Dr. Olga Chikalova-Luzina

Ph.D. in Physics and Mathematics,
Senior Researcher

• Dangling bond saturation at Si-gas phase interfaces
  It was recently demonstrated that incorporation of deuterium (D), rather than hydrogen (H), at Si/SiO₂ interface leads to significant improvement in the MOS transistor lifetime. After the discovery, a number of works were devoted to the theoretical study of the isotope effect in the dangling bond saturation on Si surface and at Si/SiO₂ interface as well as in D(H) adatom desorption, however, the effect is still not quantitatively understood , and the problem is of a current interest. We study theoretically the isotope effect in the saturation of dangling bonds at Si-D(H) gas and Si-D₂(H₂) gas interfaces. Our calculations show the significant isotope effect at the Si-D(H) monatomic gas interfaces implying enhancement of D adsorption compared to H adsorption. At the Si-D₂(H₂) molecular gas interfaces, the effect is small as opposed to the previous results obtained by using a simplified model of adatom dynamical behavior.
  

• Thermodynamic analysis of phase equilibria in molecular beam epitaxy of dopant compounds
  Thermodynamic approach was earlier applied to the description MBE of GaAs and AlGaAs doped with Be or Sn. It was shown that the thermodynamic consideration provides a very useful guide for controllable change of growth parameters to obtain high quality epitaxial structures with abrupt composition and doping profiles and perfect surface morphology. The aim of our study is to extend this approach to the analyses of MBE growth of other doped semiconductor compounds.

1. O.P.Chikalova-Luzina and T.Matsumoto, Ratio of deuterium to hydrogen termination on silicon in aqueous electrolyte solutions. . Appl. Phys. Lett., 80, 4507, 2002
2. O.P.Chikalova-Luzina and T.Matsumoto, Isotope effect in the adsorption of H and D on Si(111) surface from electrolytes. Vacuum, 67, 27, 2002
3. O.P.Chikalova-Luzina and T.Matsumoto, Adsorption ratio of deuterium and hydrogen on silicon in gas and liquid phases. Book of Abstract of International Symposium on Nano and Giga Challenges in Microelectronics, р.9, Moscow, September 2002
4. O.P.Chikalova-Luzina and T.Matsumoto, Isotope effect in the adsorption of H and D on the Si crystal surface from electrolytes. Book of Abstracts of 20th European Conference on Surface Science, p.95. Krakow, Poland, September 4-7, 2001
5. O.P.Chikalova-Luzina and T.Matsumoto, Isotope effect in the passivation of Si crystal surface by hydrogen or deuterium from electrolyte solutions. Book of Abstracts of II International Seminar on Semiconductur Surface Passivation, p.61. Ustron, Poland, September 10-13, 2001
6. I.P.Ipatova, O.P.Chikalova-Luzina and K.Hess, Anharmonic linewidth of absorption by localized vibrations of H and D adatoms on the surface of Si. Superlattices and Microstructures 27, p.437, 2000
7. I.P.Ipatova, O.P.Chikalova-Luzina and K.Hess, Anharmonic lifetime of H and D on the Si surface. Proceedings of 8th International Symposium on Nanostructures: Physics and Technology, p.283, St.Petrsburg, Russia, June 19-23, 2000

• Surface lattice dynamics of semiconductor crystals [1,2]
• Computer simulation of semiconductor growth [3,4]
• Physical processes in semiconductor detectors of nuclear radiations [5-7]
• Computer simulation of physical processes in A₃B₅ photocathodes [8,9]

References (most important)

1. I.P.Ipatova, O.P.Chikalova-Luzina and K.Hess, Isotope effect in the equilibrium between the silicon surface and the gas phase of hydrogen and deuterium. Phys. Stat. Sol. 222, pp.287- 289, 1999
2. I.P.Ipatova, A.A.Maradudin, O.P.Chikalova-Lusina. The effect of boron localized vibrations on the equilibrium distribution of boron between the surface and bulk of the silicon crystal. Solid State Communications 104, 277-280, 1997
3. Yu.V. Zhilaev, I.P. Ipatova, A.Yu. Kulikov, Yu.N. Makarov, O.P. Chikalova-Luzina. Ultraviolet-absorption analysis of the composition of the gas phase in the growth of GaAs in a chloride gas-transport system. Zh. Tekh. Fiz. 60(7), 143-150, 1990. - English translation: Sov. Phys. - Tech. Phys. 35(7), 836-840, 1990
4. I.P. Ipatova, O.P. Chikalova-Lusina, Yu.N. Makarov. Mathematical simulation of chemical reaction rate constants in CVD growth of GaAs. Phys. Low-Dim. Struct. 9/10, 55-62, 1996
5. V.V. Voronkov, G.I. Voronkova, S.G. Danengirsh, B.V. Zubov, V.P.Kalinushkin, T.M. Murina, E. Petrova, A.M.Prokhorov, N.B. Strokan, O.P.Chikalova-Luzina. Capture of carriers by impurity clouds in germanium nuclear radiation detectors. Fiz. Tekh. Poluprivodn. 16(10), 1752-1757 (1982). - English translation: Sov. Phys.- Semiconductors 16(10), 1124-1127, 1982
6. V.K. Eremin, N.B. Strokan, O.P.Chikalova. Investigations of impurity clusters in the pure materials using the form of the spectra resulting from annihilation of electron - positron pairs. Fiz. Tekh. Poluprivodn. 18(2), 244-249, 1984. - English translation: Sov. Phys.- Semiconductors 18(2), 151-154, 1984
7. V.K. Eremin, N.B. Strokan, O.P.Chikalova-Luzina. Capture of carriers by local impurity clusters in the electric field of a p-n junction. Fiz. Tekh. Poluprivodn. 19(1), 70-76, 1985. - English translation: Sov. Phys.- Semiconductors 19(1), 42-45, 1985
8. N.I. Tisnek, O.P. Chikalova. Maximum quantum yield of Ga-As based photocathodes. Zh. Tekh. Fiz. 52(5), 975-979, 1982. - English translation: Sov. Phys. - Tech. Phys. 27(5), 622-624, 1982
9. N.I. Tisnek, O.P. Chikalova-Luzina. Simulation of electron transfer in A3B5 photocathodes. Zh. Tekh. Fiz. 51(8), 1695-1700, 1981. - English translation: Sov. Phys. - Tech. Phys. 26(8), 974-977, 1981

Tel.: +7 (812) 247 9397
E-mail: olgachik.ton@pop.ioffe.rssi.ru

Olga Chikalova-Luzina
Laboratory of nonequilibrium processes in semiconductors
Ioffe Institute, Russian Academy of Sciences
Politekhnicheskaya 26,
St.Petersburg, 194021 Russia