Лаборатория Оптика кристаллов и гетероструктур с экстремальной двумерностью (L2D)
English

Статьи, опубликованные в изданиях Q1 согласно WoS:

  1. D.V. Nechaev, O.A. Koshelev, V.V. Ratnikov, P.N. Brunkov, A.V. Myasoedov, A. A. Sitnikova, S.V. Ivanov, V.N. Jmerik, Effect of stoichiometric conditions and growth mode on threading dislocations filtering in AlN/c-Al2O3 templates grown by PA MBE, Superlattices and Microstructures, 138, 106368 (2020).
  2. M. V. Rzheutski, E. V. Lutsenko, A. G. Vainilovich, I. E. Svitsiankou, A. V. Nahorny, G. P. Yablonskii, V. Z. Zubialevich, S. I. Petrov, A. N. Alexeev, D. V. Nechaev, and V. N. Jmerik, Ultraviolet Stimulated Emission in AlGaN Layers Grown on Sapphire Substrates Using Ammonia and Plasma-Assisted Molecular Beam Epitaxy, Phys. Stat. Sol. A 217, 927 (2020).
  3. I. A. Eliseyev, V. Yu. Davydov, E. M. Roginskii, Yu. E. Kitaev, A. N. Smirnov, M. A. Yagovkina, D. V. Nechaev, V. N. Jmerik & M. B. Smirnov, Structural and Dynamical Properties of Short-Period GaN/AlN Superlattices: Experiment and Theory, Semiconductors 54, 170 (2020).
  4. N. Atanov, Y. Davydov, V. Glagolev, V. Tereshchenko, D. Nechaev, S. Ivanov, V. Jmerik, A Photomultiplier with an AlGaN Photocathode and Microchannel Plates for BaF2 Scintillator Detectors in Particle Physics, IEEE Transactions on Nuclear Science, 67 (7), 1760 (2020).
  5. M. Ya. Vinnichenko, A.D. Fedorov, N. Yu. Kharin, V. Yu. Panevin, D.A. Firsov, D.V. Nechaev, S.V. Ivanov, V.N. Jmerik, Near-infrared optical absorption in GaN/AlN quantum wells grown by molecular-beam epitaxy, Journal of Physics: Conference Series, 1482 (2020), 012021.
  6. S. Ivanov, T. Shubina, V. Jmerik, B. Gil, Ultraviolet Materials and Devices. Editorial, Phys. Stat. Sol. A 217 (4), 2000378, (2020).
  7. D.F. Grossi, S. Koelling, P.A. Yunin, P.M. Koenraad, G.V. Klimko, S.V. Sorokin, M.N. Drozdov, S.V. Ivanov, A.A. Toropov, and A.Y. Silov, Design and Characterization of a Sharp GaAs/Zn(Mn)Se Heterovalent Interface: A Sub-Nanometer Scale View, Nanomaterials 10(7), 1315 (2020).
  8. G.M. Minkov, O.E. Rut, A.A. Sherstobitov, S.A. Dvoretski, N.N. Mikhailov, V.A. Solov'ev, M.Yu. Chernov, S.V. Ivanov, and A.V. Germanenko, Magneto-intersubband oscillations in two-dimensional systems with an energy spectrum split due to spin-orbit interaction, Phys. Rev. B 101, 245303 (2020).
  9. M.Yu. Chernov, V.A. Solov'ev, O.S. Komkov, D.D. Firsov, A.D. Andreev, A.A. Sitnikova, and S.V. Ivanov, Effect of design and stress relaxation on structural, electronic, and luminescence properties of metamorphic InAs(Sb)/In(Ga,Al)As/GaAs mid-IR emitters with a superlattice waveguide, J. Appl. Phys. 127, 125706 (2020).
  10. S.V. Sorokin, P.S. Avdienko, I.V. Sedova, D.A. Kirilenko, V.Yu. Davydov, O.S. Komkov, D.D. Firsov, S.V. Ivanov, Molecular beam epitaxy of layered roup III metal chalcogenides on GaAs(001) substrates, Materials 13(16), 3447 (2020).
  11. O. S. Komkov, S. A. Khakhulin, D. D. Firsov, P. S. Avdienko, I. V. Sedova, S. V. Sorokin, Investigation of Built-in Electric Fields at the GaSe/GaAs Interface by Photoreflectance Spectroscopy, Semiconductors 54(10), 1198-1204 (2020).
  12. P.S. Avdienko, D.A. Kirilenko, I.V. Sedova and S.V. Sorokin, Structural properties of ZnSe/InSe/ZnSe heterostructures grown by molecular beam epitaxy on GaAs(001) substrates, Journal of Physics: Conference Series 1482, 012006 (2020).
  13. P.S. Avdienko, D. V. Kolyada, D. D. Firsov, O. S. Komkov, I. V. Sedova and S.V. Sorokin, Structural and optical properties of 2D GaTe grown by molecular beam epitaxy on GaAs (001) substrates, to be published in Journal of Physics: Conference Series, 1697, 012131 (2020).
  14. E.A. Evropeitsev, D.R. Kazanov, Y.Robin, A.N. Smirnov, I.A. Eliseyev, V.Yu. Davydov, A.A. Toropov, S. Nitta, T.V. Shubina ∧ H. Amano, State-of-the-art and prospects for intense red radiation from core-shell InGaN/GaN nanorods, Scientific Reports (Nature), 10, 19048 (2020).
  15. Dmitrii Kazanov, Maxim Rakhlin, Alexander Poshakinskiy and Tatiana Shubina, Towards Exciton-Polaritons in an Individual MoS2 Nanotube, Nanomaterials 10, 373 (2020).
  16. A. A. Toropov, E. A. Evropeitsev, M. O. Nestoklon, D. S. Smirnov, T. V. Shubina, V. Kh. Kaibyshev, G. V. Budkin, V. N. Jmerik, D. V. Nechaev, S. Rouvimov, S. V. Ivanov, and B. Gil, Strongly Confined Excitons in GaN/AlN Nanostructures with Atomically Thin GaN Layers for Efficient Light Emission in Deep-Ultraviolet, Nano Lett., 20(1), 158 (2020).
  17. A.A. Toropov, E.A. Evropeitsev, M.O. Nestoklon, D.S. Smirnov, T.V. Shubina, V.Kh. Kaibyshev, G.V. Budkin, V.N. Jmerik, D.V. Nechaev, S. Rouvimov, S.V. Ivanov, B. Gil, Strongly Confined Excitons in GaN/AlN Nanostructures with Atomically Thin GaN Layers for Efficient Light Emission in Deep-Ultraviolet, Nano Lett. 20, 1, 158-165 (2020), DOI: 10.1021/acs.nanolett.9b03517, Импакт-фактор: 12.279, Q1
  18. T.V. Shubina, W. Desrat, M. Moret, A. Tiberj, O. Briot, V.Yu. Davydov, A.V. Platonov, M.A. Semina, and B. Gil, InSe as a case between 3D and 2D layered crystals for excitons, Nature Communications 10:3479 (2019). DOI: 10.1038/s41467-019-11487-0, Импакт-фактор: 11.880, Q1
  19. H.H. Fang, B. Han, C. Robert, M.A. Semina, D. Lagarde, E. Courtade, T. Taniguchi, K. Watanabe, T. Amand, B. Urbaszek, M.M. Glazov, and X. MarieControl of the Exciton Radiative Lifetime in van der Waals Heterostructures, Phys. Rev. Lett. 123, 067401 (2019). DOI: 10.1103/PhysRevLett.123.067401, Импакт-фактор: 9.199, Q1
  20. H. Plank, M.V. Durnev, S. Candussio, J. Pernul, K.-M. Dantscher, E. Monch, A. Sandner, J. G.V. Budkin and S. A. Tarasenko,Thermal generation of shift electric current, New J. Phys. (2019), DOI:10.1088/1367-2630/ab64af, Импакт-фактор: 3.753, Q1
  21. G.V. Budkin and S. A. Tarasenko,Thermal generation of shift electric current, New J. Phys. (2019), DOI:10.1088/1367-2630/ab64af, Импакт-фактор: 3.783, Q1
  22. T.V. Shubina, M. Remskar, V.Yu. Davydov, K.G. Belyaev, A.A. Toropov, and B. Gil,Excitonic emission in van-der-Waals nanotubes of transition metal dichalcogenides, Review, Annalen der Physik 531 (6) 1800415 (2019), DOI: 10.1002/andp.201800415, Импакт-фактор: 2.538, Q1
  23. T.Q.P. Vuong, V. Lair, F.R. Lacoste, S. Halloumi, S. Coindeau, J. Thiel, T.V. Shubina, M. Pauthe, and B. Gil,Structural and optical properties of Zn1-xMgxO prepared by calcination of ZnO + Mg(OH)2 after hydro micro mechanical activation, Annalen der Physik 531 (6) 1800379 (2019), DOI: 10.1002/andp.201800379, Импакт-фактор: 2.538, Q1

Статья, опубликованная в издании Q1 согласно SJR:

  • M.M. Glazov, M.A. Semina, C. Robert, B. Urbaszek, T. Amand, and X. Marie, Intervalley polaron in atomically thin transition metal dichalcogenides, Phys. Rev. B 100, 041301(R) (2019), DOI: 10.1103/PhysRevB.100.041301, Импакт-фактор: 2.75, Q2

Статьи, опубликованные в изданиях, индексируемых WoS:

  1. E.A. Evropeitsev, Y. Robin, T.V. Shubina, S.-Y. Bae, S. Nitta, D.A. Kirilenko, V.Y. Davydov, A.N. Smirnov, A.A. Toropov, M. Kushimoto, S.V. Ivanov, and H. Amano, Narrow excitonic lines in core-shell nanorods цith InGaN/GaN quantum wells intersected by basal stacking faults, Phys. Status Solidi B 1800648 (2019). DOI: 10.1002/pssb.201800648, Импакт-фактор: 1.63, Q2
  2. K. Yu. Golenitskii, A. M. Monakhov, and V. I. Sankin, Simulation of a Terahertz Laser in the Bloch Oscillation Mode, Technical Physics Letters 44, 1150-1153 (2018). DOI:10.1134/S1063785018120428, Импакт-фактор: 0.987, Q2
  3. N. S. Averkiev, A. V. Korotchenkov, and V. A. Kosobukin, On the Theory of Plasmon-Excitons: An Estimate of the Coupling Constant and the Optical Spectrum, Semiconductors 53, No. 8, 1042-1047 (2019). DOI: 10.1134/S1063782619080050, Импакт-фактор: 0.769, Q3
  4. K. D. Moiseev, V. A. Berezovets, K. Yu. Golenitskii, and N. S. Averkiev, Band structure of a hybridized electron-hole system at a single broken-gap type II heterointerface, Low Temperature Physics 45, 153 (2019); DOI: 10.1063/1.5086404 Импакт-фактор: 0.809, Q3
  5. I.D. Avdeev and D.S. Smirnov, Hyperfine interaction in atomically thin transition metal dichalcogenides, Nanoscale Adv. (2019), DOI:10.1039/c8na00360b

На данном этапе были также оформлены две заявки о выдаче патента Российской Федерации на изобретение:

  • № 2019139648 и № 2019139646
  1. В.Н. Жмерик, Д.В. Нечаев А.Н. Семенов, С.В. Иванов, С.И. Трошков Д.А. Кириленко, Способ изготовления наноколончатой гетероструктуры на основе соединений III-N, заявка от 05.12.2-19, Входящий № 078012, Регистрационный № 2019139648, дата постановки на государственный учет 15.12.2019, Номер государственного учета РИД: AAAA-A19-619121590004-0
  2. С.В. Сорокин, П.С. Авдиенко, Т.В. Шубина, Устройство для получения поляризованного света на основе ориентированного массива нанопластинок GaSe/GaAs, заявка от 05.12.2-19, Входящий № 078010, Регистрационный № 2019139646, дата постановки на государственный учет 17.12.2019, Номер государственного учета РИД: AAAA-r19-619121790061-1

Статьи 2018 г.:

  1. A.V. Poshakinskiy, D.R. Kazanov, T.V. Shubina, S.A. Tarasenko, Optical activity in chiral stacks of 2D semiconductors, Nanophotonics 7, 753-762 (2018). DOI: 10.1515/nanoph-2017-0114. Импакт-фактор: 5.686.
  2. Thi Huong Ngo, Bernard Gil, Tatiana V. Shubina, Benjamin Damilano, Stephane Vezian, Pierre Valvin and Jean Massies, Enhanced excitonic emission efficiency in porous GaN, Scientific Reports 8, 15767 (2018) DOI:10.1038/s41598-018-34185-1, Импакт-фактор: 4.644.
  3. Y. Robin, S.Y. Bae, T.V. Shubina, M. Pristovsek, E.A. Evropeitsev, D.A. Kirilenko, V.Yu. Davydov, A.N. Smirnov, A.A. Toropov, V.N. Jmerik, M. Kushimoto, S. Nitta, S.V. Ivanov, and H. Amano, Insight into the performance of multi-color InGaN/GaN nanorod light emitting diodes, Scientific Reports (Nature) 8, 7311 (2018). DOI:10.1038/s41598-018-25473-x, Импакт-фактор: 4.644.
  4. D. R. Kazanov, A. V. Poshakinskiy, V. Yu. Davydov, A. N. Smirnov, I. A. Eliseyev, D. A. Kirilenko, M. Rem_skar, S. Fathipour, A. Mintairov, A. Seabaugh, B. Gil, and T. V. Shubina, Multiwall MoS2 tubes as optical resonators, Applied Physics Letters 113, 101106 (2018); https://doi.org/10.1063/1.5047792. Импакт-фактор: 3.307.
  5. R. J. Jimenez-Rioboo, L. Artus, R. Cusco, T. Taniguchi, G. Cassabois, B. Gil, In- and out-of-plane longitudinal acoustic-wave velocities and elastic moduli in h-BN from Brillouin scattering measurements, Applied Physics Letters 112, 051905 (2018). DOI: 10.1063/1.5019629. Импакт-фактор: 3.307.
  6. F. Passmann, S. Anghel, T. Tischler, A. V. Poshakinskiy, S. A. Tarasenko, G. Karczewski, T. Wojtowicz, A. D. Bristow, and M. Betz, Persistent Spin Helix Manipulation by Optical Doping of a CdTe Quantum Well, Physical Review B 97, 201413 R, DOI: 10.1103/PhysRevB.97.201413. Импакт-фактор: 3.612.
  7. S. Anghel, F. Passmann, A. Singh, C. Ruppert, A. V. Poshakinskiy, S. A. Tarasenko, J. N. Moore, G. Yusa, T. Mano, T. Noda, X. Li, A. D. Bristow, and M. Betz, Field control of anisotropic spin transport and spin helix dynamics in a modulation-doped GaAs quantum well, Physical Review B 97, 125410 (2018). DOI: 10.1103/PhysRevB.97.125410. Импакт-фактор: 3.612.
  8. S. Shree, M. Semina, C. Robert, B. Han, T. Amand, A. Balocchi, M. Manca, E. Courtade, X. Marie, T. Taniguchi, K. Watanabe, M. M. Glazov, and B. Urbaszek, Observation of exciton-phonon coupling in MoSe2 monolayers, Physical Review B 98, 035302 (2018), DOI: 10.1103/PhysRevB.98.035302. Импакт-фактор: 3.612.
  9. Ramon Cusco, Luis Artus, James H. Edgar, Song Liu, Guillaume Cassabois, and Bernard Gil, Isotopic effects on phonon anharmonicity in layered van derWaals crystals: Isotopically pure hexagonal boron nitride, Physical Review B 97, 125410 (2018). DOI: 10.1103/PhysRevB.97.155435. Импакт-фактор: 3.612.
  10. W. Desrat, M. Moret, O. Briot, T.-H. Ngo, B. A. Piot, B. Jabakhanji, and B. Gil, Superconducting Ga/GaSe layers grown by van der Waals epitaxy, Material Research Express 5, 045901 (2018). DOI: 10.1088/2053-1591/aab8c5. Импакт-фактор: 1.149.
  11. C. Robert, M. A. Semina, F. Cadiz, M. Manca, E. Courtade, T. Taniguchi, K. Watanabe, H. Cai, S. Tongay, B. Lassagne, P. Renucci, T. Amand, X. Marie, M. M. Glazov, and B. Urbaszek, Optical spectroscopy of excited exciton states in MoS2 monolayers in van derWaals heterostructures, Physical Review Materials 2, 011001(R) (2018).
  12. A.Segura, L. Artus, R. Cusco, T. Taniguchi, G. Cassabois, and B. Gil, Natural optical anisotropy of h-BN: Highest giant birefringence in a bulk crystal through the mid-infrared to ultraviolet ranges, Physical Review Materials 2, 024001 (2018), DOI: 10.1103/PhysRevMaterials.2.024001.
  13. К.Ю. Голеницкий, А.М. Монахов, В.И. Санкин, Расчет терагерцевого лазера в режиме блоховских осцилляций, Письма в ЖТФ 44, 67 (2018), DOI: 10.21883/PJTF.2018.24.47032.17493. Импакт-фактор: 0.841
  14. T.Q.P. Vuong, S. Liu, A. Van der Lee, R. Cusco, L. Artus, T. Michel, P. Valvin, J.H. Edgar, G. Cassabois, B. Gil, Isotope engineering of van der Waals interactions in hexagonal boron nitride, Nature Materials (2017), DOI:10.1038/nmat5048, ISSN:1476-1122, Impact Factor 39.737 (Q1).

Статьи 2017 г.:

  1. T.A. Komissarova, E. Kampert, J. Law, V.N. Jmerik, P. Paturi, X. Wang, A. Yoshikawa, and S.V. Ivanov, Electrical properties of surface and interface layers of the N- and In-polar undoped and Mg-doped InN layers grown by PA MBE, Applied Physical Letters 112, 022104 (2018), DOI:10.1063/1.5009794, Impact Factor 3.41 (Q1).
  2. D.S. Smirnov, T.V. Shubina, K.G. Belyaev, D.A. Kirilenko, M.O. Nestoklon, M.V. Rakhlin, A.A. Toropov, I.V. Sedova, S.V. Sorokin, S.V. Ivanov, B. Gil, Exciton Bound to 1D Intersections of Stacking Fault Planes with a ZnSe Quantum Well, physica status solidi (RRL) - Rapid Research Letters 1700410 (2018), DOI:10.1002/pssr.201700410, Impact Factor 3.032 (Q1).
  3. Thi Huong Ngo, Bernard Gil, Benjamin Damilano, Pierre Valvin, Aimeric Courville, and Philippe de Mierry, Photo-induced droop in blue to red light emitting InGaN/GaN single quantum wells structures, Journal of Applied Physics 122, 063103 (2017); DOI:10.1063/1.4997608, Impact Factor 2.068 (Q2).
  4. D.R. Kazanov, A.V. Poshakinskiy, T.V. Shubina, Resonant photonic crystals based on van der Waals heterostructures for effective light pulse retardation, Superlattices and Microstructures 112, 639-643 (2017), DOI:10.1016/j.spmi.2017.10.021, Impact Factor 2.02 (Q2).
  5. T.H. Ngo, N. Chery, P. Valvin, A. Courville, P. de Mierry, B. Damilano, P. Ruterana, B. Gil, Internal quantum efficiency in polar and semipolar (11-22) InxGa1-xN/InyGa1-yN quantum wells emitting from blue to red, Superlattices and Microstructures 113, 129-134 (2017), DOI:10.1016/j.spmi.2017.10.030, Impact Factor 2.02(Q2).
  6. D.R. Kazanov, A.V. Poshakinskiy, S.V. Sorokin, and T.V. Shubina, Light propagation through conventional and extreme-2D van-der-Waals resonant photonic crystals, Journal of Physics: Conference Series 917, 062022 (2017), DOI:10.1088/1742-6596/917/6/062022.
  7. E.A. Evropeytsev, V.N. Jmerik, D.V. Nechaev, S. Rouvimov, T.V. Shubina, V.Kh. Kaibyshev, G. Pozina, S.V. Ivanov, and A.A. Toropov, Coexistence of type-I and type-II band line-ups in 1-2 monolayer thick GaN/AlN single quantum wells, Journal of Physics: Conference Series 917, 062050 (2017), DOI:10.1088/1742-6596/917/6/062050.
  8. Т.В. Шубина, Д.Р. Казанов, А.В. Пошакинский, С.В. Сорокин, B. Gil, Замедление света резонансными фотонными кристаллами и брэгговскими ван-дер-ваальсовыми гетероструктурами, Труды XXI Межд. Симп. "Нанофизика и наноэлектроника", Нижний Новгород, Россия, 13-16 марта, 778-779 (2017).
  9. D.R. Kazanov, A.V. Poshakinskiy, T.V. Shubina, and S.A. Tarasenko, Optical activity of chiral van der Waals stacks, Proc. 25 Int. Symp. "Nanostructures: Physics and Technology" Saint-Petersburg, Russia, June 26 - July 1, 200-201 (2017).
  10. Thi Huong Ngo, Bernard Gil, Benjamin Damilano, Pierre Valvin, Aimeric Courville, and Philippe de Mierry, Photo-induced droop in blue to red light emitting InGaN/GaN single quantum wells structures, Journal of Applied Physics 122, 063103 (2017), DOI:10.1063/1.4997608, Impact Factor 2.176 (Q2).