A. A. Bogdanov, 2013 Laureate of competition of business ideas,
scientific and technical developments and research projects under the motto
"Young. Cheeky. Perspective". For work: "Development of a tunable
metamaterial based on a semiconductor superlattice for the control of
R. A. Suris, 2008 A. F. Ioffe Prize by Government of St. Petersburg and
St. Petersburg Scientific Center of the Russian Academy of Sciences for the
series of works "Theoretical study of low-dimensional surface phenomena in
R. A. Suris, M. P. Petrov, V. V. Bryskin, 2006 A. F. Ioffe Prize by Ioffe
Institute of the Russian Academy of Sciences for
the series of works "Waves of charge exchange in semiconductors".
R. A. Suris, 2005 A. F. Ioffe Prize by Ioffe Institute of the Russian
Academy of Sciences for a series of works "Investigation of semiconductor
superlattices based on quantum wells and quantum dots".
I. A. Dmitriev, 2004 AIXTRON Young Scientist Award at 12 International
Symposium “Nanostructures: Physics and Technology”.
I. A. Dmitriev, R. A. Suris, 2003 Prize for the best series of works of
the International Academic Publishing Company “Nauka”.
I. A. Dmitriev, 2003 INTEL Young Scientist Award at VI National Russian
Conference on Semiconductor Physics.
I. A. Dmitriev, 2002 Best Research Award at Workshop “Frontiers in
Electronics” WOFE-02, St. Croix (2002).
Zh. I. Alferov, L. V. Asryan, D. Bimberg, P. S. Kop'ev, N. N. Ledentsov,
V. A. Shchukin, R. A. Suris, and V. M. Ustinov. Highest
Award (State Prize) of the Russian Federation in Science and Technology for
the year 2001 with the citation: “For fundamental investigations of
heterostructures with quantum dots and development of quantum dot lasers”.
M. V. Maximov, L. V. Asryan, Yu. M. Shernyakov, A. F. Tsatsul'nikov, I.
N. Kaiander, V. V. Nikolaev, A. R. Kovsh, S. S. Mikhrin, V. M. Ustinov,
A. E. Zhukov, Zh. I. Alferov, N. N. Ledentsov, and D. Bimberg. First Best Paper Award of the IEEE Journal of Quantum
Electronics for the paper “Gain and threshold characteristics of long wavelength lasers based
on InAs/GaAs quantum dots formed by activated alloy phase separation”,
IEEE J. Quantum Electron., vol. 37, no. 5, pp. 676-683, May 2001.
I. A. Dmitriev, 2001 Ioffe Institute Prize for Junior Scientists for the Best Research.
I. A. Dmitriev, 1999 Prize for the Best Research at the Russian National
Conference on Physics of Semiconductors and Semiconductor Opto- and
Nanoelectronics for Junior Scientists.