|Energy gap||0.661 eV|
|Energy separation (EΓ1)||0.8 eV|
|Energy separation (ΔE>)||0.85 eV|
|Energy spin-orbital splitting||0.29 eV|
|Intrinsic carrier concentration||2.0·1013 cm-3|
|Intrinsic resistivity||46 Ω·cm|
|Effective conduction band density of states||1.0·1019 cm-3|
|Effective valence band density of states||5.0·1018 cm-3|
|Band structures of Ge.
|The temperature dependence of the intrinsic carrier concentration ni.|
|Fermi level versus temperature for different concentrations of shallow donors and acceptors.
Dashed line shows Fermi level dependence versus temperature for intrinsic Ge.
|Energy gap narrowing versus donor (curve 1) and acceptor (curve 2) doping density. Open curves are experimental values. (Jain and Roulston )|
|The surfaces of equal energy are ellipsoids|
|ml = 1.59mo|
|mt = 0.0815mo|
|Effective mass of density of states|
|Effective mass of conductivity||mcc=0.12mo|
|Heavy||mh = 0.33mo|
|Light||mlp = 0.043mo|
|Split-off band||mso = 0.084mo|
|Effective mass of density of states||mv = 0.34mo|