| 
 
 
  
    | SiC devices: Field Effect Transistors,
    Diodes, and Thyristors   |  
    | Cooperation: CREE
    Res., Inc, (USA)   |  
    | Main publications (from 
	2003): |  
    | 
T. T. Mnatsakanov, M. 
E. Levinshtein, and A. S. Freidlin " Effect of 
Auger Recombination on the Thermal Stability of High-Voltage High-Power 
Semiconductor Diodes" Semiconductors, v. 42, (2) pp. 220-227 (2008) 
Mnatsakanov, T.; Levinshtein, M.; Tandoev, A.; Yurkov
"Specific features of dynamic injection and base layer modulation processes 
in power n+-p-p+diodes" Semiconductors, Vol. 41 Issue 11, p1381-1387, (2007Michael E. Levinshtein, Tigran T. 
Mnatsakanov, Pavel A. Ivanov, John W. Palmour, Mrinal K. Das and Brett A. Hull 
"Steady state self-heating and dc current–voltage characteristics of 
high-voltage 4H-SiC p+–n–n+ rectifier diodes" 
Solid-State Electronics v. 51, (6) 955-960, 
(2007) 
M E Levinshtein, T T Mnatsakanov, P A Ivanov, J W Palmour, M K Das, and B A 
Hull "Isothermal Current-Voltage Characteristics of High Voltage Silicon 
Carbide Rectifier P-I-N Diodes at Very High Current Densities" Semicond. Sci. 
Technol., v. 22 (3), 253-258 (2007)P. A. Ivanov, M. E. Levinshtein, J. W. Palmour, A. K. 
Agarwal, and S. Krishnaswami "Current Gain of 4H-SiC High Voltage BJTs at 
Reduced Temperatures" Semicond. Sci. Technol., v. 22 (6), 613-615 (2007)T T Mnatsakanov, M E Levinshtein, A S Freidlin and J W 
Palmour "On the thermal stability of high voltage rectifier diodes"  
Semicond. Sci. Technol., v. 21 (9), 1244-1249 (2006)
 M. 
E. Levinshtein, S. L. Rumyantsev, T. T. Mnatsakanov, A. K. Agarwal, J. W. 
Palmour "SiC Thyristors"   Intern. Journ. of High Speed Eelectron. 
and Systems 15 (4), 921-1114 (2006)
Pavel A. Ivanov, Michael E. Levinshtein, John W. Palmour, Mrinal K. Das, Brett 
A. Hull "High power 4H-SiC pin diodes (10 kV class) with record high carrier 
lifetime" Solid-State Electronics 50 (7-8), 1368-1370 (2006)
T. T. Mnatsakanov, M. E. Levinshtein, 
A. G. Tandoev, P. A. Ivanov , S. N. Yurkov, and J. W. Palmour "Transient 
injection and fast switch-on in p-i-n diodes"  J. Appl. Phys. 99, 
074503 (2006)
 P. A. Ivanov, M. E. Levinshtein, A. 
K. Agarwal, Sumi Krishnaswami, and J.W. Palmour, "Temperature Dependence of 
the Current Gain in Power 4H-SiC NPN BJTs" IEEE Trans. on ED, 53, no.5, 
pp.1245-1249 (2006) |  Back  |