Low-frequency and 1/f Noise in
Semiconductors and Semiconductor Devices.
Power GaN and SiC devices.
Principal Scientist of the Ioffe Institute
of Russian Academy of Sciences,
Professor of St. Petersburg Technical State University
Laboratory of Semiconductor Physics Devices
Electrotechnical Institute, 1963.
Ph.D (Physics), The Ioffe Inst. of Russian Ac. of Sci., 1970.
|Academic Degrees:||Candidate (Ph.D), Ioffe
Doctor of Sci. (Habilitation), Ioffe Inst., 1980
|Professional Experience:||Principal Scientist of the
Ioffe Inst., (from 1995)
Prof. of St. Petersburg Techn. State Univ., (from 1994)
|Honors:||Prizes for the best paper of the Ioffe Institute:||1968, 1969, 1970, 1971, 1973, 1975, 1977, 1978, 1980, 1982, 1983, 1984, 1986, 1989, 1995|
|State Russian Stipend:Outstanding Scientist of Russia, 1997-2000|
|Prizes for the best paper of Solid State Electronics Division (The Ioffe Institute): 1999, 2000, 2004|
|Research Interests:||Low-frequency and
1/f noise in semiconductors and semiconductor devices,
power and superpower Si, SiC, and GaAs devices, hot electrons, Gunn effect.
Published or edited
Presentations (since 2008) Conferences, workshops
Research and lectures
Russian and International
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