Publications (since 2008):

  1. T. T. Mnatsakanov, S. N. Yurkov, M. E. Levinshtein, L. Cheng, and J. W. Palmour
    “Specific features of switch-on processes in high voltage (18-kV-class) optically triggered 4H-SiC thyristors”  Semicond. Sci. Technol. 29 (2014) 055005 (5 pp)

  2. E.I. Shabunina, M.E. Levinshtein, N.M. Shmidt, P.A. Ivanov, J.W. Palmour.
    1/f noise in forward biased high voltage 4H-SiC Schottky diodes.
    Solid-State Electronics 96 (2014) 44–47

  3. A.E. Chernyakov, M.E. Levinshtein, N.A. Talnishnikh, E.I. Shabunina, N.M. Shmidt
    Low-frequency noise in diagnostics of power blue InGaN/GaN LEDs
    Journal of Crystal Growth, 401, 302–304 (2014)

  4. Патент: Левинштейн М.Е., Шабунина Е. И., Шмидт Н. М. «Способ отбраковки мощных светодиодов на основе InGaN/GaN. Патент RU 2523105 от 22 мая 2014 года. Опубликован 20.07.2014 Бюл. №20.

  5. S. N. Yurkov, T. T. Mnatsakanov, M. E. Levinshtein, L. Cheng, and J. W. Palmour
    "Specific features of gate current and different switch-on modes in silicon carbide thyristors"
    Semicond. Sci. Technol. 29 (2014) 125012 (7 pp)

  6. M E Levinshtein, S L Rumyantsev, M S Shur, T T Mnatsakanov, S.N. Yurkov, Q J Zhang, A K Agarwal, L. Cheng, J W Palmour "Holding current and switch-on mechanisms in 12 kV, 100 A 4H-SiC optically triggered thyristors" Semicond. Sci. Technol. 28 (2013) 015008 (5pp)

  7. В. С. Юферев, М. Е. Левинштейн, J. W. Palmour "Особенности стационарного распределения носителей и тока удержания в SiC фототиристоре" ФТП, 47 (1), стр. 118-123 (2013)
    V. S. Yuferev, M. E. Levinshtein, and J. W. Palmour "Specific Features of the Steady-State Carrier Distribution and Holding Current in an Optically Triggered SiC Thyristor" Semiconductors Volume 47, Number 1, 116-121 (2013)

  8. T. T. Мнацаканов, А. Г. Тандоев, М. Е. Левинштейн, С. Н. Юрков, J. W. Palmour "Нарушение нейтральности и возникновение S-образной вольтамперной характеристики при двойной инжекции в легированных полупроводниках."
    ФТП, 47 (3), стр. 302-309 (2013)
    T. T. Mnatsakanov, A. G. Tandoev, M. E. Levinshtein, S. N. Yurkov, and J. W. Palmour "Violation of Neutrality and Occurrence of S-Shaped Current-Voltage Characteristic for Doped Semiconductors under Double Injection"
    Semiconductors, , Vol. 47, No. 3, pp. 327-334 (2013)

  9. Chernyakov A. E., Levinshtein M. E., Petrov P, V, Shmidt N. M., Shabunina E. I., Zakheim A. L., "Failure mechanisms in blue InGaN/GaN LEDs for high power operation"
    Microelectronics Reliability 52 (9-10), 2180-2183 (2012)

  10. М.Е. Левинштейн, Т.Т. Мнацаканов, С.Н. Юрков, J. W. Palmour "Перегрев SiC фототиристора в процессе включения и распространения включенного состояния"
    ФТП, 46 (9), стр. 1224-1229 (2012)
    M. E. Levinshtein, T. T. Mnatsakanov, S. N. Yurkov, and J. W. Palmour "Overheating of an Optically Triggered SiC Thyristor during Switch-on and Turn-on Spread"
    Semiconductors Volume 46, Number 9, 1201-1206 (2012)

  11. V. S. Yuferev, M E Levinshtein, J W Palmour "A model of the turn-on spread in optically triggered SiC thyristors"
    Semicond. Sci. Technol. 27 (2012) 035004 (5pp)

  12. Закгейм А.Л., Левинштейн М.Е., Петров П.В., Черняков А.Е., Шабунина Е.И., Шмидт Н.М. "Низкочастотный шум в исходных и деградировавших синих InGaN/GaN светодиодах" ФТП, 46 (2), 219-223 (2012)

  13. S L Rumyantsev, M E Levinshtein, M S Shur, T. Saxena, Q J Zhang, A K Agarwal, J W Palmour, "Optical triggering of 12 kV, 100 A 4H-SiC thyristors" Semicond. Sci. Technol. 27 015012 (4pp) (2012)

  14. Т.Т. Мнацаканов, М.Е. Левинштейн, А.Г. Тандоев, С.Н. Юрков "Модуляционные волны носителей заряда в полупроводниковых слоях n- и p-типа" ФТП, 45 (2), стр 196-201 (2011)
    T. T. Mnatsakanov, M. E. Levinshtein, A. G. Tandoev, and S. N. Yurkov "Modulation Waves of Charge Carriers in n- and p-_Type Semiconductor Layers", Semiconductors, 45, No. 2, 192–197. (2011)

  15. Tigran T. Mnatsakanov, Alexey G. Tandoev, Michael E. Levinshtein, Sergey N. Yurkov "Physical limitations of the diffusive approximation in semiconductor device modeling" Solid-State Electronics 56, 60-67 (2011)

  16. Левинштейн М.Е., Иванов П.А., Palmour J.W., Agarwal A.K., Das M.K. "Особенности деградации высоковольтных 4H-SiC p-i-n диодов под действием импульсов прямого тока." Письма в ЖТФ, 37, (8), стр. 7-12 (2011)
    Levinshtein M E, Ivanov A. M., Palmour J.W., Agarwal A.K., Das M.K "Features of Degradation in High_Voltage 4H_SiC p–i–n Diodes under the Action of Forward Current Pulses" Technical Physics Letters, 37, (4), 3472-349 (2011)

  17. M. E. Levinshtein, T T Mnatsakanov, A. K. Agarwal, J.W. Palmour "Analytical and Numerical Studies of p+-Emitters to Silicon Carbide Bipolar Devices" Semicond. Sci. Techn. 26 055024 (8pp) (2011)

  18. V. B. Shuman, T. T. Mnatsakanov, M. E. Levinshtein, A. G. Tandoev, S. N. Yurkov, and J. W. Palmour "Experimental verification of a new approach to analysis of the quasineutral carrier transport in semiconductors and semiconductor structures" Semocond. Sci. Techn. 26, 085016 (7pp) (2011)

  19. S L Rumyantsev, M S Shur, M E Levinshtein, P A Ivanov, J W Palmour, A K Agarwal, S. Dhar
    "Si-like low-frequency noise characteristics of 4H-SiC MOSFETs" Semocond. Sci. Techn. 26, 085015 (5pp) (2011)

  20. Иванов А. М., Левинштейн М.Е., Palmour J.W., Agarwal A.K., Das M.K. " Активация донорного центра в высоковольтных 4H-SiC p-i-n диодах под действием прямого тока. Письма в ЖТФ, 37, (19), стр.45-50 (2011)
    Ivanov A. M., Levinshtein M E, Palmour J.W., Agarwal A.K., Das M.K " Forward Current Generated Donor Centers in High_Voltage 4H_SiC Based p–i–n Diodes" Technical Physics Letters, 37, (10), 911–913 (2011)

  21. P.A. Ivanov, M.E. Levinshtein, J.W. Palmour, A.K. Agarwal, J. Zhang "Fast turn-off of high voltage 4H–SiC npn BJTs from saturation on-state regime", Semicond. Sci. Technol. (3 pages) 25, 045030 (2010)

  22. S.L. Rumyantsev, M.E. Levinshtein, M.S. Shur, J.W. Palmour, A.K. Agarwal, M.K. Das "Effect of forward current stress on low frequency noise in 4H–SiC p-n junctions", J. Appl. Phys. (5 pages) 108, 024508 (2010)

  23. T. T. Mnatsakanov, A. G. Tandoev, S. N. Yurkov, M. E. Levinshtein "Non-conventional quasineutral mode of carrier transport in semiconductors and semiconductor structures", J. Appl. Phys. 105, 044506 (2009)

  24. T. T. Mnatsakanov, A. G. Tandoev, S. N. Yurkov, M. E. Levinshtein "Specific features of quasineutral modes of carrier transport in semiconductors and semiconductor structures", Semicond. Sci. Technol. (8 pages) 24, 075006 (2009)

  25. S L Rumyantsev, M S Shur, M E Levinshtein, P A Ivanov, J W Palmour, A K Agarwal, B A Hull and Sei-Hyung Ryu "Channel mobility and on-resistance of vertical double implanted 4H-SiC MOSFETs at elevated temperatures", Semicond. Sci. Technol. (6 pages) 24, 075011 (2009)

  26. N. S. Averkiev, M. E. Levinshtein, P. V. Petrov, A. E. Chernyakov, E. I. Shabunina and N. M. Shmidt "Features of the recombination processes in InGaN/GaN based LEDs at high densities of injection current", Semiconductors 35, (10) pp. 922-924 (2009)

  27. A. P. Dmitriev, M. E. Levinshtein, and S. L. Rumyantsev "On the Hooge relation in semiconductors and metals", J. Appl. Phys. (5 pages) 106, 024514 (2009)

  28. T T Mnatsakanov, M E Levinshtein, L I Pomortseva1 and J W Palmour "Fundamental physical limitations on the blocking voltage of SiC rectifier diodes", Semicond. Sci. Technol. (6 pages) 24, 125010 (2009)

  29. S. L. Rumyantsev, M. S. Shur, M. E. Levinshtein, A. Motayed, and A. V. Davydov "Low-frequency noise in GaN nanowire transistors", J. Appl. Phys. 103, 064501 (2008)

  30. M E Levinshtein, T T Mnatsakanov, P A Ivanov, J W Palmour, M K Das, and B A Hull "Self-Heating and Loss of Thermal Stability under a Single Current Surge Pulse in High Voltage 4H-SiC Rectifier Diodes", Sem. Sci. Techn. v. 23, N8, 085011 (2008)

  31. M. E. Levinshtein, P. A. Ivanov, T. T. Mnatsakanov, John W. Palmour, Mrinal K. Das, Brett A. Hull "Self-heating and destruction of high voltage 4H-SiC rectifier diodes under a single short current surge pulse", Solid-State Electronics v 52, 1802–1805 (2008)

  32. S. L. Rumyantsev, M. S. Shur, M. E. Levinshtein, P. A. Ivanov, J. W. Palmour, M. K. Das, and B. A. Hull "Low frequency noise in 4H-SiC metal oxide semiconductor field effect transistors"  J. Appl. Phys. 104, 094505 (2008)

  33. A P Dmitriev, M E Levinshtein, E N Kolesnikova, J W Palmour, M K Das, and B A Hull "A model of the 1/f noise in a forward-biased  p-n diode" Sem. Sci. Techn. v. 23, N1, 015011 (2008)

  34. T. T. Mnatsakanov, M. E. Levinshtein, and A. S. Freidlin " Effect of Auger Recombination on the Thermal Stability of High-Voltage High-Power Semiconductor Diodes Semiconductors, v. 42, (2) pp. 220-227 (2008)

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