| Remarks | Referens | ||
| Dielectric constant (static) | 9.7 | 300 K | Bougrov et al. (2001) |
| Dielectric constant (high frequency) | 5.3 | 300 K | |
| Infrared refractive index | ~=2.3 | 300 K | |
| Radiative recombination coefficient | 1.1 x 10-8 cm3 s-1 | 300 K; also see Recombination parameters |
Muth et al. (1997) |
| Optical phonon energy | 87.3 meV | 300 K |
| Remarks | Referens | ||
| Dielectric constant (static) | 8.9 |
300 K | Bougrov et al. (2001) |
| 10.4(3) 9.5(3) |
E||c E  c ; high frequency dielectric
constant assumed to be isotropic |
Barker et al.(1973) |
|
| Dielectric constant (high frequency) | 5.35 |
300 K |
Bougrov et al. (2001) |
| 5.8(4) 5.35(20) |
300 K, E||c 300 K, E c |
Manchon et al.(1970) Barker et al.(1973) |
|
| Refractive index, n | 2.29(5) | 300 K (extrapolated to 0 eV), E cinterference method (the value for E||c is 1.5(2)% lower at 500 nm); also see Energy dependence and long wavelength value |
Ejder (1971) |
| Infrared refractive index | ~=2.3 | 300 K | |
| Radiative recombination coefficient | 1.1 x 10-8 cm3 s-1. | 300 K; also see Recombination parameters |
Muth et al. (1997) |
| Optical phonon energy | 91.2 meV | 300 K | Bougrov et al. (2001) |
| phonon wavenumbers: | Remarks | Referens | |
| νA1(TO||) | 533 cm-1 | T=300K; Raman spectroscopy | Manchon et al.(1970) |
| νE1(TO)
|
559 cm-1 | T=300K; Raman spectroscopy | Lemos et al.(1972) |
| νE1(LO)
|
746 cm-1 | T=300K; Kramers-Kronig analysis of infrared reflectivity |
Barker & Ilegems (1973) |
| νA1(LO) | 744 cm-1 | T=300K; Kramers-Kronig analysis of infrared reflectivity |
Barker & Ilegems (1973) |
 |
GaN, Wurtzite sructure. Refractive index vs. photon energy at
300 K. Ec Ejder (1971). |
 |
GaN, Wurtzite. Refractive index n versus wavelength on sapphire
at 300 K Yu et al. (1997) |
 |
GaN, Wurtzite sructure. Long-wavelength refractive index normalized
to the 0 K value vs. temperature. Ejder (1971). |
 |
GaN, Wurtzite. Reflectance R as a function of photon energy
for single crystals (platelets). T = 2 K Dingle et al. (1971) |
 |
GaN, Wurtzite. Reflectance R as a function of photon energy
for two temperatures: T = 4.2 K; 295 K; Bloomet al. (1974) |
 |
GaN, Wurtzite. The absorption coefficient versus photon energy
for GaN layer grown on sapphire. T = 293 K Muth et al. (1997) |
 |
GaN, Wurtzite. The absorption coefficient versus photon energy
for GaN layer grown on sapphire. T = 77 K Muthet al. (1997) |
 |
GaN, Wurtzite. Axial absorption spectra for several GaN single
crystals (platelets) at low temperature. T ~= 5 K, E c
Dingle et al. (1971) |
 |
GaN, Wurtzite. The absorption coefficient versus photon energy
for GaN deposited on r-plane sapphire at different electron concentrations.
T= 300 K. n0 : 1 - 2 x 1016 cm-3, 2 - 2.8 x 1017 cm-3, 3 - 5 x 1017 cm-3, 4 - 2.3 x 1018 cm-3, 5 - 2 x 1019 cm-3 Ambacheret al. (1996) |
 |
GaN, Wurtzite. The absorption coefficient versus photon energy (MOCVD
on oplane sapphire). T= 300 K; n0 ~= 1017 cm-3. Ambacheret al. (1996) |
 |
GaN, Wurtzite. The absorption coefficient versus electron concentration
at photon energy Eph = 0.6 eV (free carrier absorption)
T= 300 K. Ambacheret al. (1996) |
 |
GaN, Wurtzite. The absorption coefficient versus wavelength. Electron
concentration n0: 1-6.3 x 1019 cm-3; 2-2.9 x 1019 cm-3; 3-1.8 x 1019 cm-3 Cunningham et al. (1972) |
 |
GaN, Wurtzite. Photoluminescence spectra for T = 2 K and
T = 50 K. Bulk-like sample with the thickness of 500 μm. Monemar et al. (1996) |
 |
GaN, Zinc Blende(cubic). Photoluminescence spectra for cubic GaN
grown on GaAs. T = 1.8 K Holst et al. (1989) |
|
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