| |
Ga0.47In0.53As |
GaxIn1-xAs |
Remarks |
Referens |
| Crystal structure |
Zinc Blende |
Zinc Blende |
300 K |
|
| Group of symmetry |
Td2-F43m |
Td2-F43m |
300 K |
|
| Number of atoms in 1 cm3 |
3.98·1022 |
(3.59-0.83x)·1022 |
300 K |
|
| Bulk modulus |
6.62·1011 dyn/cm2 |
(5.81+1.72x)·1011 dyn/cm2 |
300 K |
Goldberg Yu.A. & N.M. Schmidt
(1999) |
| Debye temperature |
330 K |
(280+110x) K |
300 K |
|
| Density |
5.50 g·cm-3 |
(5.68-0.37x) g·cm-3 |
300 K |
|
| Melting point, Tm |
|
~= 1100° C |
|
|
| Specific heat |
0.3 J g-1°C -1 |
|
300 K |
|
| Thermal conductivity |
0.05 W cm-1 °C -1
|
see Temerature dependences |
|
|
| Thermal expansion coefficient, linear |
5.66x10-6 °C -1 |
see Temerature dependences |
|
|
| Dielectric constant (static) |
13.9 |
15.1-2.87x+0.67x2 |
300 K |
|
| Dielectric constant (high frequency) |
11.6 |
12.3-1.4x |
300 K |
|
| Infrared refractive index n |
3.43 cm2 V-1s-1 |
(3.51-0.16x ) V-1s-1 |
300 K |
|
| Radiative recombination coefficient |
0.96 x 10-10 cm2/s |
see Impact Ionization |
300 K |
|
Energy gaps, Eg
|
0.74 eV
|
(0.36+0.63x+0.43x2) eV
(0.4105+0.6337x+0.475x2) eV |
300 K
2 K |
Goetz et al.(1983) |
| Effective electron mass me |
0.041 mo (at n= 2·1017 cm-3) |
(0.023+0.037x+0.003x2) mo |
300 K |
Pearsall (1982) |
| Effective hole masses mh |
0.45 mo |
(0.41+0.1x) mo |
300 K |
Goldberg Yu.A. & N.M. Schmidt (1999) |
| Effective hole masses mlp |
0.052 mo |
(0.026+0.056x) mo |
300 K |
|
| Effective hole masses (split-off band) mso |
|
~= 0.15 mo |
300 K |
|
| Electron affinity |
4.5 eV |
(4.9-0.83x) eV |
300 K |
|
| Lattice constant |
5.8687 A |
(6.0583-0.405x) A |
300 K |
|
| Piezoelectric constant |
|
e14= -(0.045+0.115x) C/m2 |
300 K |
|
| Optical phonon energy |
34 meV |
see Raman-active phonon modes |
300 K |
|
