1. GaN and GaN/GaAlN heterojunctions.

Reviews:

S. L. Rumyantsev, M. S. Shur, M. E. Levinshtein, "MATERIALS PROPERTIES OF NITRIDES. SUMMARY"  in "GaN-based materials and devices, Selected topics in electronics and systems"  v.33, eds. M.S.Shur and R.F. Devis, World Scientific, 2004, ISBN 981-238-844-3. 

S. L. Rumyantsev, N. Pala,  M. S. Shur, M.E. Levinshtein, R. Gaska, M. Asif Khan and G. Simin, "Generation-Recombination Noise in GaN-based Devices", in: "GaN-based materials and devices, Selected topics in electronics and systems" - v.33, eds. M.S.Shur and R.F. Devis, World Scientific, 2004, ISBN 981-238-844-3.

M. E. Levinshtein, S. L. Rumyantsev, M. S. Shur, R. Gaska, and M. Asif Khan, "Low frequency and 1/f noise in wide gap semiconductors: Silicon Carbide and Gallium Nitride” IEE Proceedings Circuits, Devices and Systems (Special Issue "Selected Topics on noise in semiconductor devices).v.149, no 1, pp.32-39 (2002)

Levinshtein M.E. "Nature of the 1/f noise in the main materials of semiconductor electronics: Si, GaAs, and SiC". Physica Scripta, v. 69, no 1, pp. 79-84 (1997)

Dyakonova N.V., M.E.Levinshtein, S.L.Rumyantsev, "Nature of the Bulk 1/f Noise in GaAs and Si" .
Sov. Phys. Semicond., v.25, no 12, pp.1241-1265 (1991)

1. A P Dmitriev, M E Levinshtein, E N Kolesnikova, J W Palmour, M K Das, and B A Hull "A model of the 1/f noise in a forward-biased p-n diode" Sem. Sci. Techn. v. 23, N1, 015011 (2008)

2. M. E. Levinshtein, S. L. Rumyantsev, R. Tauk, S. Boubanga, N. Dyakonova, W. Knap, A. Shchepetov, S. Bollaert, Y. Rollens, and M. S. Shur "Low frequency noise in InAlAs/InGaAs modulation doped field effect transistors with 50-nm gate length" J. Appl. Phys. 102, 064506 (2007)

3. S. L. Rumyantsev, A. P. Dmitriev, M. E. Levinshtein, D. Veksler, M. S. Shur, J. W. Palmour, M. K. Das, and B. A. Hull "Generation-recombination noise in forward-biased 4H-SiC p-n diode"  J. Appl. Phys. 100, 064505 (2006)

4. S. L. Rumyantsev, M. E. Levinshtein, S. A. Gurevich, V. M. Kozhevin, D. A. Yavsin, M. S. Shur, N. Pala and A. Khanna "Low-frequency noise in monodispersed platinum nanostructures near the percolation threshold" Physics of the Solid State 48, no 11, pp 2194-2198 (2006)

5. A. P. Dmitriev, M. E. Levinshtein, S. L. Rumyantsev, and M. S. Shur, “Tunneling mechanism of the 1/f noise in GaN/AlGaN heterojunction field-effect transistors”,  Appl. Phys. 97, 123706 (2005)

6. S. L. Rumyantsev, N. Pala, M. S. Shur, M.E. Levinshtein, R. Gaska,M. Asif Khan and G. Simin, "Generation-Recombination Noise in GaN-based Devices", Intern. Journ. High Speed Electron. and System., v. 14, No.1, pp. 175-195 (2004).

7. P. S. Kop'ev, S. L. Rumyantsev, N. Pala, and M. S. Shur "Low-Frequency Noise in Gallium Nitride Epitaxial Layers with Different Degrees of Order of Mosaic Structure" Semiconductors, v. 38 (9), pp. 998-1000 (2004)

8. T. T. Mnatsakanov, M. E. Levinshtein, L. I. Pomortseva, S .N. Yurkov, G. Simin, and M. Asif Khan “ Carrier mobility model for GaN” Solid-State Electronics vol. 47 (1), pp. 111 –115 (2003)

9. S. L. Rumyantsev, Y. Deng, M. S. Shur, M. E. Levinshtein, M. Asif Khan, G. Simin, J. Yang, X. Hu and R. Gaska "On the Low Frequency Noise Mechanisms in GaN/AlGaN HFETs" Semicond. Sci. Technol. v. 18 No 6, 589-593 (2003)

10.  M. E. Levinshtein, P A Ivanov, M Asif Khan, G Simin, J Zhang, X Hu, and J Yang  "Mobility Enhancement in AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field Effect TransistorsSemicond. Sci. Technol. v. 18 No 7, 666-669 (2003)  

11. P. A. Ivanov and M. E. Levinshtein “On the Causes of Low-Frequency Hysteresis and Current Dispersion in AlGaN/GaN HFETs” Technical Phys. Letters v. 29, (8),  pp. 646-648 (2003)

12. S. L. Rumyantsev, N. Pala, M. S. Shur, M. E. Levinshtein, M. Asif Khan, G.Simin, J. Yang, “Low frequency noise in GaN/AlGaN heterostructure field effect transistors in non-ohmic region”, Journal of Applied Physics, v 93, N12, pp. 10030-10034 (2003)