Group was established at Ioffe Physico-Technical institute in 1992. Activity: molecular beam epitaxy and investigation of InGaAlAs heterostructure materials grown on GaAs, Si and InP substrates. Research areas: Growth of (In, Al, Ga)As Heterostructures on GaAs and InP substrates Si/Ge heterostuctures growth (In, Al)GaAs/(In)GaAs HEMTs and PHEMTs on InP and GaAs substrates InGaAs/InAlAs and GaAs/AlGaAs superlattice (SL) InGaAs/AlGaAs Quantum Well (QW) and Quantum Dot (QD) diode lasers InGaAs/AlGaAs QD Vertical Cavity Surface Emitting Laser (VCSEL) GaAs/AlGaAs Distribute Bragg Reflectors (DBR) MBE-I Groups staff: Prof. Victor M. Ustinov - leader Prof. Vladimir G. Dubrovskii Dr. Anton Yu. Egorov Prof. Alexei E. Zhukov Dr. Alexei R. Kovsh Dr. Nikolai A. Maleev Dr. Vladimir V. Mamutin Dr. Daniil A. Livshits Dr. Sergei S. Mikhrin Mr. Alexander Kuzmenkov Ph.D. student Alexei P. Vasil'ev Ph.D. student Ekaterina V. Nikitina Ph.D. student Elizaveta S. Semenova student Vladimir Odnobludov Mr. Alexei B. Erin - technician Mr. V. V. Kislinskii - technician MBE-II Groups staff: Prof. Georgii E. Cirlin NK Polyakov VA Egorov Mr. Yurii B. Samsonenko Ph.D. student A.A.Tonkikh Mr. Dmitrii V. Denisov Equipment: RIBER 32P - MBE system EP1203 - 2 MBE systems Supra