Ga0.47In0.53As | GaxIn1-xAs | Remarks | Referens | |
Bulk modulus | 6.62·1011 dyn/cm2 | (5.81+1.72x)·1011 dyn/cm2 | 300 K | Goldberg Yu.A. & N.M. Schmidt (1999) |
Debye temperature | 330 K | (280+110x) K | ||
Density | 5.50 g/cm3 | 5.68-0.37x g/cm3 | 300 K | Goldberg Yu.A. & N.M. Schmidt (1999) |
Melting point, Tm | ~= 1100° C | |||
Specific heat | 0.3 J g-1°C -1 | |||
Thermal conductivity | 0.05 W cm-1 °C -1 |
see Temerature dependences | ||
Thermal expansion coefficient, linear | 5.66x10-6 °C -1 | see Temerature dependences | ||
Lattice constant | 5.8687 A | (6.0583-0.405x) A |
Thermal conductivity | 0.05 W cm-1 °C -1 |
GaxIn1-xAs. Thermal resistivity vs. composition
parameter x 300K Solid lines shows the experimental data. Dashed lines are the results theoretical calculation. Adachi (1983) |
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GaxIn1-xAs. Specific heat at constant pressure
vs. temperature for different concentrations x. 1 - x=0.0; 2 - x=0.2; 3 - x=0.4; 4 - x=0.6; 5 - x=0.8. 6 - x=1.0. Sirota et al. (1982) |
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GaxIn1-xAs. Debye temperature vs. temperature
for different concentrations x. 1 - x=0.0; 2 - x=0.2; 3 - x=0.4; 4 - x=0.6; 5 - x=0.8. 6 - x=1.0. Sirota et al. (1982) |
Remarks | Referens | ||
Lattice constant, a | (6.0583-0.405x) A | GaxIn1-xAs; 300K | Adachi (1982) |
5.8687 A | Ga0.47In0.53As; 300K, x=0.47 | ||