## Electrical properties

Basic Parameters
Mobility and Hall Effect
Two-dimensional electron and hole gas mobility in heterostructures
Transport Properties in High Electric Fields
Impact Ionization
Recombination Parameters

### Mobility and Hall Effect

 Electron drift (dashed curves) and Hall (solid curves) mobility vs. composition parameter x. T=300 K. 1, 1´ n=3·1015 cm-3; 2, 2´ n=4·1016 cm-3; 3 n=2.3·1017 cm-3. For curve 3 electron and drift mobility values are practically equal. Symbols are experimental data from several different papers. Chattopadhyay et al. (1981)

#### For weakly n- doped GaxIn1-xAs at 300 K

µn=(40-80.7x+49.2x2) cm2/V·s
 Electron Hall mobility versus temperature for Ga0.47In0.53As. 300K Electron concentration no=3.5·1014 cm-3 at 300K. Oliver, Jr. et al. (1981) Electron Hall mobility in Ga0.47In0.53As at 77 K for different compensation ratios: θ=(Nd + Na )/n. 1 - θ=1, 2 - θ=2, 3 - θ=5, 4 - θ=10. Symbols represent the experimental data from several works Pearsall (1982) Electron Hall mobility in Ga0.47In0.53As at 300 K for different compensation ratios: θ=(Nd + Na )/n. 1 - θ=1, 2 - θ=2, 3 - θ=5, 4 - θ=10. Symbols represent the experimental data from several works Pearsall (1982) Hall factor for n-type Ga0.47In0.53As (y=1) versus temperature. 1 - no=1015 cm-3, 2 - no=1017 cm-3. Pearsall (1982)

#### For weakly doped p-GaxIn1-xAs at T=300 K.

 µp≤500 InAs; x=0 µp≤500 µp≤300 Ga0.47In0.53As; x=0.47 µp≤300 µp≤400 GaAs; x=1 µp≤400

 Hole Hall mobility versus temperature for n-type Ga0.47In0.53As. Hole concentration po=5.5·1015 cm-3 at T=300 K. Novak et al. (1989) Hole Hall mobility in Ga0.47In0.53As at t=77 K versus total impurity concentration Nd + Na. Pearsall and Hirtz (1981) Hole Hall mobility in Ga0.47In0.53As at t=295 K versus total impurity concentration Nd + Na. Pearsall and Hirtz (1981)

### Two-dimensional electron and hole gas mobility in heterostructures

 Temperature dependence of the electron mobility µn (1) and sheet electron density n2DEG (2) in Ga0.47In0.53As/Al0.48In0.52As heterostructure. Doping density in AlInAs layer is equal to 3·1017 cm-3. T=300 K. Matsuoka et al. (1990) Hall electron mobilities of pseudomorphic GaxIn1-xAs/Al0.48In0.52As MODFET versus indium content at two temperature. 1 - 77 K 2 - 300 K Pamulapati et al. (1990)

#### Measured Hall data from stress compensated GaxIn1-xAs/Al0.48In0.52As modulation-doped heterostructures(Chin and Chang (1990))

 µn cm2/Vs 2DEG density, cm-2 x 300 K 77 K 300 K 77 K 0.25 14100 113000 1.71·1012 1.65·1012 0.20 15200 123100 1.84·1012 1.81·1012 0.15 15300 70700 1.84·1012 1.81·1012

 Electron mobility versus 2D carrier density at 300K for pseudomorphic HEMT structures AlGaAs/GaxIn1-xAs/(Al)GaAs. H- homogeneously doped structures, P- planar doped structures. For H1-15, H2-15, P-15 and 2P-15 samples x = 0.15. For P-25 and 2P-25 x=0.25 Gaonach et al. (1990)

#### 2DEG concentration and electron mobility of multiple (samples A,B, and C) and single (sample D) δ-doped GaAs/Ga0.75In0.25As/GaAs structures (Shieh et al. (1994)).

 n2DEG (1012 cm-2) µn (cm2/V·s) 300 K 77 K 300 K 77 K Sample A 4.3 2.5 3910 18400 Sample B 8.8 6.0 2710 6540 Sample C 6.2 4.1 4630 19100 Sample D 2.0 1.8 5600 22000

 Hole Hall mobility (1) and 2DHG density (2) versus temperature for single strained GaAs/Ga0.8In0.2As/GaAs quantum well structure. Fritz et al. (1986) Hole Hall mobility at 76 K versus 2D carrier density for 90 A -thick GaAs/Ga0.8In0.2As/GaAs single strained quantum well. Fritz et al. (1986)