Wurtzite InN  Remarks  Referens  
Conductivity σ  2 ÷3 Ω^{1} cm^{1}  300 K ; temperature coefficient of resistivity 3.7·10^{3} K^{1} at 200...300K for pressed powder 
Juza et al. (1956); Hovel & Cuomo (1972); Trainor & Rose (1974) 
Mobility electrons μ_{n}  250(50) cm^{2} V^{1} s^{1}  300 K ; see also Electron mobility vs. temperature  Hovel & Cuomo (1972) 
20 cm^{2} V^{1} s^{1}  Trainor & Rose (1974)  
35 ... 50 cm^{2} V^{1} s^{1}  Marasina et al. (1977) 
InN, Wurtzite. Electron Hall mobility vs. temperature for three
samples with RT and carrier concentrations: (1)  5.3x10^{16 }cm^{3}; (2)  7.5x10^{16 }cm^{3}; (3)  1.8x10^{17} cm^{3}. Broken line: calculated ionized impurity scattering mobility, Dotdashed line: empirical hightemperature mobility (μ~T^{3}) for sample (1) Solid lines: total mobility calculated for each sample. Tansley & Tansley (1984) 

InN, Wurtzite, polycrystalline films. Electron Hall mobility versus
temperature for different doping levels and different degrees of compensation
θ = N_{a}/N_{d}. 1  N_{d} = 5.1 x 10^{16} cm^{3}, θ ~= 0.3; 2  N_{d} = 8.7 x 10^{16} cm^{3}, θ ~= 0.6; 3  N_{d} = 3.9 x 10^{17} cm^{3}, θ ~=0.8 Tansley & Tansley (1984). 

InN, Wurtzite sructure. Electron drift (solid curves) and Hall
(dashed curves) mobility versus temperature calculated for carrier
concentration at different compensation ratios θ: n_{0} = 5 x 10^{16} cm^{3}; 1  θ = 0; 2  θ = 0.60; Experimental data are taken from Tansley & Foley (1984) Chin et al. (1994). 

InN, Wurtzite sructure. Electron drift (solid curves) and Hall
(dashed curves) mobility versus temperature calculated for carrier
concentration at different compensation ratios θ: n_{0} = 8x 10^{16} cm^{3}; 1  θ = 0; 2  θ = 0.30; 3  θ = 0.60; 4  θ = 0.75; Experimental data are taken from Tansley & Foley (1984) Chin et al. (1994). 

InN, Wurtzite sructure. The electron Hall mobility versus carrier
concentration. InN films grown on sapphire and GaAs substrates Yamamoto et al. (1998) 

InN, Wurtzite sructure. The calculated electron drift (solid
curves) and Hall (dashed curves) mobility versus carrier concentration
at different compensation ratios θ: T = 77K. 1  θ = 0; 2  θ = 0.15; 3  θ = 0.30; 4  θ = 0.45; 5  θ = 0.60; 6  θ = 0.75; 7  θ = 0.90. Experimental data are taken from Tansley & Foley (1984) Chin et al. (1994). 

InN, Wurtzite sructure. The calculated electron drift (solid
curves) and Hall (dashed curves) mobility versus carrier concentration
at different compensation ratios θ: T = 300K. 1  θ = 0; 2  θ = 0.15; 3  θ = 0.30; 4  θ = 0.45; 5  θ = 0.60; 6  θ = 0.75; 7  θ = 0.90. Experimental data are taken from Tansley & Foley (1984) Chin et al. (1994). 