book02.gif (209 bytes)  Books and books' Chapters:
           (author and co-author):

  1. A. A. Lebedev, S. Yu. Davydov, P. A. Ivanov and M. E. Levinshtein, Editors:
    "Silicon Carbide and Related Materials ECSCRM-2012”
    Trans. Tech. Publications, Zurich, Switzerland, 2013
    ISSN 0255-5476 (print)

  2. Pavel A. Ivanov, Michael E. Levinshtein, Tigran T. Mnatsakanov, John W. Palmour, and Anant K. Agarwal. "Bipolar devices based on silicon carbide: physical issues" in Progress in Solid State Electronics Research, James P. Martingale, ed.. Nova Science Publishers, 2008, ISBN: 1-60021-852-0

  3. M. S. Shur, S. L. Rumyantsev and M. E. Levinshtein, Editors: "SiC Materials and Devices – vol. 2", World Scientific, 2007, ISBN 981-270-383-5

  4. M. S. Shur, S. L. Rumyantsev and M. E. Levinshtein, Editors: "SiC Materials and Devices – vol. 1", World Scientific, 2006, ISBN 981-256-835-2

  5. M. E. Levinshtein,S. L. Rumyantsev, T. T. Mnatsakanov, Anant K. Agarwal and John W. Palmour "SiC thyristors" in: "SiC Materials and Devices – vol. 1", ed. by M. S. Shur, S. L. Rumyantsev and M. E. Levisnhtein, World Scientific, 2006, ISBN 981-256-835-2

  6. M. Levinshtein, J. Kostamovaara, S. Vainshtein,"Breakdown Phenomena in Semiconductors and Semiconductor Devices", World Scientific Publishing Company Singapore - New Jersey - London - Hong Kong, 2005, ISBN: 9812563954.

  7. S. L. Rumyantsev, M. S. Shur, M. E. Levinshtein, "Materials' Properties of Nitrides. Summary" in "GaN-based materials and devices, Selected topics
    in electronics and systems    " - v.33, eds. M.S.Shur and R.F. Devis,
    World Scientific, 2004, ISBN 981-238-844-3.

  8. S. L. Rumyantsev, N. Pala, M. S. Shur, M.E. Levinshtein, R. Gaska,M. Asif Khan and
    G. Simin, "Generation-Recombination Noise in GaN-based Devices", in: "GaN-based materials and devices, Selected topics in electronics and systems" - v.33, eds. M.S.Shur and R.F. Devis, World Scientific, 2004, ISBN 981-238-844-3.

  9. M. E. Levisnhtein,"The Spirit of Russian Science", World Scientific, Singapore - New Jersey - London - Hong Kong, 2002, ISBN 981-02-4946-2.
  10. M. E. Levinshtein, A. A. Balandin, S. L. Rumyantsev, and M. S. Shur
    "Low-frequency noise in GaN-based Field Effect Transistors" in "Noise and Fluctuations Control in Electronic Devices", A. Balandin, ed., American Scientific Publishers, 2002
  11. Yu. A. Goldberg, M. Levinshtein, and S. L.Rumyantsev. Chapters 5 (Silicon Carbide) in "Properties of Advanced Semiconductor Materials: GaN, AIN, InN, BN, SiC, SiGe" John Wiley & Sons, Inc. NY-Chichester-Weinheim-Brisbane-Singapore-Toronto,
    2001, ISBN 0-471-35827-4.
  12. S. L. Rumyantsev, M.E. Levinshtein, A. D. Jackson, S. N. Mohammed, G. L. Harris, and M. G. Spencer.Chapters 4 (Boron Nitride) in: "Properties of Advanced Semiconductor Materials: GaN, AIN, InN, BN, SiC, SiGe"
    John Wiley & Sons, Inc. NY-Chichester-Weinheim-Brisbane-Singapore-Toronto,
    2001, ISBN 0-471-35827-4.
  13. V. Bougrov, M. Levinshtein, S. L.Rumyantsev, and A. Zubrilov.
    Chapters 1 (Gallium Nitride) in: "Properties of Advanced Semiconductor Materials: GaN,AIN, InN, BN, SiC, SiGe"
    John Wiley & Sons, Inc. NY-Chichester-Weinheim-Brisbane-Singapore-Toronto,
    2001, ISBN 0-471-35827-4.
  14. Transport and Optical Phenomena in Semiconductor Nanostructures
    in High Electric Fields,     by L. E. Vorobyev, S. N. Danilov, E. L. Ivchenko,
    M. E. Levinshtein, D. A. Firsov, and V. A. Shalygin, St. Petersburg, Nauka,
    2000 (in Russian).
  15. The Spirit of the Ioffe by M.E. Levinshtein
    © M. E. Levinshtein, ISBN 5-86763-005-6, St. Petersburg, 1999 (in Russian).
  16. Bipolar Transistors by M. E. Levinshtein and G. S. Simin, in Physics Encyclopedia,
    v. 5, pp. 155-156, Moscow, Russian Encyclopedia, 1999 (in Russian).
  17. Transistors. From Crystal to Integrated Circuits, by M.E.Levinshtein and G.S.Simin.
    World Scientific, Singapore - New Jersey - London - Hong Kong, 1998. M.E. Levinshtein and S.L.Rumyantsev. Chapters 1(Si) and 4 (GaAs) in:
    " Handbook Series of Semiconductors Parameters", v.1.
    World Scientific, Singapore - New Jersey - London - Hong Kong, 1996.
  18. N.V.Dyakonova, M.E.Levinshtein, "Model of bulk 1/f noise in semiconductors" in:
    " Best of Soviet Semiconductor Physics and Technology, (1989-1990)".
    World Scientific, Singapore - New Jersey - London - Hong Kong, 1995, pp. 244-249. Field Effect Transistors, by M. E. Levinshtein and G. S. Simin, in Physics Encyclopedia, v. 4, pp. 7 - 10, Moscow, Russian Encyclopedia, 1994 (in Russian). Getting to Know Semiconductors, by M.E.Levinshtein and G.S.Simin.World Scientific, 1992.
  19. S.N.Vainshtein, Yu.V.Zhilyaev, M.E.Levinshtein "Visualization of subnanosecund
    switching of gallium arsenide diode structures in:
    "Best of Soviet Semiconductor Physics and Technology, (1987-1988)",
    Series "Key Papers in Physics", American Institute of Physics, New York, 1991,
    pp. 338-339.
  20. Gunn Diode by M. E. Levinshtein in Physics Encyclopedia, v. 2, pp. 415 - 416,
    Moscow, Soviet Encyclopedia, (1988) (in Russian).
  21. Barriers,by M.E.Levinshtein and G.S.Simin. Nauka, Moscow, 1987 (in Russian).
  22. Computer Semiconductor Elements (Paper Series). Quantum, Moscow, 1985 - 1986

    23. http://kvant.mccme.ru/au/levinshtejn_m.htm
    a) M. E. Levisnhtein and G. S. Simin. "First Acquaintance". Quantum, 1985, no.9 (2562)
    b) M. E. Levisnhtein and G. S. Simin. "Field Effect Transistors". Quantum, 1985, no.10 (2563)
    c) M. E. Levisnhtein and G. S. Simin. " Bipolar Junction Transistors". Quantum, 1985, no.11 (2564)
    d) M. E. Levisnhtein and G. S. Simin. "Transistor Design in Integral Circuits (ICs)".
    Quantum, 1985, no.12 (2565)
    e) M. E. Levisnhtein and G. S. Simin. "Elementary Logical Operations". Quantum, 1986, no.1 (2566)
    f) M. E. Levisnhtein and G. S. Simin. "Transistor Logical Circuits". Quantum, 1986, no.2 (2567)
    g) M. E. Levisnhtein and G. S. Simin. "Computer Memory Element - Trigger". Quantum, 1986, no.3 (2568)
    h) M. E. Levisnhtein, G. S. Simin, and V. Sandomisrskii. "Registers" . Quantum, 1986, no.4 (2569)
    i) M. E. Levisnhtein and G. S. Simin. "Integrator". Quantum, 1986, no.5 (2570)
    j)M. E. Levisnhtein and G. S. Simin. "Conclusion: Semiconductor Elements of Next Computer Generations". Quantum, 1986, no.6 (2571)

  23. Introduction in Semiconductors, by M.E.Levinshtein and G.S.Simin. Nauka, Moscow, 1984 (in Russian).
  24. Gunn-effect, by M.E.Levinshtein, Yu.K.Pozhela, and M.S.Shur. Sov. Radio, Moscow, 1975 (in Russian).
  25. GaAs: Growth, Properties, Applications, ed. by D.N.Nasledov and F.P.Kesamanly. Nauka, Moscow, 1972 (in Russian).

 

Co-editor:

  1. M. S. Shur, S. L. Rumyantsev and M. E. Levinshtein, Editors: "SiC Materials and Devices – vol. 2", World Scientific, 2007, ISBN 981-270-383-5

  2. M. S. Shur, S. L. Rumyantsev and M. E. Levinshtein, Editors: "SiC Materials and Devices – vol. 1, World Scientific, 2006, ISBN 981-256-835-2

  3. Josef Sikula and Michael Levinshtein, Editors: "Advanced Experimental Methods for Noise Research in Nanoscale Electronic Devices" Kluwer Academic Publishers, Dordrecht – Boston – London, 2004, ISBN 1-4020-2168-2

  4. M. E. Levinshtein, S. L Rumyantsev, and M. S. Shur, Editors:"Properties of Advanced Semiconductor Materials: GaN,AIN, InN, BN, SiC, SiGe"
    John Wiley & Sons    , Inc. NY-Chichester-Weinheim-Brisbane-Singapore-Toronto, 2001.
  5. M.E.Levinshtein, S.L Rumyantsev, and M.S.Shur, Editors:
    "Handbook Series of Semiconductor Parameters, vol.2:
    Ternary and Quarternary A3B5 Compaunds, AlGaAs, GaInP, GaInAs, GaInSb,
    GaAsSb, InAsSb, GaInAsP, GaInAsSb."
    World Scientific, Singapore - New Jersey - London - Hong Kong, 1999.
  6. M.E.Levinshtein and M.S.Shur, Editors:
    "Semiconductor Technology. Processing and Novel Fabrication Techniques."
    Wiley & Sons, New York-Chichester-Weinheim-Brisbane-Singapore-Toronto, 1997.
  7. M.E.Levinshtein, S.L Rumyantsev, and M.S.Shur, Editors:
    "Handbook Series of Semiconductor Parameters, vol.1:
    Elementary Semiconductors and A3B5 Compounds, Si, Ge, C, GaAs,GaP,GaSb,
    InAs,InP,InSb."
    World Scientific, Singapore - New Jersey - London - Hong Kong, 1996.
  8. M.E.Levinshtein and V.E.Chelnokov, Editors of translation:
    M.S.Shur, "GaAs Devices and Circuits", Plenum Press, 1987.
    Translation from English into Russian, Mir, Moscow, 1991.
  9. M.E.Levinshtein and M.S.Shur, Editors:
    "Best of Soviet Semiconductor Physics and Technology, (1989-1990)".
    World Scientific, 1995.
  10. M.E.Levinshtein and M.S.Shur, Editors:
    "Best of Soviet Semiconductor Physics and Technology (1987-1988)".
    American Institute of Physics, 1991.

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