Research areas:

• development of semiconductor photoelectric image converters for high-speed infrared photography;
• theory of semiconductor optical properties and theory of physical phenomena in semiconductor technology;
• optical, photoelectric and emission properties of semiconductors in far infrared and submillimeter regions;
• technology of CdTe crystals, development of nuclear radiation detectors and those for X-ray tomography;
• the physical processes in devices based on silicon MIS struc-tures with tunnel transparent dielectric;
• structure and electronic properties of extended defects in semiconductors;
• semiconductor tracking detectors for high luminosity accelerating facilities;
• radiation induced defects in pure silicon, silicon detectors for precise ion spectroscopy;
• solid state investigation under submillimeter irradiation, ESR in solid state ;
• quantum (hopping) transport and the metal-insulator transition in disordered systems and neutron transmutation doping of semiconductors;
• electronic, photoelectronic and optical properties of conducting polymers;
• polymer-nanoparticle composites, polymer-inorganic complexes and organic microelectronics devices based on polymer nanostructures

Head:

Professor Andrei Zabrodskii,

E-mail: andrei.zabrodskii@mail.ioffe.ru
Ioffe Physico-Technical Institute, Russian Academy of Sciences
Politekhnicheskaya 26, St.Petersburg, 194021 Russia
Fax: +7 (812) 297 1017
Phone: +7 (812) 297 2245