GaInAs - Gallium Indium Arsenide

Basic Parameters at 300 K

  Ga0.47In0.53As     GaxIn1-xAs Remarks Referens
Crystal structure Zinc Blende Zinc Blende 300 K  
Group of symmetry Td2-F43m Td2-F43m 300 K  
Number of atoms in 1 cm3 3.98·1022 (3.59-0.83x)·1022 300 K  
Bulk modulus 6.62·1011 dyn/cm2 (5.81+1.72x)·1011 dyn/cm2 300 K Goldberg Yu.A. & N.M. Schmidt (1999)
Debye temperature 330 K (280+110x) K 300 K  
Density 5.50 g·cm-3 (5.68-0.37x) g·cm-3 300 K  
Melting point, Tm   ~= 1100° C    
Specific heat 0.3 J g-1°C -1   300 K  
Thermal conductivity 0.05 W cm-1 °C -1
see Temerature dependences    
Thermal expansion coefficient, linear 5.66x10-6 °C -1 see Temerature dependences    
Dielectric constant (static) 13.9 15.1-2.87x+0.67x2 300 K  
Dielectric constant (high frequency) 11.6 12.3-1.4x 300 K  
Infrared refractive index n 3.43 cm2 V-1s-1 (3.51-0.16x ) V-1s-1 300 K
Radiative recombination coefficient 0.96 x 10-10 cm2/s  see Impact Ionization 300 K  
Energy gaps, Eg
0.74 eV
 
(0.36+0.63x+0.43x2) eV
(0.4105+0.6337x+0.475x2) eV
300 K
2 K
Goetz et al.(1983)
Effective electron mass me 0.041 mo (at n= 2·1017 cm-3) (0.023+0.037x+0.003x2) mo 300 K Pearsall (1982)
Effective hole masses mh 0.45 mo (0.41+0.1x) mo 300 K Goldberg Yu.A. & N.M. Schmidt (1999)
Effective hole masses mlp 0.052 mo (0.026+0.056x) mo 300 K  
Effective hole masses (split-off band) mso ~= 0.15 mo 300 K
Electron affinity 4.5 eV (4.9-0.83x) eV 300 K  
Lattice constant 5.8687 A (6.0583-0.405x) A 300 K  
Piezoelectric constant e14= -(0.045+0.115x) C/m2 300 K  
Optical phonon energy 34 meV  see Raman-active phonon modes 300 K