ballistic simulations of the deposition process by means of the computer code TRIDYN. One part of the deposited particles processes kinetic energies of about 100 eV and leads to a ballistic mixing of the deposited layers. As a consequence, diffisive interface concentration profiles arise and the concentrations within the individual layers depend on the layer thickness. The concentration profiles can be highly asymmetric between adjacent interfaces as observed e. g. in W/C multilayers. Simulations predict that the interface width for the deposition of W onto C is up to 3. 5 times larger than in the opposite case. Differences between simulation results and HREM, AES, X-ray and XPS studies suggest that the resulting interface concentration are essentially influenced by compound formation as weii as by demixing of components occurring during deposition.
Proc. of SPIE, vol. 3345, 1998, pp. 244-253
Non-Conventional Transition Layer Formation during PLD of nm-Period Multilayers
A. Gorbunov, K. Brand, H. Geisler, J. Noetzel, B. Wehner, A. Tselev, V. Kharlamov, H. Mai, J. Thomas, H. Lichte, W. Pompe, J. Trushin, E.Wieser, H. Worch
During pulsed laser deposition ions with kinetic energies of the order of 100 eV can already cause intermixing of nm-periodical multilayers followed by non-conventional phase formation in the transition layers, hi the present paper experimental studies of concentration profiles in Ni/C, Fe/Al, Co/Cu multilayers prepared by pulsed laser deposition are compared with ballistic simulations of the deposition process. It was found that generally the ballistic simulation provides the right order of magnitude of the real transition layer width. Unusual phase formation in transition layers including supersaturation, amorphization, pseudomorphism, demixing, and interface coarsening are considered to be a result of solid-state processes directed towards minimization of the free energy of the system.
Tech. Phys. Lett., vol. 23(8), 1997, pp. 617-620
High-temperature high-dose implantation of N+
and Al+
ions in 6H-SiC
R. A. Yankov, M. Voelskow, W. Kreissig, D. V. Kulikov, J. Pezoldt, W. Skorupa, Yu. V. Trushin, V. S. Kharlamov, D. N. Tsigankov
A series of experimental and theoretical investigations has been initiated for 6H-SiC samples sequentially implanted with high doses of N+ (65 keV) + N+ (120keV) + Al+ (100keV) + Al+ (160 keV) ions at temperatures between 200 and 800oC. Nytrogen and carbon distribution profiles are measured by ERD and structural defect disributions are measured by Rutherford backscattering with channeling. A comparison between the experimental data and the results of computer simulation yields a physical model to describe the relaxation processes opf the implanted SiC structure, where the entire implanted volume is devided into regions of different deph, having different guiding kinetics mechanisms.
Proc. of SPIE, vol. 3345, 1998, pp. 260-263
Computer simulation RBS/C studies of high dose N+
and Al+
co-implantation in 6H-SiC
V. S. Kharlamov, D. V. Kulikov, Yu. V. Trushin, D. N. Tsigankov, R. A. Yankov, M. Voelskow, W. Skorupa, J. Pezoldt
The (SiC) (AlN) system is being extensively investigated due to the full miscibility of the two constituents, SiC and AlN, their good thermal and lattice matches, and the the possibility of modifying the band gap of the resulting structure over a wide range of 2.9 eV (6H-SiC) to 6.2 eV (2H-AlN). From a practical viewpoint, the solid solutions of SiC and AlN are promising materials for advanced high-temperature electronic and optoelectronic devices. One novel method of producing thin layers of (SiC)(AlN) potentially suitable for microelectronic applications is the use of N and Al co-implantation into 6H-SiC at elevated temperatures followed by annealing, i. e. ion-beam synthesis. Hitherto, to the best of our knowledge, there has been only one report on the formation of buried (SiC)(AlN) layers in 6H-SiC by ion-beam synthesis. This work is an attempt to model the fundamental processes that occur when 6H-SiC is implanted at elevated substrate temperatures with high doses of N+ and Al+ ions to form thin buried layers of (SiC)(AlN) having predetermined composition and dimensions. Results from the calculations have been correlated with those obtained by Rutherford backscattering channelling spectrometry (RBS/C).
Materials Science Forum, vol. 264-268, 1998, pp. 757-760
A computational model of the formation of (SiC)(AlN) by hot, high-dose N+
and Al+
co-implants in 6H-SiC
Yu. V. Trushin, R. A. Yankov, V. S. Kharlamov, D. V. Kulikov, D. N. Tsigankov, U. Kreissig, M. Voelskow, J. Pezoldt, W. Skorupa
This work is an attempt to model the processes that occur when 6H-SiC is implanted at elevated substrate temperatures with high doses of N+ and Al+ ions to form thin buried layers of (SiC)(AlN). The theoretical treatment has involved ballistic calculations of the distribution of the above species and the resulting ion-induced defects by means of computer codes (developed specially for modelling multi-elemental targets) that take into account the effect of cascade overlapping at high ion doses. Results from the computer simulations have been correlated with data obtained by Rutherford backscattering spectrometry/ion channeling (RBS/C) and elastic recoil detection (ERD) techniques, and good agreement has been achieved between theory and experiment. The analysys of the theoretical and experimental findings has enabled five specific regions to be identified in the implanted material which are discus-sed in detail.
Tech. Phys. Lett., vol. 24(1), 1998, pp. 17-19
Theoretical description of Al+
and N+
high-temperature co-implantation in silicon carbide
D. V. Kulikov, Yu. V. Trushin, R. A. Yankov, J. Petzold, W. Skorupa
A theoretical analysis of the evolution of the defect structure in silicon carbide (6H-SiC) implanted with N+ and Al+ ions of various energies. Satisfactory agreement was achieved between the calculated defect distributions and experimental data. The following kinetic parameters of silicon carbide were estimated numerically: the migration energy of interstitial silicon atoms and the recombination parameters of vacancies and interstitial sites in the carbon and silicon subsystems.
Proceedings ot the 1st Moscow International ITEP School of Physics,
Zvenigorod, Feb. 17-26, 1998, p. 249-251
Modeling of defect distributions in silicon carbide irradiated by N+
and Al+
ions with internal stress field taken into consideration
(in russian)
P.V. Rybin, D.V. Kulikov, Yu.V. Trushin
Tech. Phys., vol. 44(10), 1999, pp. 1168-1174
Physical model for the evolution of the defect system of silicon carbide with allowance for the internal elastic stress fields during implantation of Al+
and N+
and subsequent annealing
D. V. Kulikov, Yu. V. Trushin, P. V. Rybin, V. S. Kharlamov
A theoretical analysis is offered for the formation and development of defects in silicon carbide implanted with nitrogen and aluminum ions and annealed. The diffusion of defects, the formation of complexes, and the influence of the internal elastic stress fields produced by the implanted ions and the created complexes on the migration of interstitials are taken into account. The computed distributions of defects agree satisfactory with the experimental data. acertain kinetic parameters of silicon carbide are estimated numerically.
Nucl. Instr. and Meth. B 147, 1999, pp. 279-285
Modelling high-temperature co-implantation of N+
and Al+
ions in silicon carbide: the effect of stress on the implant and damage distributions
P.V. Rybin, D.V. Kulikov, Yu.V. Trushin, R.A. Yankov, G. Ecke, W. Fukarek, W. Skorupa, J. Pezoldt
This work is an initial attempt to model the fundamental processes that occur when SiC is implanted at elevated substrate temperatures Ti (200o-800o) with high doses of N+ and Al+ ions to synthesise buried layers of (SiC)1-x (AlN)x. The theoretical treatment has involved ballistic calculation of the implant and damage profiles by means of computer codes (TRIRS and DYTRIRS) specifically developed for modelling complex, multi-elemental targets. The influence of the mechanical stress induced the by implanted ions has been taken into account by adding a special term to the differential equations describing the evolution of the implant and damage distributions. Results from the simulations have been correlated with data obtained by Rutherford backscattering spectrometry/ion channelling (RBS/C). The theoretical approach described has enabled one to determine the interaction energies of the interstitials with the internal stress field as well as the role of stress on the defect distribution.
Proc. of SPIE, vol. 3687, 1999, pp. 254-257
Theoretical and experimental studies of (AlN)1-x
(SiC)x
layer structures formed by N+
and Al+
co-implantation in 6H-SiC
D.V. Kulikov, J. Pezoldt, P.V. Rybin, W. Skorupa, Yu.V. Trushin, R.A. Yankov
In present work the defect formation and in silicon carbide implanted with N+ and Al+ ions and annealled has been investigated experimentally and theoretically. The model of defect evolution in implanted and annealed silicon carbide has been developed taking into account the influence of internal stress field on interstitials diffusion. The satisfactory agreement of theoretical and experimental results has been obtained. The parameter of interaction of interstitials with stress field has been estimated.
Proc. of SPIE, vol. 4064, 2000, pp. 301-307
Influence of internal strees field due to point defect clusters on interstitial diffusion in SiC under irradiation
P.V. Rybin, D.V. Kulikov, Yu.V. Trushin, J. Petzoldt, R.A. Yankov
The fundamental processes that occur when SiC is implanted at elevated substrate temperatures with high doses of N+ and Al+ ions to synthesise buried layers of (SiC)x (AlN)1-x have been investigated. The influence of the mechanical stress induced by formed clusters of interstitials has been taken into account by adding special term to the expression of current density of defects in the set of differential equations. The satisfactory agreement of simulation results and experimental data is obtained. The theoretical treatment has enabled one to determine the role of internal stress field on the evolution of defect distribution.
Nucl. Instr. & Meth. in Phys. Res. B, vol. 166/167 (1-4), 2000, pp.
758-763
The influence of the implantation sequence on the (SiC)1-x
(AlN)x
formation
J. Pezoldt, P.V. Rybin, D.V. Kulikov, Yu.V. Trushin, R.A. Yankov, M. Voelskow, U. Kreissig
The influence of the implantation sequence on the defect and implant distribution during (SiC)1-x (AlN)x formation was studied by Rutherford backscattering spectrometry/ion channelling (RBS/C) and elastic recoil detection. It is shown that the implantation sequence aluminum followed by nitrogen lead to an improved crystallinity compared to the reverse implantation sequence for implantation temperatures above 400o C. The results obtained are discussed in relation to the defects distributions calculated by using a developed model which includes the effect of stress self-consistently.
Proc. of SPIE, vol. 4348, 2001 pp. 257-263
Al+ and N+ implantation in
silicon carbide: a role of point defect clusters in
defect evolution.
P.V.Rybin, D.V.Kulikov, Yu.V.Trushin, J. Petzoldt
The diffusion processes in silicon carbide under Al+ and N+ ion implantation and subsequent annealing have been investigated. The influence of an internal stress field due to point defect clusters has been taken into account. The clusters of interstitials, ions and impurities have been created during irradiation. The compression stress field due to these complexes has decreased the diffusion of interstitials. The defect profiles have been calculated which have been in good agreement with experimental RBS/C results.
Nucl. Instr. Meth. B, Vol. 178 (2001) pp. 269-274
Theoretical and experimental investigations of defect evolution in silicon carbide during N+ and Al+ ion implantation taking into account internal stress fields
P.V. Rybin, D.V. Kulikov, Yu.V. Trushin, R.A. Yankov, M. Voelskow, F. Scharmann, J.Pezoldt
Proc. of IV Bilateral Soviet-German Seminar on High Temperature
Spuerconductivity, 6-13 october, St. Petersburg, 1991, p. 130
Relaxation of the oxygen subsystems in irradiated high-Tc
single crystals
Yu.V. Trushin, Yu.V. Uganov, A.L. Suvorov, H.W. Weber
Based on the autoionic spectroscopy data on gaseous emission, we have made an attempt to describe kinetics of the time restoring of mean concentration of oxygen in YBaCuO at linear annealing in vacuum.
Phys. Solid State, vol. 36(10), 1994, pp. 1583-1589
Physical model of the oxygen subsystem in YBaCuO during gamma-irradiation
D. V. Kulikov, R. A. Suris, Yu. V. Trushin
A theoretical investigation is made of the influence of processes taking place in the oxygen subsystem of thin YBaCuO films under the influence of gamma irradiation on the value of crytical temperature of superconducting transition and the dependence of the resistivity on the temperature. Estimates of the numerical values are obtained for the following parameters of oxygen subsystem of thin YBaCuO films: the sink strength, the energy of binding of the oxygen to a sink, and the cross section for the formation of an oxygen vacancy by ionization during gamma irradiation.
Supercond. Sci. Technol., vol. 8, 1995, pp. 303-310
A model of oxygen-subsystem defects interaction with intercrystalline boundaries in polycrystalline YBaCuO films under gamma-irradiation
D. V. Kulikov, R. A. Suris, Yu. V. Trushin
The influence of processes occuring in the oxygen subsystem of YBaCuO thin films under gamma-irradiation on the critical temperature and on the temperature dependence of the film resistance has been investigated theoretically. The values of parameters such as sink strength values, the energy barrier for oxygen escape from sinks and cross-section of oxygen-vacancy formation under gamma-irradiation have been estimated.
Tech. Phys. Lett., vol. 22(11), 1996, pp. 920-922
Computersimulation of point magnetic-flux pinningcenters in a neutron-irradiated YBaCuO single crystal
D. V. Kulikov, R. A. Suris, Yu. V. Trushin, V. S. Kharlamov,D. N. Tsigankov
A model is presented for the evolution of point defects generated by neutron irradiation in YBaCuO. The concentrations of point defects generated by the neutron irradiaion are calculated. It is shown that by annealing the irradiated sample at room temperature (in the reactor channel) it is possible to form small clusters of point defects in concentrations sufficient for effective pinning of the magnetic flux. This model can explain the anisotropy in the lowering of the critical current density by annealing of irradiated samles and shows that the critical current in the presence of a magnetic field parallel to ab-plane is proportional to the concentration of pinning defects.
Physica C, vol. 282/287, 1997, pp. 1333-1334
Small defects in YBCO single crystals: Tc after neutron irradiation and annealing
F. M. Sauerzopf, M. Werner, H. W. Weber, R. A. Suris, D. V. Kulikov, V. S. Kharlamov, Yu. V. Trushin
Neutron irradiation of HTCs creates a wide spectrum of defect sizes. In this work, the influence of small defects on the critical temperature is investigated by sequential reactor neutron irradiation and annealing of a YBCO single crystal. Thecharacteristic behaviour of Tc under this treatment is satisfactorily explained by a theoretical model considering the creation, migration and annihilation of small defects in the oxygen sublattice.
Proc. of SPIE, vol. 3345, 1998, pp. 241-248
Physical model of pinning centers annealing processes in neutron irradiated YBaCuO
Kulikov D. V., Suris R. A., Trushin Yu. V., Kharlamov V. S., Tsigankov D. N.
Neutron irradiation of HTSCs creates a wide spectrum of defect sizes. In this work, the influence of small defects on the critical temperature and critical current density Jc is investigated. The characteristic behaviour of Tc and Jc under this treatment is satisfactorily explained by a theoretical model considering the creation, migration and annihilation of small defects in the oxygen sublattice.
Physica C, v.355 (2001) p.245-250
Changes in the transition temperature after irradiation and annealing in single crystalline YBaCuO
D.V. Kulikov, Yu.V. Trushin, F.M. Sauerzopf, M. Zehetmayer, H.W. Weber
We present a model of the defect dynamics in YBaCuO crystals to understand the changes in the transition temperature after neutron irradiation and subsequent annealing. These changes are closely related to the calculated concentration of vacancies in the Cu-O chain sites.
Tech. Phys. Lett., v. 27(4), 2001, pp. 316-318
A physical model of oxygen subsystem evolution in PLZT-ceramics under neutron irradiation and annealing
D.V. Kulikov, D.A. Lesnyh, Yu.V. Trushin, H.W.Weber, K.Humer, R.Bittner, A.R.Sternberg
A physical model describing the evolution of defects in the oxygen subsystem of ferroelectric PLZT ceramics under neutron irradiation and isochronous annealing conditions is proposed. The model takes into account the dependence of the material properties on the lanthanum content. The oxygen vacancy concentration variations calculated using this model agree with the experimental data on the polarization behavior in annealing ceramics.
Proc.of SPIE v.4348, 2001, pp.264-269
Computer simulation of ferroelectric property changes in PLZT ceramics under neutron irradiation.
D.V. Kulikov, Yu.V. Trushin, V.S. Kharlamov, R.Bittner, K.Humer, H.W. Weber, A.R. Sternberg, D.A. Lesnyh, A.A. Schmidt
The response of ferroelectric materials to high energy irradiation is of great interest because of their possible application in radiation environments such as thermonuclear reactors. In the present work a physical model for the defect evolution in PLZT ceramics under neutron irradiation and annealing is proposed. The influence of the defect system on the ferroelectric properties of these materials has been investigated. Satisfactory agreement between the theoretically estimated oxygen defect concentration after irradiation and annealing and the experimentally determined polarization has been obtained.
Integrated Ferroelectrics v.37, 2001, p.275
Dielectric properties of reactor irradiated ferroelectric thin films.
R. Bittner, K. Humer, H.W. Weber, M. Tyunina, L. Cakare, A. Sternberg, D.V. Kulikov, Y.V. Trushin
Proc. of SPIE, v.4627, 2002, pp.170-176
Computational study of the influence of oxygen vacancies on the polarization in irradiated and annealed PLZT ceramics
D. A. Lesnyh, D. V. Kulikov, Yu.V. Trushin, R. Bittner, K. Humer, H.W. Weber, A.R. Sternberg
A physical model for the oxygen defect evolution in PLZT ceramics under neutron irradiation and annealing is proposed. The influence of the defect system on the polarization of these materials has been investigated. The influence of the La content on the material structure and the oxygen defects has been taken into account. Satisfactory agreement between the theoretically estimated oxygen defect concentration after irradiation and annealing and the experimentally determined polarization has been obtained.
Tech. Phys. Lett., v.28, No.8, 2002, pp. 628-630
The effect of neutron irradiation on the Curie-Weiss
temperature of an antiferroelectric lead-zirconate film
D.V Kulikov, D.A.Lesnyh, Yu.V. Trushin, H.W. Weber, K.Humer, R.Bittner, A.R.Sternberg
Integrated Ferroelectrics v.47, 2002, p.143
Dielectric properties of irradiated ferroelectric and antiferroelectric thin films
R. Bittner, K. Humer, H.W. Weber, L. Cakare, A. Sternberg, D.V. Kulikov, Y.V. Trushin
Proc. of SPIE, N5122, 2003, pp.341-347
Irradiation effects in lead zirconate thin films
A.R. Sternberg, A. Krumins, K. Kundzins, V. Zauls, I. Aulika, L. Cakare, R. Bittner, H. Weber, K. Humer, D. Lesnyh, D. Kulikov, Y. Trushin
Proc. of SPIE, v.5127, 2003, pp.136-139
Chnages in the temperature dependence of the dielectric constant in irradiated antiferroelectric thin films
D.A. Lesnyh, D.V. Kulikov, Yu.V. Trushin, R. Bittner, K. Humer, H. Weber, A. Sternberg
A model describing the changes of the Curie-Wiss temperature in lead-zirconate thin films under neutron irradiation is proposed. The Curie-Weiss temperature in the irradiated material decreases proportionally to the square of the neutron fluence. This decrease is connected to charges caused by neutron irradiation, which are equally distributed over the film. Satisfactory agreement between theoretical results and experimental data is obtained for different neutron fluences.
Journal of the European Ceramic Society, v.24, Issue 6, pp. 1653-1657, 2004
Antiferroelectric PbZrO3 thin films: structure, properties and irradiation effects
A. Sternberg, K. Kundzins, V. Zauls, I. Aulika, L. Cakare, R. Bittner, H. Weber, K. Humer, D. Lesnyh, D. Kulikov, Y. Trushin
Proc. of the 4th Moscow Int. ITEP School of Physics, Zvenigorod, Moscow,
Feb.5-16, pp.299-303, 2001
Growth of SiC nanoclusters on Si surface using Molecular beam epitaxy
D.V. Kulikov, K.L. Safonov, Yu.V. Trushin, J. Pezoldt
The growth of SiC clusters on a Si(111) surface has been investigated theoretically. The formation and growth of SiC clusters on a Si surface stimulated by the deposition of elemental carbon onto Si(111) using molecular beam expitaxy, have been studied by applying the kinetic equation method. The simulated cluster size distribution function obtained within this method appeared to be in reasonable agreement with experimental data.
Proc. of SPIE, v.4627, 2002, pp.165-169
Nucleation of SiC on Si and their relationship to nano-dot formation: II. Theoretical investigation
K.L. Safonov, D.V. Kulikov Yu.V. Trushin, Joerg Pezoldt
The processes of SiC clusters growth on Si(111) surface has been investigated theoretically. The SiC cluster formation and growth on Si surface stimulated by deposition of elemental carbon onto Si(111) with molecular beams have been studied by applying the kinetic equations (co-called rate equations) method. The simulated cluster size distribution function obtained within this method appeared to be in reasonable agreement with the experimental data. Obtained cluster capture rates agree with KMC investigations.
Nucl. Instr. and Meth. B, v. 196, 2002, pp. 39-50
The estimation of sputtering yields for SiC and Si
G. Ecke, R. Kosiba, V. Kharlamov, Yu. Trushin, J. Pezoldt
Proc. of SPIE, v.5127, 2003, pp.128-131
Influence of the growth temperature on SiC nanocluster nucleation on Si(111) surface during MBE process
K.L. Safonov, D.V. Kulikov, Yu.V. Trushin, J. Pezoldt
Rate equations approach of computer simulation has been applied to investigate the SiC clusters nucleation and growth on Si surface during molecular beam epitaxy. Cluster surface densities have been obtained for a range of temperatures. The temperature influence on the cluster density, including the surface phase transition (which occurs with simultaneous surface structure reconstruction), has been determined. The results obtained bythe application of the suggested physical model have appeared to be in the reasonable agreement with experimental data.
Mater. Sci. Forum, v.433-436, 2003, pp.591-594
Modelling the formation of nano-sized SiC on Si
K.L. Safonov, A.A. Schmidt, Yu.V. Trushin, D.V. Kulikov, J. Pezoldt
Tech. Phys. Lett., v.29(8), 2003, pp.663-665
The transition from 2D to 3D nanoclusters of silicon carbide on silicon
Yu.V. Trushin, K.L. Safonov, O. Ambacher, J. Pezoldt
Phys. Stat. Sol. (a), v. 201, No. 2, 2004, pp. 333-337
Kinetic Monte Carlo simulation of SiC nucleation on Si (111)
A.A. Schmidt, K.L. Safonov, Yu.V. Trushin, V. Cimalla, O. Ambacher, J. Pezoldt
Proc. of 43rd
International Field Emission Sumposium, Moscow,
Russia, July 14-19, 1996, p. 90
Formation of periodic multi-tip relief of pirolithic graphite by high energy ions irradiation
A.L. Suvorov, A.Yu. Didec, Yu.N. Cheblukov, V.P. Babaev, A.S. Fedorov, M.O. Popov, Yu.N. Trushin, R.A. Suris, V.S. Kharlamov, D.V.Kulicov
Tech. Phys. Lett., v.23(7), 1997, pp. 573-574
Physical model of the formationof a periodic structure on the surface of pyrolitic graphite under high-energy ion bombardment
D. V. Kulikov, R. A. Suris, A. L. Suvorov, Yu. V. Trushin, V. S. Kharlamov
A physical model is presented for the formation of a structure consisting of "micropoints" and "cavities" on the surface of pyrolitic graphite bombarded by 210 MeV Kr+ ions. This structure may be explained in terms of the depth distribution of the energy deposited by the bombardment.
Tech. Phys. Lett., v. 23(7), 1997, pp. 523-524
Physical model of the transition from a hexagonal to a cubic structure during growth of boron nitride under nitrogen and argon ion irradiation.
Trushin Yu.V.
A model based on original experimental data is proposed to describe the transition of the structure from hexagonal to cubic during the growth of boron nitride layers. It is postulated that boron and nitrogen ions entering the growing layer form additional atomic planes parallel to the (ab) planes of the hexagonal structure or complete existing dislocations in the growing crystal, causing the boron nitride to undergo a transition to a cubic structure.
Vacuum, vol. 52, 1999, pp. 407-410
Computer simulation of transition from h-BN to c-BN during ion beam assisted deposition
V. S. Kharlamov, D. V. Kulikov, Yu. V. Trushin
A model is proposed of c-BN growth during the ion Beam assisted deposition procces. This phase appears when N and B atoms in h-BN create inserted ab-planes that increase the density of the material, resulting in transition from h-BN to c-BN. The aim is to simulate the processes that occur in growing BN films that lead to the phase transition. The ballistic processes caused by ion beam have been simulated by means of Monte Carlo computer codes TRIRS and DYTRIRS. With the help of computer code GEAR the annealing of the profiles of bombarding particles (Ar, N, B) have been modelled. The sink strengths of dislocation loops and migration energies of Ar, B and N atoms in BN have been estimated. These loops can act as nuclei of inserted ab-planes consisted of B and N, leading to formation of c-BN. It is shown that, according to our model, the transition from h-BN to c-BN is indeed possible, under certain conditions.
Proc. of SPIE, vol. 3687, 1999, pp. 290-291
Physical model of copper clusters formation in hydrogenated amorphous carbon grown by ion co-sputtering of graphite and copper
D.V. Kulikov, Yu.V. Trushin, V.S. Kharlamov
The size distribution function of copper clusters formed in growing DLC films has been obtained by computer simulation. The reasonable agreement of theoretical and experimental results has been achieved. The value of surface activation migration energy of copper has been estimated.
Techn. Phys. Lett., vol. 25(3), 1999, pp. 198-199.
Size distribution of copper nanoclusters in amorphous carbon.
Kulikov D.V., Trushin Yu.V., Kharlamov V.S., Ivanov-Omski V.I.
A theoretical analysis is made of the formation of copper nanoclusters in a growing amorphous carbon film. The calculated size distributions of the copper clusters are compared with the experimental data. A numerical estimate is made of various kinetic parameters of copper in amorphous carbon
Proc of SPIE, vol. 4064, 2000, pp. 288-294
Copper cluster formation and evolution in amorphous materials grown by co-sputtering of copper with SiO2
Dmitry V. Kulikov, Yurii V. Trushin, Sergey A. Gurevich, Vasiliy A. Zabelin
The process of copper nanoclusters evolution in amorphous films, formed by co-sputtering of Cu and SiO2, has been investigated theoretically. Bulk copper diffusion during sample annealing after fabrication have been described by kinetic equation set and cluster size distribution function have been obtained. The reasonable agreement of theoretical and experimental results has been achieved. The values of bulk copper activation migration energy have been estimated. For investigating clusters formation with different copper content method of molecular dynamics have been developed. Both methods have reasonable agreement for low time diffusion.
Nucl. Instr. and Meth. B, v.193, 2002, pp.538-543
Atomic scale modelling of nanosize Ni3Al cluster beam deposition on Al, Ni and Ni3Al (111) surfaces
V.S. Kharlamov, E.E. Zhurkin, M. Hou
Phys. Rev. B, v.66, 2002, 195408
Atomic-scale modelling of cluster-assembled NixAl1-x thin films
M. Hou, V.S. Kharlamov, E.E. Zhurkin
Proc. of SPIE, v.5127, 2003, pp.124-127
Computer simulation of the creation of 31P doped layer in 28Si/30Si/28Si heterostructure by neutron transmutation doping
Yu.V. Trushin, G.V. Mikhailov, E.E. Zhurkin, V.S. Kharlamov, A.A. Schmidt, F.A. Krusenstern