Solid curves are dependences for n-type,
dushed curves are dependeces for p-type.
Henry et al. (1984)
Zielinski et al. (1986)
Ambree et al. (1992)
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Nonradiative (curves 1 and 2) and radiative (curves 3 and 4) lifetimes for Ga0.47In0.53As versus majority carrier density. T=300 K. Solid curves are dependences for n-type, dushed curves are dependeces for p-type. Henry et al. (1984) |
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Coefficient of the bimolecular recombination as a function of temperature for Ga0.47In0.53As. Zielinski et al. (1986) |
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Electron diffusion length in p-Ga0.47In0.53As as a function of hole concentration. Ambree et al. (1992) |
Pure n-type: |
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Ref | |
| The longest lifetime of holes | τp ≤ 10 s | Ga0.47In0.53As; no~2·1015 cm-3 | |
| Diffusion length Lp=(Dp·Lp)1/2 | Lp≤100 µm | Ga0.47In0.53As; no~2·1015 cm-3 | |
| Surface recombination velocity | <106 cm/s | ||
| Radiative recombination coefficient | 0.96·10-10 cm3/s | Ga0.47In0.53 As; 300K | |
| Auger coefficient | 7·10-29 cm6/s | Ga0.47In0.53 As; 300K |
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