| Si1-xGex see also Si. Electrical properties and Ge. Electrical properties |
Remarks | Referens | |
| Breakdown field | <3·105V/cm | 300 K | Schaffler F. et al.(2001) |
| Mobility electrons μn |  (1396-4315x) cm2 V-1
s-1 |
0  x 0.3,
300 K |
|
| Mobility holes μp | (450-865x) cm2 V-1
s-1 |
0 x 0.3,
300 K |
|
| Diffusion coefficient electrons | (36-112x) cm2/s | 0 x 0.3,
300 K |
|
| Diffusion coefficient holes | (12-22x) cm2/s | 0 x 0.3,
300 K |
|
| Electron thermal velocity | 2.4·105 m/s (x<0.85)3.1·105 m/s (x>0.85) |
300 K | |
| Hole thermal velocity | (1.65+0,25x) m/s | 300 K |
| |