GaInAsSb - Gallium Indium Arsenide Antimonide

Electrical properties

Basic Parameters
Mobility and Hall Effect
Impact Ionization

Impact Ionization

Field dependences of electron (α) and hole (β) ionization coefficients for Ga0.8In0.2As0.17Sb0.83. T=230 K.
(Andreev et al. (1991)).