Low-frequency and 1/f Noise in Semiconductors and Semiconductor Devices.
Power GaN and SiC devices.

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 Michael E. Levinshtein,
Principal Scientist of the Ioffe Institute
of Russian Academy of Sciences,
Professor of St. Petersburg Technical State University

Laboratory of  Semiconductor Physics Devices
Solid State Electronics Division
Ioffe Institute of Russian Academy of Sciences,
Politekhnicheskaya ul. 26, St. Petersburg, 194021, Russia
Tel: (812) 292-7988
Fax: (812) 297-1017
E-Mail: melev@nimis.ioffe.ru
Home Page: http://www.ioffe.rssi.ru/semdev/Levinsh.htm

Education: MSEE, Leningrad Electrotechnical Institute, 1963.
Ph.D (Physics), The Ioffe Inst. of Russian Ac. of  Sci., 1970.  
Academic Degrees: Candidate (Ph.D), Ioffe Inst., 1970.
Doctor of  Sci. (Habilitation), Ioffe Inst., 1980
Professional Experience: Principal Scientist of the Ioffe Inst., (from 1995)
Prof. of  St. Petersburg Techn. State Univ., (from 1994)
Honors: Prizes for the best paper of the Ioffe Institute: 1968, 1969, 1970, 1971, 1973, 1975, 1977, 1978, 1980, 1982, 1983, 1984, 1986, 1989, 1995
State Russian Stipend:Outstanding Scientist of Russia, 1997-2000
Prizes for the best paper of Solid State Electronics Division  (The Ioffe Institute): 1999, 2000, 2004
Research Interests: Low-frequency and 1/f noise in semiconductors and semiconductor devices,
power and superpower Si, SiC, and GaAs devices, hot electrons, Gunn effect.

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Published or edited

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            Refereed journals

 

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                   Research and lectures		   WB01539_.gif (682 bytes)   Cooperation
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This page was last updated 12-03-2015.

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