Electron mobility versus temperature for different doping levels.
1. High purity Ge; time-of-flight technique (Jacoboni et al. [1981]);
2-6. Hall effect Nd - Na(cm-3):
2. 1·1013; 3. 1.4·1014; 4. 1.7·1015; 5. 7.5·1015; 6. 5.5·1016 (Debye and Conwell [1954]);
7. Hall effect Nd - Na=1.2·1019(cm-3) (Fistul et al. [1962]).
For weakly doped Ge in the range 77-300 K electron mobility
µn≈ 4.9·107·T-1.66 (cm2 V-1 s-1).
Electron Hall mobility versus electron concentration
1. T = 77 K;
2. T = 300 K.
(Fistul et al. [1962]).

Approximate formula for the Hall mobility. 300 K.

µn=µOH/(1+Nd·10-17)1/2,
where µOH≈=3900 (cm2 V-1 s-1),
Nd- in cm-3
(Hilsum [1974]).
The electron Hall factor versus donor density.
1. T = 300 K;
2. T = 77 K. (Babich et al. [1969]).
Resistivity versus impurity concentration., T = 300 K.
(Cuttris [1981]).
Temperature dependences of hole mobility for different doping levels.
1. High purity Ge; time-of-flight technique (Ottaviany et al. [1973]).
2-7. Hall-effect (Golikova et al. [1961]).
Na- Nd (cm-3): 2. = 4.9·1013; 3. 3.2·1015; 4. 2.7·1016; 5. 1.2·1017; 6. 4.9·1018; 7. 2.0·1020.
For weakly doped Ge in the range 100-300 K hole mobility
µp≈1.05·109·T-2.33 (cm2 V-1 s-1)
The hole Hall mobility versus hole concentration.
Experimental points: data from three References (Golikova et al. [1961]).
The hole Hall factor versus temperature for high purity p-Ge
(Morin [1954]).