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4th International Symposium
on Growth of III-Nitrides

The symposium is organized by the Ioffe Physical-Technical Institute of Russian Academy of Sciences. It is a fourth symposium in a biannual series focusing specifically on growth of III-Nitride materials, nanostructures and device structures started in 2006 (Linköping, Sweden), continued in 2008 (Izu, Japan) and 2010 (Montpellier, France).

Symposium topics

  • Bulk growth: AlN, GaN, InN
  • Epitaxial growth techniques
  • Ternary and quaternary alloys
  • III-N nanostructures
  • Defect control and surface effects
  • Optical and electrical properties
  • III-N DMS and spin-related phenomena
  • Devices: FETs, LEDs, and lasers

Official partners


Related events

  • 9th International Symposium on Semiconductor Light Emitting Devices (ISSLED 2012),
    July 22 - 27, 2012, Berlin, Germany,

  • International Workshop on Nitride Semiconductors (IWN2012),
    October 14-19, 2012, Sapporo, Japan,