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Laboratory of
Semiconductor Devices Physics

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Group of the
Low-frequency and 1/f Noise in
Semiconductors and Semiconductor Devices.
Power GaN and SiC Devices

( Headed by Michael E. Levinshtein, Prof.)  
Tel: (812)-297 79 88 Fax: (812) 297 10 17 E-mail:
melev@nimis.ioffe.rssi.ru


SiC devices: Field Effect Transistors, Diodes, and Thyristors

 

Cooperation: CREE Res., Inc, (USA)

 

Main publications (from 2003):
  1. T. T. Mnatsakanov, M. E. Levinshtein, and A. S. Freidlin " Effect of Auger Recombination on the Thermal Stability of High-Voltage High-Power Semiconductor Diodes" Semiconductors, v. 42, (2) pp. 220-227 (2008)
  2. Mnatsakanov, T.; Levinshtein, M.; Tandoev, A.; Yurkov "Specific features of dynamic injection and base layer modulation processes in power n+-p-p+diodes" Semiconductors, Vol. 41 Issue 11, p1381-1387, (2007
  3. Michael E. Levinshtein, Tigran T. Mnatsakanov, Pavel A. Ivanov, John W. Palmour, Mrinal K. Das and Brett A. Hull "Steady state self-heating and dc current–voltage characteristics of high-voltage 4H-SiC p+–n–n+ rectifier diodes" Solid-State Electronics v. 51, (6) 955-960, (2007)
  4. M E Levinshtein, T T Mnatsakanov, P A Ivanov, J W Palmour, M K Das, and B A Hull "Isothermal Current-Voltage Characteristics of High Voltage Silicon Carbide Rectifier P-I-N Diodes at Very High Current Densities" Semicond. Sci. Technol., v. 22 (3), 253-258 (2007)
  5. P. A. Ivanov, M. E. Levinshtein, J. W. Palmour, A. K. Agarwal, and S. Krishnaswami "Current Gain of 4H-SiC High Voltage BJTs at Reduced Temperatures" Semicond. Sci. Technol., v. 22 (6), 613-615 (2007)
  6. T T Mnatsakanov, M E Levinshtein, A S Freidlin and J W Palmour "On the thermal stability of high voltage rectifier diodes"  Semicond. Sci. Technol., v. 21 (9), 1244-1249 (2006)
  7.  M. E. Levinshtein, S. L. Rumyantsev, T. T. Mnatsakanov, A. K. Agarwal, J. W. Palmour "SiC Thyristors"   Intern. Journ. of High Speed Eelectron. and Systems 15 (4), 921-1114 (2006)

  8. Pavel A. Ivanov, Michael E. Levinshtein, John W. Palmour, Mrinal K. Das, Brett A. Hull "High power 4H-SiC pin diodes (10 kV class) with record high carrier lifetime" Solid-State Electronics 50 (7-8), 1368-1370 (2006)

  9. T. T. Mnatsakanov, M. E. Levinshtein, A. G. Tandoev, P. A. Ivanov , S. N. Yurkov, and J. W. Palmour "Transient injection and fast switch-on in p-i-n diodes"  J. Appl. Phys. 99, 074503 (2006)

  10.  P. A. Ivanov, M. E. Levinshtein, A. K. Agarwal, Sumi Krishnaswami, and J.W. Palmour, "Temperature Dependence of the Current Gain in Power 4H-SiC NPN BJTs" IEEE Trans. on ED, 53, no.5, pp.1245-1249 (2006)

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