|Nonradiative (curves 1 and 2) and radiative (curves 3 and 4) lifetimes for Ga0.47In0.53As versus majority carrier density. T=300 K.
Solid curves are dependences for n-type,
dushed curves are dependeces for p-type.
Henry et al. (1984)
|Coefficient of the bimolecular recombination as a function of temperature for Ga0.47In0.53As.
Zielinski et al. (1986)
|Electron diffusion length in p-Ga0.47In0.53As as a function of hole concentration.
Ambree et al. (1992)
|The longest lifetime of holes||τp ≤ 10 s||Ga0.47In0.53As; no~2·1015 cm-3|
|Diffusion length Lp=(Dp·Lp)1/2||Lp≤100 µm||Ga0.47In0.53As; no~2·1015 cm-3|
|Surface recombination velocity||<106 cm/s|
|Radiative recombination coefficient||0.96·10-10 cm3/s||Ga0.47In0.53 As; 300K|
|Auger coefficient||7·10-29 cm6/s||Ga0.47In0.53 As; 300K|