Department of Theoretical Bases of Microelectronics
Ioffe Physico-Technical Institute
State Prize of the Russian Federation in Science and Technology
The Rank Prize
The 1998 Rank Prize for optoelectronics
was awarded to R. A. Suris, J. Faist, F. Capasso, and R. Kazarinov for contribution to the invention
of the quantum cascade laser.
L. V. Asryan and R. A. Suris. Theory of threshold currents of semiconductor
quantum dot lasers, 1998.
V. P. Kochereshko, D. R. Yakovlev, and R. A. Suris. Exciton-electron
interactions in QW structures with 2DEG (get
V. V. Rotkin and R. A. Suris. Electron
structure modelling and investigation of interaction processes for carbon-based
A. Yu. Kaminski, and R. A. Suris.
investigation of elementary processes in the MBE growth of semiconductor
K. D. Moiseev, O. G. Ershov, M. P. Mikchailova, G. G. Zegrya, and Yu. P.
Yakovlev. Coherent emission
(on 3-4 microns) of a laser structure based on a type II broken-gap p-GaInAsSb/p-InAs
heterojunction (get pdf-file),
G. G. Zegrya, D. K. Nelson, A. N. Titkov, and P. Voisin. New
mechanisms of carrier recombination caused by interaction with sharp heteroboundaries
in semiconductor quantum structures
I. A. Merkulova, D. N. Mirlina,
M. E. Portnoi, I. I. Remshina, B. F. Sapega,
A. A. Sirenko, Photoluminescence of hot electrons and electron-hole pairs
in the heterostructures with quantum wells, 1991.
A. M. Vasil’eva, E. L. Ivchenko, P. S. Kop’ev, V. P. Kochereshko, R. A. Suris,
I. N. Uraltsev, Optical phenomena in short-period superlattices,
Prizes for the best work of the Semiconductor Heterostructures Division
G. G. Zegrya, A. N. Imenkov, M. P. Michailova, K. D. Moiseev, Yu. P. Yakovlev,
Suppression of Auger recombination in type II long-wavelength lasers, 1997.
Prizes for the best work of the Solid State Electronics Division
R. A. Suris,
N. V. Fomin, Investigation of possibilities of HTSC microwave
guide applications to microelectronics as interconnections of impedance
matching devices and time-delay circuits, 1992.
G. G. Zegrya, Theoretical investigation of temperature dependence of the
threshold current density of semiconductor heterolasers, 1992.