GaInAs  - Gallium Indium Arsenide

Thermal properties


Basic parameters


Ga0.47In0.53As     GaxIn1-xAs Remarks Referens
Bulk modulus 6.62·1011 dyn/cm2 (5.81+1.72x)·1011 dyn/cm2 300 K Goldberg Yu.A. & N.M. Schmidt (1999)
Debye temperature 330 K (280+110x) K    
Density 5.50 g/cm3 5.68-0.37x g/cm3 300 K Goldberg Yu.A. & N.M. Schmidt (1999)
Melting point, Tm   ~= 1100° C    
Specific heat 0.3 J g-1°C -1      
Thermal conductivity 0.05 W cm-1 °C -1
see Temerature dependences    
Thermal expansion coefficient, linear 5.66x10-6 °C -1 see Temerature dependences    
Lattice constant 5.8687 A (6.0583-0.405x) A    

Thermal conductivity

Thermal conductivity 0.05 W cm-1 °C -1
GaxIn1-xAs. Thermal resistivity vs. composition parameter x
300K
Solid lines shows the experimental data.
Dashed lines are the results theoretical calculation.
Adachi (1983)
GaxIn1-xAs. Specific heat at constant pressure vs. temperature for different concentrations x.
1 - x=0.0;
2 - x=0.2;
3 - x=0.4;
4 - x=0.6;
5 - x=0.8.
6 - x=1.0.
Sirota et al. (1982)
GaxIn1-xAs. Debye temperature vs. temperature for different concentrations x.
1 - x=0.0;
2 - x=0.2;
3 - x=0.4;
4 - x=0.6;
5 - x=0.8.
6 - x=1.0.
Sirota et al. (1982)



Lattice properties

Lattice parameters

    Remarks Referens
Lattice constant, a (6.0583-0.405x) A GaxIn1-xAs; 300K Adachi (1982)
  5.8687 A Ga0.47In0.53As; 300K, x=0.47  
       

Linear thermal expansion coefficient