SiGe - Silicon Germanium

Impact Ionization


Impact Ionization

Ionization rates

Si1-xGex. No data
see also Si(x=0). Impact Ionization
    Remarks Referens
Electron ionization rates   Ge(x=1) (111)  αi = α0 x exp(-Ei /E),
where α0 = 2.72x106 1/cm, Ei = 1.1x106 V/cm
(111), 300 K Mikava et al. (1980)
see also Ge. Impact Ionization
  Ge(x=1) (100)  αi = α0 x exp(-Ei /E),
where α0 = 8.04x106 1/cm, Ei = 1.4x106 V/cm
(100), 300 K  
Hole ionization rates   Ge(x=1) (111)  βi = β0 x exp(-Ei /E),
where β0 = 1.72 x 106 1/cm, Ei = 9.37 x 105 V/cm
(111), 300 K Mikava et al. (1980)
see also Ge. Impact Ionization
  Ge(x=1) (100)  βi = β0 x exp(-Ei /E),
where β0 = 6.39 x 106 1/cm, Ei = 1.27 x 106 V/cm
(100), 300 K  


Temperature Dependence of Breakdown Voltage

Si1-xGex. No data
see also Si(x=0). Impact Ionization
see also Ge(x=1). Impact Ionization
   RemarksReferens
Temperature coefficient
of the breakdown voltage :
SiGe b=1/V (dV/dT) = x 10-4 K-1 Si1-xGex. No data