Conference Presentations (since 2008):

  1. S. Rumyantsev, M. Levinshtein, M. Shur, L. Cheng, A. Agarwa, J. Palmour,
    Optical triggering of high current (1300 A), high-voltage (12 kV) 4H-SiC thyristor,
    Proc.of 15-th Intern. Conference on Silicon Carbide and Related
    Materials ICSCRM 2013, Miyazaki, Japan, Sept 29 - Oct 04, 2013,
    Material Science Forum Vols 778-780, 1021-1024

  2. J. Renteria, R. Samnakay, M. E. Levinshtein, S. L. Rumyantsev, P. Goli,
    A. A. Balandin and M.S. Shur “1/f Noise in MoS2 Transistors”
    Proc. of 22nd Int. Symp. “Nanostructures: Physics and Technology” Saint Petersburg,
    Russia, June 23–27, 2014, pp. 53-54

  3. E. Shabunina, M. Levinshtein, N. Shmidt, P. Ivanov, J. W. Palmour
    “Specific features of the 1/f noise in nano-sized patches of high voltage
    4H-SiC Schottky structures”,
    Proc. of 22nd Int. Symp. “Nanostructures: Physics and Technology” Saint Petersburg,
    Russia, June 23–27, 2014, pp. 161-162

  4. Greshnov, A. Chernyakov, M. Levinshtein, A. I. Zakgeim, N. Shmidt, E. Shabunina "Mechanisms behind efficiency drop and degradation in InGaN/GaN LEDs", Abstract Book of 4-th Intern. Symp. on growth of III-Nitrides, St. Petersburg, Russia, July 16-19 (2012), p. 150

  5. N. Averkiev, A. Chernyakov, M. Levinshtein, P. Petrov, N. Shmidt, E. Shabunina, "Extended defects system as a main source of non-radiative recombination in InGaN/GaN LEDs", Abstract Book of 4-th Intern. Symp. on growth of III-Nitrides, St. Petersburg, Russia, July 16-19 (2012), p. 149

  6. A .E. Chernyakov , M.E. Levinshtein, P.V. Petrova, N.M. Shmidt, E.I. Shabunina, A.L. Zakheim "Failure mechanisms in power blue InGaN/GaN LEDs"
    23rd European Symposium on Reliability of Electron Devices, Failure Physics and Analysis
    October 1 - 5, 2012 Cagliari, Italy

  7. Левинштейн М. Е., Шуман В. Б., МнацакановТ.Т., Тандоев А. Г., Юрков С. Н., Palmour J . W . «Экспериментальная верификация нового подхода к описанию квазинейтральных режимов переноса в полупроводниках на примере кремниевых p +- n - n + диодов»
    Abstract Book of 9-th Intern Conf "Silicon 2012" , St Petersburg, July 09-13 (2012), p.329-330

  8. Q. Jon Zhang, Anant K. Agarwal, Craig Capell, L. Cheng, Michael J. O'Loughlin, Albert A. Burk, John W. Palmour, Sergey L. Rumyantsev, T. Saxena, Michael E. Levinshtein, A. Ogunniyi, Heather O'Brien, Charles J. Scozzie "12 kV, 1 cm2 SiC GTO Thyristors with Negative Bevel Termination" ICSCRM 2011, September 11 - 16, 2011, Cleveland, Ohio, USA, Materials Science Forum v . 717-720, 1151-1154 (2012)

  9. E.И. Шабунина, Н.M. Шмидт, A.E. Черняков, П.В. Петров, M.E. Левинштейн, Н.С. Аверкиев, "Низкочастотный шум в подвергнутых деградации InGaN/GaN синих светодиодах" Тезисы докладов 8-ой Всероссийской конференции "Нитриды галлия, индия и алюминия – структуры и приборы", 26-18 мая 2011, Ст. Петербург, стр 105-106

  10. Н.M. Шмидт, Н.С. Аверкиев, Д. А. Бауман, А. Л. Закгейм, M.E. Левинштейн, П.В. Петров, A.E. Черняков, E.И. Шабунина, "Причины неоднозначного развития деградационного процесса в синих InGaN/GaN светодиодах", Тезисы докладов 8-ой Всероссийской конференции "Нитриды галлия, индия и алюминия – структуры и приборы", 26-18 мая 2011, Ст. Петербург, стр 109-110

  11. S. L. Rumyantsev, M. E. Levinshtein, M S Shur, J. W. Palmour, A. K. Agarwal, and M K Das, "Low Frequency Noise as a tool to study degradation processes in 4H-SiC p-n junctions" Proceedings of 21-th International Conference on Noise and Fluctiations, ICNF-2011, June 12-16, 2011, Toronto, Canada, pp 104-105

  12. S. L. Rumyantsev, M. S. Shur, M. E. Levinshtein, P. A. Ivanov, .J. W. Palmour, A. K. Agarwal, and S. Dhar "4H-SiC MOSFETs with Si-like low-frequency noise characteristics" Proceedings of Intern. Conference on Silicon Carbide and Related Materials ICSCRM 2011, September 11 – 16, 2011, Cleveland, Ohio, USA

  13. P. Ivanov, Michael Levinshtein, John Palmour, Anant Agarwal, Jon Zhang, "Fast switch-off of high voltage 4H–SiC npn BJTs from deep saturation mode", Intern. Conference on Silicon Carbide and Related Materials ICSCRM 2009, Nurnberg, 11-6th October 2009; Material Sci. Forum v 645-648, 1049-1052 (2010) 

  14. S L Rumyantsev, M E Levinshtein, M S Shur, J W Palmour, A K Agarwal, and M K Das, "Low Frequency Noise and Degradation Processes in 4H-SiC p-n junctions", The 8th European Conference on Silicon Carbide and Related Materials Oslo, Norway. August 29 – September 2, 2010, Technical Digest 

  15. M. E. Levinshtein, S. L. Rumyantsev, "The 1/f noise: burial is abolished (or postponed)" (invited), 2009 Advanced Research Workshop Future trends in microelectronics: Unmapped Roads, Sardinia, Italy, June 14-19 (2009) 

  16. S. L. Rumyantsev, M. E. Levinshtein, P. A. Ivanov, M. S. Shur, J. W. Palmour, A. K. Agarwal, B. A. Hull, S. H. Ryu, "Noise and Interface Density of Traps in 4H-SiC MOSFETs", 20th International Conference on Noise and Fluctuations, ICNF 2009, June 14th-19th, 2009 Pisa, Italy, AIP Conf. Proceedings, 1129, p.341 

  17. S. L. Rumyantsev, M. S. Shur, A. V. Davydov, M.. E. Levinshtein, "Low frequency noise in nano-objects", Advanced Materials and Technologies for Micro/Nano-Devices, Sensors and Actuators, Advanced Research Workshop, June 29-July 02, St. Petersburg, Russia (oral) 

  18. N.S. Averkiev, A.E. Chernyakov, M.E. Levinshtein, P.V. Petrov, E.I. Shabunina, N.M. Shmidt, E.B. Yakimov, "Two channels of non-radiative recombination in InGaN/GaN LEDs", 25-th Intern. Conf. on Defects in Semiconductors. St. Petersburg, Russia, July 20-24, 2009.Abstracts, pp. 413-414 

  19. S. L. Rumyantsev, M. S. Shur, M. E. Levinshtein, A. Motayed, and A. V. Davydov, "Electrical and noise characteristics of GAN Nanowire Transistors", 6th All-Russian Conference Gallium, Aluminum and Indium Nitrides, June 18 - 20, 2008, St Petersburg, Russia, Abstracts, pp. 144-145 

  20. Pavel Ivanov, Michael Levinshtein, John Palmour, Mrinal Das, Brett Hull, Michael Shur, Sergey Rumyantsev "Low frequency noise in 4H-SiC MOSFETs", Abstracts of European Conference on Silicon Carbide and Related Materials ECSCRM 2008, Barcelona, 7-11th September 2008 

  21. Dyakonova N., Coquillat D., Teppe F., Knap W., Levinshtein M. E., Rumyantsev S. L., Poisson M.-A., Delage S., Gaquiere C., Vandenbrouk S., Cappy A. "THz emission from AlGaN/GaN high mobility transistors", Пятая Международная Конференция  «Фундаментальные проблемы оптики» «ФПО – 2008» Санкт – Петербург, Россия, 20 октября – 24 октября 2008 г (постер)

  22. Е. И. Шабунина, Н. С. Аверкиев, А. Ю. Кислякова, М. Е. Левинштейн, П. В. Петров, А. Е. Черняков, Н. М. Шмидт "Низкочастотный шум светодиодов на основе квантоворазмерных структур InGaN/GaN" Международный семинар по опто- и наноэлектронике, Санкт – Петербург, Россия, 27 октября 2008 года (постер)

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