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 Scientific Visits
2010 University of Oulu, Oulu, Finland. Lecture "SiC devices".
2008 University of Montpellier, Montpellier France. Joint studies in the framework of the project “Plasma wave terahertz electronics”.
2005 Rensselaer Polytechnic Institute, Troy, NY (USA) Research: :"Low Frequency Noise in GaN, GaN/GaAlN Heterojunctions, and AlGaN/GaN High Electron Mobility Field Effect Transistors".
2005 University of Oulu, Oulu, ( Finland) Presentation of the book: M. Levinshtein, J. Kostamovaara, S. Vainshtein"Breakdown Phenomena in Semiconductors and Semiconductor Devices" World Scientific Publishing Company (2005)
2005 University of Montpellier, Montpellier France Lectures Course: "Microwave semiconductor devices, principles of operation"
2004

 University of Montpellier, Montpellier France Research: “Magnetic field effect on TeraHertz emission”
2004 Rensselaer Polytechnic Institute, Troy, NY (USA) Research: "Silicon Carbide and SiC-based devices”
2003 University of Oulu, Oulu, ( Finland) Lectures Course " Breakdown Phenomena in Semiconductors and Semiconductor Devices".
2002 Rensselaer Polytechnic Institute, Troy, NY (USA)
Research: "Transport properties of 2D electron gas in GaN/GaAlN heterostructures"
2001 Rensselaer Polytechnic Institute, Troy, NY (USA)
Research:"Drift mobility of electrons in GaN/GaAlN HEMTs and MOS-HEMTs"
1999 University of Oulu, Oulu, ( Finland)
Lectures (Course, 20hours) " Breakdown Phenomena in Semiconductors and
Semiconductor Devices".
1999 NRL, Washington DC, (USA)
Lecture:"Low Frequency Noise in GaN, GaN/GaAlN Heterojunctions,
and AlGaN/GaN High Electron Mobility Field Effect Transistors".
1999 Rensselaer Polytechnic Institute, Troy, NY (USA)
Research: " Low frequency noise in GaN/GaAlN HEMTs and MOS-HEMTs".
1998 Wright Laboratory, Ohio(USA)
Lecture: " Low-frequency noise in GaN and GaN/GaAlN heterojunctions".
1998 ARL, Adelphi Maryland, (USA)
Lecture: " Main properties of SiC thyristors".
1997 Wright Laboratory, Ohio(USA)
Lecture "Nature of the volume 1/f noise in the main materials of semiconductor
electronics: Si, GaAs, and SiC".
1997 University of Montpellier, Montpellier, (France)
Lectures: " Generation-Recombination ( G-R ) noise in semiconductors".
"Low - frequency noise properties of SiC and GaN".
Research: "Low-frequency noise in GaN/GaAlN heterojunctions".
1996 University of Oulu, Oulu, ( Finland)
Research: " Breakdown phenomena and superfast modes in avalanche transistors".
1990 University of Virginia, Charlottesville, (USA)
Lecture " The origin of 1/f noise in semiconductors".
1989 Institute of Microelectronics, Stockholm, (Sweden)
Lectures: "GaAs power diodes and thyristors".

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