Nonradiative (curves 1 and 2) and radiative (curves 3 and 4) lifetimes for Ga_{0.47}In_{0.53}As versus majority carrier density. T=300 K. Solid curves are dependences for ntype, dushed curves are dependeces for ptype. Henry et al. (1984) 

Coefficient of the bimolecular recombination as a function of temperature for Ga_{0.47}In_{0.53}As. Zielinski et al. (1986) 

Electron diffusion length in pGa_{0.47}In_{0.53}As as a function of hole concentration. Ambree et al. (1992) 
Pure ntype: 

Ref  
The longest lifetime of holes  τ_{p} ≤ 10 s  Ga_{0.47}In_{0.53}As; n_{o}~2·10^{15} cm^{3}  
Diffusion length L_{p}=(D_{p}·L_{p})^{1/2 }  L_{p}≤100 µm  Ga_{0.47}In_{0.53}As; n_{o}~2·10^{15} cm^{3}  
Surface recombination velocity  <10^{6} cm/s  
Radiative recombination coefficient  0.96·10^{10} cm^{3}/s  Ga_{0.47}In_{0.53} As; 300K  
Auger coefficient  7·10^{29} cm^{6}/s  Ga_{0.47}In_{0.53} As; 300K 