Conference Presentations (since
2008):
-
S. Rumyantsev,
M. Levinshtein, M. Shur, L. Cheng, A. Agarwa, J. Palmour,
Optical triggering of high current (1300 A),
high-voltage (12 kV) 4H-SiC thyristor,
Proc.of 15-th Intern. Conference on Silicon Carbide and
Related
Materials ICSCRM 2013, Miyazaki, Japan, Sept 29 - Oct
04, 2013,
Material Science Forum Vols 778-780, 1021-1024
-
J. Renteria, R.
Samnakay, M. E. Levinshtein, S. L. Rumyantsev, P. Goli,
A. A. Balandin and M.S. Shur “1/f Noise in MoS2
Transistors”
Proc. of 22nd Int. Symp. “Nanostructures: Physics and
Technology” Saint Petersburg,
Russia, June 23–27, 2014, pp. 53-54
-
E. Shabunina,
M. Levinshtein, N. Shmidt, P. Ivanov, J. W. Palmour
“Specific features of the 1/f noise in nano-sized
patches of high voltage
4H-SiC Schottky structures”,
Proc. of 22nd Int. Symp. “Nanostructures: Physics and
Technology” Saint Petersburg,
Russia, June 23–27, 2014, pp. 161-162
-
Greshnov, A. Chernyakov, M. Levinshtein, A. I. Zakgeim, N. Shmidt, E. Shabunina "Mechanisms behind efficiency drop and degradation in InGaN/GaN LEDs", Abstract Book of 4-th Intern. Symp. on growth of III-Nitrides, St. Petersburg, Russia, July 16-19 (2012), p. 150
-
N. Averkiev, A. Chernyakov, M. Levinshtein, P. Petrov, N. Shmidt, E. Shabunina, "Extended defects system as a main source of non-radiative recombination in InGaN/GaN LEDs", Abstract Book of 4-th Intern. Symp. on growth of III-Nitrides, St. Petersburg, Russia, July 16-19 (2012), p. 149
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A .E. Chernyakov , M.E. Levinshtein, P.V. Petrova, N.M. Shmidt, E.I. Shabunina, A.L. Zakheim "Failure mechanisms in power blue InGaN/GaN LEDs"
23rd European Symposium on Reliability of Electron Devices, Failure Physics and Analysis
October 1 - 5, 2012 Cagliari, Italy
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Левинштейн М. Е., Шуман В. Б., МнацакановТ.Т., Тандоев А. Г., Юрков С. Н., Palmour J . W . «Экспериментальная верификация нового подхода к описанию квазинейтральных режимов переноса в полупроводниках на примере кремниевых p +- n - n + диодов»
Abstract Book of 9-th Intern Conf "Silicon 2012" , St Petersburg, July 09-13 (2012), p.329-330
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Q. Jon Zhang, Anant K. Agarwal, Craig Capell, L. Cheng, Michael J. O'Loughlin, Albert A. Burk, John W. Palmour, Sergey L. Rumyantsev, T. Saxena, Michael E. Levinshtein, A. Ogunniyi, Heather O'Brien, Charles J. Scozzie "12 kV, 1 cm2 SiC GTO Thyristors with Negative Bevel Termination" ICSCRM 2011, September 11 - 16, 2011, Cleveland, Ohio, USA, Materials Science Forum v . 717-720, 1151-1154 (2012)
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E.И.
Шабунина, Н.M. Шмидт, A.E. Черняков, П.В. Петров, M.E.
Левинштейн, Н.С. Аверкиев, "Низкочастотный шум в
подвергнутых деградации InGaN/GaN синих светодиодах" Тезисы
докладов 8-ой Всероссийской конференции "Нитриды галлия,
индия и алюминия – структуры и приборы", 26-18 мая
2011, Ст. Петербург, стр 105-106
Н.M.
Шмидт, Н.С. Аверкиев, Д. А. Бауман, А. Л. Закгейм, M.E.
Левинштейн, П.В. Петров, A.E. Черняков, E.И. Шабунина, "Причины
неоднозначного развития деградационного процесса в синих
InGaN/GaN светодиодах", Тезисы докладов 8-ой Всероссийской
конференции "Нитриды галлия, индия и алюминия –
структуры и приборы", 26-18 мая 2011, Ст. Петербург, стр
109-110
S.
L. Rumyantsev, M. E. Levinshtein, M S Shur, J. W. Palmour, A. K.
Agarwal, and M K Das, "Low Frequency Noise as a tool to
study degradation processes in 4H-SiC p-n junctions"
Proceedings of 21-th International Conference on Noise and
Fluctiations, ICNF-2011, June 12-16, 2011, Toronto, Canada, pp
104-105
S.
L. Rumyantsev, M. S. Shur, M. E. Levinshtein, P. A. Ivanov, .J.
W. Palmour, A. K. Agarwal, and S. Dhar "4H-SiC MOSFETs with
Si-like low-frequency noise characteristics" Proceedings of
Intern. Conference on Silicon Carbide and Related Materials
ICSCRM 2011, September 11 – 16, 2011, Cleveland, Ohio, USA
P.
Ivanov, Michael Levinshtein, John Palmour, Anant Agarwal, Jon
Zhang, "Fast switch-off of high voltage 4H–SiC npn
BJTs from deep saturation mode", Intern. Conference on
Silicon Carbide and Related Materials ICSCRM 2009, Nurnberg,
11-6th October 2009; Material Sci. Forum v 645-648, 1049-1052
(2010)
S
L Rumyantsev, M E Levinshtein, M S Shur, J W Palmour, A K
Agarwal, and M K Das, "Low Frequency Noise and Degradation
Processes in 4H-SiC p-n junctions", The 8th European
Conference on Silicon Carbide and Related Materials Oslo,
Norway. August 29 – September 2, 2010, Technical Digest
M.
E. Levinshtein, S. L. Rumyantsev, "The 1/f noise: burial is
abolished (or postponed)" (invited), 2009 Advanced Research
Workshop Future trends in microelectronics: Unmapped Roads,
Sardinia, Italy, June 14-19 (2009)
S.
L. Rumyantsev, M. E. Levinshtein, P. A. Ivanov, M. S. Shur, J.
W. Palmour, A. K. Agarwal, B. A. Hull, S. H. Ryu, "Noise
and Interface Density of Traps in 4H-SiC MOSFETs", 20th
International Conference on Noise and Fluctuations, ICNF 2009,
June 14th-19th, 2009 Pisa, Italy, AIP Conf. Proceedings, 1129,
p.341
S.
L. Rumyantsev, M. S. Shur, A. V. Davydov, M.. E. Levinshtein,
"Low frequency noise in nano-objects", Advanced
Materials and Technologies for Micro/Nano-Devices, Sensors and
Actuators, Advanced Research Workshop, June 29-July 02, St.
Petersburg, Russia (oral)
N.S.
Averkiev, A.E. Chernyakov, M.E. Levinshtein, P.V. Petrov, E.I.
Shabunina, N.M. Shmidt, E.B. Yakimov, "Two channels of
non-radiative recombination in InGaN/GaN LEDs", 25-th
Intern. Conf. on Defects in Semiconductors. St. Petersburg,
Russia, July 20-24, 2009.Abstracts, pp. 413-414
S.
L. Rumyantsev, M. S. Shur, M. E. Levinshtein, A. Motayed, and A.
V. Davydov, "Electrical and noise characteristics of GAN
Nanowire Transistors", 6th All-Russian Conference Gallium,
Aluminum and Indium Nitrides, June 18 - 20, 2008, St Petersburg,
Russia, Abstracts, pp. 144-145
Pavel
Ivanov, Michael Levinshtein, John Palmour, Mrinal Das, Brett
Hull, Michael Shur, Sergey Rumyantsev "Low frequency noise
in 4H-SiC MOSFETs", Abstracts of European Conference on
Silicon Carbide and Related Materials ECSCRM 2008, Barcelona,
7-11th September 2008
Dyakonova
N., Coquillat D., Teppe F., Knap W., Levinshtein M. E.,
Rumyantsev S. L., Poisson M.-A., Delage S., Gaquiere C.,
Vandenbrouk S., Cappy A. "THz emission from AlGaN/GaN high
mobility transistors", Пятая
Международная Конференция «Фундаментальные
проблемы оптики»
«ФПО
– 2008»
Санкт
– Петербург,
Россия,
20 октября
– 24
октября
2008
г
(постер)
Е.
И. Шабунина, Н. С. Аверкиев, А. Ю. Кислякова, М. Е. Левинштейн,
П. В. Петров, А. Е. Черняков, Н. М. Шмидт "Низкочастотный
шум светодиодов на основе квантоворазмерных структур InGaN/GaN"
Международный семинар по опто- и наноэлектронике, Санкт –
Петербург, Россия, 27 октября 2008 года (постер)
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