FRIENDS.GIF (1035 bytes)     Cooperation:


Investigation of the low frequency and 1/f noise:

in 4H-SiC, 6H-SiC, and SiC FETs:                CREE Res., Inc    
in GaN and GaN/GaAlN Heterostructures:  Univ. of Montpellier (France),  Division of Physics of  Semiconductor Heterostructures (The Ioffe, Russia) , WBG (Wide Band Group, the Ioffe, Russia), Rensselaer Polytechnic Institute (USA), University of South Caroline,
in Si, GaAs, and Si- and GaAs devices: Univ. of Montpellier (France), The Ioffe Institute, Russia.
Investigation of the static and transient properties
of 
thyristors, and power rectifier diodes:
in Si thyristors and diodes:
Laboratory of Power Semiconductor Devices
(The Ioffe, Russia)
in GaAs thyristors and diodes: Laboratory of Epitaxial Structures and Devices
(The Ioffe, Russia), Univ. of Oulu (Finalnd)
in SiC thyristors and diodes: CREE Res., Inc 
 
Avalanche injection and breakdown Univ. of Oulu (Finalnd)

 

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