Wurtzite InN | Remarks | Referens | |
Conductivity σ | 2 ÷3 Ω-1 cm-1 | 300 K ; temperature coefficient of resistivity 3.7·10-3 K-1 at 200...300K for pressed powder |
Juza et al. (1956); Hovel & Cuomo (1972); Trainor & Rose (1974) |
Mobility electrons μn | 250(50) cm2 V-1 s-1 | 300 K ; see also Electron mobility vs. temperature | Hovel & Cuomo (1972) |
20 cm2 V-1 s-1 | Trainor & Rose (1974) | ||
35 ... 50 cm2 V-1 s-1 | Marasina et al. (1977) |
InN, Wurtzite. Electron Hall mobility vs. temperature for three
samples with RT and carrier concentrations: (1) - 5.3x1016 cm-3; (2) - 7.5x1016 cm-3; (3) - 1.8x1017 cm-3. Broken line: calculated ionized impurity scattering mobility, Dot-dashed line: empirical high-temperature mobility (μ~T-3) for sample (1) Solid lines: total mobility calculated for each sample. Tansley & Tansley (1984) |
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InN, Wurtzite, polycrystalline films. Electron Hall mobility versus
temperature for different doping levels and different degrees of compensation
θ = Na/Nd. 1 - Nd = 5.1 x 1016 cm-3, θ ~= 0.3; 2 - Nd = 8.7 x 1016 cm-3, θ ~= 0.6; 3 - Nd = 3.9 x 1017 cm-3, θ ~=0.8 Tansley & Tansley (1984). |
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InN, Wurtzite sructure. Electron drift (solid curves) and Hall
(dashed curves) mobility versus temperature calculated for carrier
concentration at different compensation ratios θ: n0 = 5 x 1016 cm-3; 1 - θ = 0; 2 - θ = 0.60; Experimental data are taken from Tansley & Foley (1984) Chin et al. (1994). |
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InN, Wurtzite sructure. Electron drift (solid curves) and Hall
(dashed curves) mobility versus temperature calculated for carrier
concentration at different compensation ratios θ: n0 = 8x 1016 cm-3; 1 - θ = 0; 2 - θ = 0.30; 3 - θ = 0.60; 4 - θ = 0.75; Experimental data are taken from Tansley & Foley (1984) Chin et al. (1994). |
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InN, Wurtzite sructure. The electron Hall mobility versus carrier
concentration. InN films grown on sapphire and GaAs substrates Yamamoto et al. (1998) |
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InN, Wurtzite sructure. The calculated electron drift (solid
curves) and Hall (dashed curves) mobility versus carrier concentration
at different compensation ratios θ: T = 77K. 1 - θ = 0; 2 - θ = 0.15; 3 - θ = 0.30; 4 - θ = 0.45; 5 - θ = 0.60; 6 - θ = 0.75; 7 - θ = 0.90. Experimental data are taken from Tansley & Foley (1984) Chin et al. (1994). |
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InN, Wurtzite sructure. The calculated electron drift (solid
curves) and Hall (dashed curves) mobility versus carrier concentration
at different compensation ratios θ: T = 300K. 1 - θ = 0; 2 - θ = 0.15; 3 - θ = 0.30; 4 - θ = 0.45; 5 - θ = 0.60; 6 - θ = 0.75; 7 - θ = 0.90. Experimental data are taken from Tansley & Foley (1984) Chin et al. (1994). |