GaInAsSb - Gallium Indium Arsenide Antimonide

Electrical properties

Basic Parameters
Mobility and Hall Effect
Impact Ionization

Mobility and Hall Effect

Temperature dependences of the electron Hall mobility for GaxIn1-xAsySb1-y(Te). x≈0.1.
For all samples acceptor concentration Na=5·1016 cm-3. Donor concentration (Te). Nd (cm-3):
1. - 2.5·1017,
2. - 8.5·1017,
3. - 4·1018
(Voronina et al. (1991,a)).
Temperature dependences of the Hall coefficient for GaxIn1-xAsySb1-y(Te). x≈0.1.
For all samples acceptor concentration Na=5·1016 cm-3. Donor concentration (Te). Nd (cm-3):
1. - 2.5·1017,
2. - 8.5·1017,
3. - 4·1018
(Voronina et al. (1991,a)).
Temperature dependences of the electron Hall mobility for GaxIn1-xAsySb1-y(Te). x≈0.8.
For all samples acceptor concentration Nd=5·1018 cm-3. Acceptor concentration (Mn). Na (cm-3):
1. - 4.4·1017,
2. -  6·1017,
3. - 7.8·1018
(Voronina et al. (1991,a)).
Temperature dependences of the Hall coefficient for GaxIn1-xAsySb1-y(Te). x≈0.8.
For all samples acceptor concentration Nd=5·1018 cm-3. Acceptor concentration (Mn). Na (cm-3):
1. - 4.4·1017,
2. -  6·1017,
3. - 7.8·1018
(Voronina et al. (1991,a)).
Temperature dependences of the hole Hall mobility for GaxIn1-xAsySb1-y for different dopants and different doping levels. x≈0.1.
1 - undoped Na - 4.4·1016 cm-3, Nd - 1.7·1016 cm-3;
6 - Sample doped with Cd. Na - 9·1016 cm-3, Nd - 2·1016 cm-3.
7-8 - Samples doped with Zn. N (cm-3):
      7 - Na - 4.2·1017, Nd - 2·1016,
      8 - Na - 6.2·1017, Nd - 2·1016
 2-5 - samples doped with Ge. N(cm-3):
      2 - Na - 1.9·1017, Nd - 5·1016,
      3 - Na - 6.4·1017, Nd - 2·1017,
      4 - Na - 3.4·1018, Nd - 6·1017,
      5 - Na - 1.6·1019, Nd - 2·1018,
(Voronina et al. (1991,b)).
Temperature dependences of the Hall coefficient for GaxIn1-xAsySb1-y for different dopants and different doping levels. x≈0.1.
1 - undoped Na - 4.4·1016 cm-3, Nd - 1.7·1016 cm-3;
6 - Sample doped with Cd. Na - 9·1016 cm-3, Nd - 2·1016 cm-3.
7-8 - Samples doped with Zn. N (cm-3):
      7 - Na - 4.2·1017, Nd - 2·1016,
      8 - Na - 6.2·1017, Nd - 2·1016
 2-5 - samples doped with Ge. N(cm-3):
      2 - Na - 1.9·1017, Nd - 5·1016,
      3 - Na - 6.4·1017, Nd - 2·1017,
      4 - Na - 3.4·1018, Nd - 6·1017,
      5 - Na - 1.6·1019, Nd - 2·1018,
(Voronina et al. (1991,b)).
Temperature dependences of the hole Hall mobility for GaxIn1-xAsySb1-y for different dopants and different doping levels. x≈0.8.
For all samples donor concentration Nd - 9·1018 cm-3.
Samples doped with Mn. Na (cm-3): 1. - 1.7·1018, 2. - 2.3·1018, 3. - 5·1018
(Voronina et al. (1991,a)).
Temperature dependences of the Hall coefficient for GaxIn1-xAsySb1-y for different dopants and different doping levels. x≈0.1.
For all samples donor concentration Nd - 9·1018 cm-3.
Samples doped with Mn. Na (cm-3): 1. - 1.7·1018, 2. - 2.3·1018, 3. - 5·1018
(Voronina et al. (1991,a)).

Parametrizations of the electron and hole ionization coefficients.

For electrons:
      
x y αo (cm-1) Fno (V cm-1) m
0.8 0.17 2.41·106 4.45·105 2
For holes:
      
x y βo (cm-1) Fpo (V cm-1) m
0.8 0.17 1.98·106 3.69·105 2