Microwave interactions with condensed matter

Anatoly Veinger Head of the group,
Sci.D., Leading Researcher, ResearcherID
Petr Semenikhin Ph.D., Staff Researcher, ResearcherID
Igor Kochman Postgraduate student, ResearcherID

The group's interests focus on understanding the physical processes of the interaction of the microwave with the insulators, semiconductors, semimetals and superconductors. Our goal is to obtain new regularities in these interactions and to explain them on the base of the physical theories. Other goal is to create new techniques for the investigation of the condensed matter with the use of the microwave influence on it.

Current research focus

  • Electron Spin Resonance in the semiconductors in the insulator and metallic state:
    ESR spectra transformation in the vicinity of the insulator - metal phase transition of the semiconductors. Influence of the doping and technology on the ESR spectra of the carbon structures
  • Non-resonance magnetosensitive microwave absorption in the semiconductors and superconductors
    Magnetoresistivity of the compensated semiconductor on microwave frequencies within the phase transition insulator - metal region and in the insulator state. Magnetic field dependent microwave absorption in the superconductors

Our research retrospective

Recent publications

  • A. Zabrodskii, A. Veinger, P. Semenikhin,
    Effect of Compensation on Low-Temperature Spin Ordering in Ge:As Semiconductor Near the Insulator–Metal Phase Transition, Appl. Magn. Reson., 1 (2020)
  • A. Zabrodskii, A. Veinger, P. Semenikhin,
    Anomalous Manifestation of Pauli Paramagnetism and Coulomb Blockade of Spin Exchange upon the Compensation of Doped Semiconductors, phys. status solidi b 257, 1900249 (2019)
  • A.I. Veinger, I.V. Kochman, V. I. Okulov, T. E. Govorkova, M. D. Andriichuk, L. D. Paranchich,
    Specific Features of the Electron Spin Resonance of an Iron Impurity in HgSe Crystals, Semiconductors 53, 298 (2019)
  • A.I. Veinger, I.V. Kochman, D. A. Frolov, V. I. Okulov, T. E. Govorkova, L. D. Paranchich,
    Microwave Magnetic Absorption in HgSe with Co and Ni Impurities, Semiconductors 53, 1375 (2019)
  • A.I. Veinger, I.V. Kochman, V.I. Okulov, M. D. Andriichuk, L. D. Paranchich,
    Conduction-Electron Spin Resonance in HgSe Crystals, Semiconductors 52, 1672 (2018)
  • A.I. Veinger, I.V. Kochman, V.I. Okulov, M. D. Andriichuk, L. D. Paranchich,
    Microwave Magnetoabsorption Oscillations in Fe-Doped HgSe Crystals, Semiconductors 52, 980 (2018)
  • A.A. Komlev, T.L. Makarova, E. Lahderanta, P.V. Semenikhin, A.I. Veinger, I.V. Kochman, G. Magnani, G. Bertoni, D. Pontiroli, M. Ricco,
    Antiferromagnetic transition in graphene functionalized with nitroaniline, J. of Nanophotonics 11, 032512 (2017)
  • A. Hospodkova, E. Hulicius, J. Pangrac, F. Dominec, M.P. Mikhailova, A.I. Veinger, I.V. Kochman,
    InAs/GaSb/AlSb composite quantum well structure preparation with help of reflectance anisotropy spectroscopy, J. Cryst. Growth 464, 206 (2017)
  • A.I. Veinger, T.V. Tisnek, I.V. Kochman, V.I. Okulov,
    Magnetic-field-dependent microwave absorption in HgSe in weak magnetic fields, Semiconductors 51, 163 (2017)
  • A.A. Komlev, T.L. Makarova, E. Lahderanta, P.V. Semenikhin, A.I. Veinger, T.V. Tisnek, G. Magnani, G. Bertoni, D. Pontiroli, M. Ricco,
    Magnetism of aniline modified graphene-based materials, J. Magn. Magn. Mater. 415, 45 (2016)
    A.A. Komlev, T.L. Makarova, E. Lahderanta, P.V. Semenikhin, A.I. Veinger, T.V. Tisnek, G. Magnani, G. Bertoni, D. Pontiroli, M. Ricco,
    Corrigendum to “Magnetism of aniline modified graphene-based materials”, J. Magn. Magn. Mater. 421, 477 (2016)
  • M.P. Mikhailova, A.I. Veinger, I.V. Kochman, P.V. Semenikhin, K.V. Kalinina, R.V. Parfeniev, V.A. Berezovets, M.O. Safonchik, A. Hospodkova, J. Pangrac, M. Zikova, E. Hulicius,
    Microwave radiation absorption and Shubnikov-de Haas oscillations in semimetal InAs/GaSb/AlSb composite quantum wells, J. of Nanophotonics 10, 046013 (2016)

Contact Information

Tel.: +7 (812) 292 7152
E-mail: anatoly.veinger@mail.ioffe.ru
Contact person: Anatoly Veinger

Laboratory of nonequilibrium processes in semiconductors
Ioffe Institute, Russian Academy of Sciences
Politekhnicheskaya 26,
St.Petersburg, 194021 Russia