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Field dependences of the electron drift velocity for three GaInAsP composition alloys lattice-matched to InP. T=300 K. y=0.42, no= 1015 cm-3. (Galvanauskas et al. (1988)). |
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Field dependences of the electron drift velocity for three GaInAsP composition alloys lattice-matched to InP. T=300 K. y=0.65, no=8·1015 cm-3. (Galvanauskas et al. (1988)). |
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Field dependences of the electron drift velocity for three GaInAsP composition alloys lattice-matched to InP. T=300 K. y=0.8, no=2.5·1014 cm-3. (Galvanauskas et al. (1988)). |
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Field dependences of the electron drift velocity at high electric fields. Ga0.2In0.8As0.44P0.56 (λg=1.2µm). (Windhorn et al. (1982)).. |
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Temperature dependence of the electron saturation velocity for three different composition alloys lattice-matched to InP. 1. - y=0, 2. - y=0.44, 3. - y=1. (Adachi (1992)). |
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Composition dependence of the threshold electric field Eth for the GaxIn1-xAsyP1-y lattice-matched to InP. T=300 K. Experimental data are taken from different papers. (Adachi (1992)). |
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