Semiconductor-microdischarge systems

Yury Astrov Head of the group,
Sci.D., Leading Researcher, ResearcherID
Leonid Portsel Ph.D., Senior Researcher, ResearcherID
Anatoly Lodygin Staff researcher, ResearcherID

See also our research on Deep centers in silicon: physics and technology

Recent Publications

  1. Yu.A. Astrov, A.N. Lodygin, L.M. Portsel,
    Comparative study of noise in low-current Townsend discharge in nitrogen and argon, Phys. Rev. E 95, 043206 (2017)
  2. Yu.A. Astrov, A.N. Lodygin, L.M. Portsel,
    Townsend discharge in nitrogen at low temperatures: enhanced noise and instability due to electrode phenomena, J. Phys. D: Appl. Phys. 49, 095202 (2016)
  3. A.N. Lodygin, Yu.A. Astrov, L.M. Portsel, E.V. Beregulin,
    Dynamics of the Townsend discharge in argon, Technical Physics 60, 660 (2015)
  4. Yu.A. Astrov, A.N. Lodygin, L.M. Portsel,
    Self-organized patterns in successive bifurcations in planar semiconductor-gas-discharge device, Phys. Rev. E 91, 032909 (2015)
  5. A book
    V.M. Marchenko, H.-G. Purwins, L.M. Portsel, Yu.A. Astrov,
    Semiconductor-Gas-Discharge Device for Fast Imaging in the Infrared: Physics, Engineering and Applications, Shaker Verlag GmbH. 176 pages, ISBN: 978-3-8440-0667-4, (2016)

Contact information

Yu. A. Astrov, e-mail:
L. M. Portsel, e-mail:
A. N. Lodygin, e-mail:

Phone: +7 (812) 247 99 66
Fax: +7 (812) 247 10 17

Laboratory of nonequilibrium processes in semiconductors
Ioffe Institute, Russian Academy of Sciences
Politekhnicheskaya 26,
St.Petersburg, 194021 Russia