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4th International Symposium
on Growth of III-Nitrides
The symposium is organized by the Ioffe Physical-Technical Institute of Russian Academy of Sciences.
It is a fourth symposium in a biannual series focusing specifically on growth of III-Nitride materials,
nanostructures and device structures started in 2006 (Linköping, Sweden), continued in 2008 (Izu, Japan)
and 2010 (Montpellier, France).
Symposium topics
- Bulk growth: AlN, GaN, InN
- Epitaxial growth techniques
- Ternary and quaternary alloys
- III-N nanostructures
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- Defect control and surface effects
- Optical and electrical properties
- III-N DMS and spin-related phenomena
- Devices: FETs, LEDs, and lasers
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Official partners
Sponsors
Related events
9th International Symposium on Semiconductor Light Emitting Devices
(ISSLED 2012),
July 22 - 27, 2012, Berlin, Germany,
http://issled2012.org International Workshop on Nitride Semiconductors (IWN2012),
October 14-19, 2012, Sapporo, Japan,
http://iwn2012.jp
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