Our collaboration:
- Group of V.B. Shuman at the Laboratory of semiconductor devices, Ioffe Instutute, Russia
- Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, Russia
- Institute of Optical Sensor Systems, German Aerospace Center (DLR), Berlin, Germany
- Leibniz Institute for Crystal Growth, Berlin, Germany
- High Field Magnet Laboratory, Radboud University Nijmegen, Nijmegen, The Netherlands
- University of Surrey, Guildford, United Kingdom
- Simon Fraser University, Burnaby, Canada
- Cardiff University, United Kingdom
See also our research on Semiconductor-microdischarge systems
Recent Publications
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V. B. Shuman,A. N. Lodygin, L. M. Portsel, A. A. Yakovleva, N. V. Abrosimov, Yu. A. Astrov,
Decomposition of a Solid Solution of Interstitial Magnesium in Silicon,
Semiconductors 53, 296 (2019)
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R. J. S. Abraham, V. B. Shuman, L. M. Portsel, A. N. Lodygin, Yu. A. Astrov, et. al.,
Shallow donor complexes formed by pairing of double-donor magnesium with group-III acceptors in silicon,
Phys. Rev. B 99, 195207 (2019)
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K. Gwozdz, V. Kolkovsky, J. Weber, A. A. Yakovleva, Yu.A. Astrov,
Detection of Sulfur‐Related Defects in Sulfur Diffused n‐ and p‐Type Si by DLTS,
phys. status solidi a 216, 1900303 (2019)
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A. N. Lodygin, L. M. Portsel, E. V. Beregulin, and Yu. A. Astrov,
Townsend discharge in argon and nitrogen: Study of the electron distribution function,
J. Appl. Phys. 126, 173302(2019)
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N. Yarykin, V. B. Shuman, L. M. Portsel, A. N. Lodygin, Yu. A. Astrov, N. V. Abrosimov, J. Weber,
DLTS Investigation of the Energy Spectrum of Si:Mg Crystals,
Semiconductors 53, 789 (2019)
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J. Li, N. H. Le, K. L. Litvinenko, S. K. Clowes, H. Engelkamp, S. G. Pavlov, H.-W. Hübers, V. B. Shuman, L. М. Portsel, А. N. Lodygin, Yu. A. Astrov, et. al.,
Radii of Rydberg states of isolated silicon donors,
Phys. Rev. B 98, 085423 (2018)
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Yu. A. Astrov, A. N. Lodygin, L. M. Portsel, and A. A. Sitnikova,
GaAs oxidation with Townsend-discharge three-electrode microreactor,
J. Appl. Phys. 124, 103303(2018)
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R. J. S. Abraham, A. DeAbreu, K. J. Morse, V. B. Shuman, L. M. Portsel, A. N. Lodygin, Yu. A. Astrov, et. al.,
Further investigations of the deep double donor magnesium in silicon,
Phys. Rev. B 98, 045202 (2018)
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Yu.A. Astrov, V.B. Shuman, L.М. Portsel, А.N. Lodygin, S.G. Pavlov, N.V. Abrosimov, V. N. Shastin, H.-W. Hübers,
Diffusion doping of silicon by magnesium,
phys. status solidi a 214, 1700192 (2017)
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V.B. Shuman, Yu.A. Astrov, А.N. Lodygin, L.М. Portsel,
High-temperature diffusion of magnesium in dislocation-free silicon,
Semiconductors 51, 1031 (2017)
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S.G. Pavlov, N. Deßmann, A. Pohl, V.B. Shuman, L.М. Portsel, А.N. Lodygin, Yu.A. Astrov, et. al.,
Dynamics of nonequilibrium electrons on neutral center states of interstitial magnesium donors in silicon,
Phys. Rev. B 94, 075208 (2016)
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R.H. Stock, W.S. Royle, C. Hodges, Yu.A. Astrov, V.B. Shuman, L.M. Portsel, A.N. Lodygin, S.A. Lynch.,
Mid-infrared spectroscopy of sulphur and selenium donors in silicon for quantum optics,
Int. Conf. Infrared, Millim., Terahertz Waves, IRMMW-THz, IEEE Computer Society v.2016-November, 7758724 (2016)
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V.B. Shuman, L.М. Portsel. А.N. Lodygin, Yu.A. Astrov,
Formation of S2 “Quasi-molecules” in sulfur-doped silicon,
Semiconductors 49, 421 (2015)
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S. A. Lynch, R.H Stock, Yu.A Astrov, V.B. Shuman, L.M. Portsel, A.N. Lodygin.,
Infrared single photon centers in chalcogen doped silicon for quantum computing,
IEEE Int. Semicond. Laser Conf, 7 (2014)
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K.L. Litvinenko, M. Pang, Juerong Li, E. Bowyer, H. Engelkamp, V.B. Shuman, L.M. Portsel, A.N. Lodygin, Yu.A. Astrov, et. al.,
High-field impurity magneto-optics of Si:Se,
Phys. Rev. B 90, 115204 (2014)
Contact information
Yu. A. Astrov, e-mail: yuri.astrov@mail.ioffe.ru
L. M. Portsel, e-mail: leonid.portsel@mail.ioffe.ru
A. N. Lodygin, e-mail: a.lodygin@mail.ioffe.ru
Phone: +7 (812) 247 99 66
Fax: +7 (812) 247 10 17
Laboratory of nonequilibrium processes in semiconductors
Ioffe Institute, Russian Academy of Sciences
Politekhnicheskaya 26,
St.Petersburg, 194021 Russia
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