Electron drift (dashed curves) and Hall (solid curves) mobility vs.
composition parameter x. T=300 K. 1, 1´ n=3·10^{15} cm^{3}; 2, 2´ n=4·10^{16} cm^{3}; 3 n=2.3·10^{17} cm^{3}. For curve 3 electron and drift mobility values are practically equal. Symbols are experimental data from several different papers. Chattopadhyay et al. (1981) 
Electron Hall mobility versus temperature for Ga_{0.47}In_{0.53}As. 300K Electron concentration n_{o}=3.5·10^{14} cm^{3} at 300K. Oliver, Jr. et al. (1981) 

Electron Hall mobility in Ga_{0.47}In_{0.53}As at 77 K for different compensation ratios:
θ=(Nd + Na )/n. 1  θ=1, 2  θ=2, 3  θ=5, 4  θ=10. Symbols represent the experimental data from several works Pearsall (1982) 

Electron Hall mobility in Ga_{0.47}In_{0.53}As at 300 K for different compensation ratios:
θ=(Nd + Na )/n. 1  θ=1, 2  θ=2, 3  θ=5, 4  θ=10. Symbols represent the experimental data from several works Pearsall (1982) 

Hall factor for ntype Ga_{0.47}In_{0.53}As (y=1) versus temperature. 1  n_{o}=10^{15} cm^{3}, 2  n_{o}=10^{17} cm^{3}. Pearsall (1982) 
µ_{p}≤500  InAs; x=0  µ_{p}≤500 
µ_{p}≤300  Ga_{0.47}In_{0.53}As; x=0.47  µ_{p}≤300 
µ_{p}≤400  GaAs; x=1  µ_{p}≤400 
Hole Hall mobility versus temperature for ntype Ga_{0.47}In_{0.53}As. Hole concentration p_{o}=5.5·10^{15} cm^{3} at T=300 K. Novak et al. (1989) 

Hole Hall mobility in Ga_{0.47}In_{0.53}As at t=77 K versus total impurity concentration Nd + Na. Pearsall and Hirtz (1981) 

Hole Hall mobility in Ga_{0.47}In_{0.53}As at t=295 K versus total impurity concentration Nd + Na. Pearsall and Hirtz (1981) 
Temperature dependence of the electron mobility µ_{n} (1) and sheet electron density n_{2DEG} (2) in
Ga_{0.47}In_{0.53}As/Al_{0.48}In_{0.52}As heterostructure. Doping density in AlInAs layer is equal to 3·10^{17} cm^{3}. T=300 K. Matsuoka et al. (1990) 

Hall electron mobilities of pseudomorphic Ga_{x}In_{1x}As/Al_{0.48}In_{0.52}As
MODFET versus indium content at two temperature. 1  77 K 2  300 K Pamulapati et al. (1990) 
µ_{n} cm^{2}/Vs  2DEG density, cm^{2}  
x  300 K  77 K  300 K  77 K 
0.25  14100  113000  1.71·10^{12}  1.65·10^{12} 
0.20  15200  123100  1.84·10^{12}  1.81·10^{12} 
0.15  15300  70700  1.84·10^{12}  1.81·10^{12} 
Electron mobility versus 2D carrier density at 300K for pseudomorphic HEMT structures AlGaAs/Ga_{x}In_{1x}As/(Al)GaAs. H homogeneously doped structures, P planar doped structures. For H115, H215, P15 and 2P15 samples x = 0.15. For P25 and 2P25 x=0.25 Gaonach et al. (1990) 
n_{2DEG} (10^{12} cm^{2})  µ_{n} (cm^{2}/V·s)  
300 K  77 K  300 K  77 K  
Sample A  4.3  2.5  3910  18400 
Sample B  8.8  6.0  2710  6540 
Sample C  6.2  4.1  4630  19100 
Sample D  2.0  1.8  5600  22000 
Hole Hall mobility (1) and 2DHG density (2) versus temperature for single strained GaAs/Ga_{0.8}In_{0.2}As/GaAs quantum well structure. Fritz et al. (1986) 

Hole Hall mobility at 76 K versus 2D carrier density for 90 A thick GaAs/Ga_{0.8}In_{0.2}As/GaAs single strained quantum well. Fritz et al. (1986) 