2003

High-power (200 mW) singlemode operation of InGaAsN/GaAs ridge waveguide lasers with wavelength around 1.3 µm
A. R. Kovsh, J. S. Wang, R. S. Hsiao, L. P. Chen, D. A. Livshits, G Lin, V. M. Ustinov, J. Y. Chi
Electronics Lett. Vol 39, Iss 24, pp 1726-1728
Room-temperature 1.5-1.6 µm photoluminescence from InGaAs/GaAs heterostructures grown at low substrate temperature
A. A. Tonkikh, G. E. Tsyrlin, V. G. Talalaev, B. V. Novikov, V. A. Egorov, N. K. Polyakov, Yu. B. Samsonenko, V. M. Ustinov, N. D. Zakharov, P. Werner
Semiconductors Vol 37, Iss 12, pp 1406-1410
Lasing at 1.5 µm in quantum dot structures on GaAs substrates
A. E. Zhukov, A. P. Vasil'ev, A. R. Kovsh, S. S. Mikhrin, E. S. Semenova, A. Yu. Egorov, V. A. Odnoblyudov, N. A. Maleev, E. V. Nikitina, N. V. Kryjanovskaya, A. G. Gladyshev, Yu. M. Shernyakov, M. V. Maximov, N. N. Ledentsov, V. M. Ustinov, Zh. I. Alferov
Semiconductors Vol 37, Iss 12, pp 1411-1413
Molecular-beam epitaxy and properties of heterostructures with InAs nanoclusters in an Si matrix
D. V. Denisov, I. T. Serenkov, V. I. Sakharov, G. E. Cirlin, V. M. Ustinov
Physics of the Solid State Vol 45, Iss 11, pp 2194-2202
Inherent nature of localized states in highly planar monolayer InAs/GaAsN pseudo-alloys
I. L. Krestnikov, R. Heitz, N. N. Ledentsov, A. Hoffmann, A. M. Mintairov, T. H. Kosel, J. L. Merz, I. P. Soshnikov, V. M. Ustinov
Appl. Phys. Lett. Vol 83, Iss 18, pp 3728-3730
Optical properties of MBE-Grown ultrathin GaAsN insertions in GaAs matrix
N. V Kryzhanovskaya, A. G. Gladyshev, A. R. Kovsh, I. P. Soshnikov, A. F. Tsatsul'nikov, H. Kirmse, W. Neumann, J. Y. Chi, J. S. Wang, L. Wei, N. N. Ledentsov, V. M. Ustinov
Semiconductors Vol 37, Iss 11, pp 1326-1330
Design and technology of vertical-cavity surface-emitting lasers with nonconducting epitaxial mirrors
N. A. Maleev, A. R. Kovsh, A. E. Zhukov, A. P. Vasil'ev, S. S. Mikhrin, A. G. Kuz'menkov, D. A. Bedarev, Yu M. Zadiranov, M M. Kulagina, Yu. M. Shernyakov, A S. Shulenkov, V. A. Bykovskii, Yu. M. Solov'ev, C. Moller, N. N. Ledentsov, V. M. Ustinov
Semiconductors Vol 37, Iss 10, pp 1234-1238
Temperature characteristics of low-threshold high-efficiency quantum-dot lasers with the emission wavelength from 1.25 to 1.29 µm
Novikov II; M. V. Maksimov, Yu. M. Shernyakov, Gordeev NY; A. R. Kovsh, A. E. Zhukov, S. S. Mikhrin, N. A. Maleev, A. P. Vasil'ev, V. M. Ustinov, Zh. I. Alferov, N. N. Ledentsov, D. Bimberg
Semiconductors Vol 37, Iss 10, pp 1239-1242
Temperature variation of the morphology of nanocluster ensembles in the Ge/Si(100) system
V G. Dubrovskii, V. M. Ustinov, A. A. Tonkikh, V. A. Egorov, G E. Cirlin, P. Werner
Technical Physics Letters Vol 29, Iss 9, pp 721-724
The effect of postgrowth annealing on the structure and optical properties of multilayer Ge/Si heterostructures
A. A. Tonkikh, V. G. Talalaev, N. D. Zakharov, G E. Cirlin, V. M. Ustinov, P. Werner
Technical Physics Letters Vol 29, Iss 9, pp 739-742
Kinetics of the initial stage of coherent island formation in heteroepitaxial systems
V G. Dubrovskii, G E. Cirlin, V. M. Ustinov
Phys. Rev. B Vol 68, Iss 7, pp art. no.-075409
Metamorphic modulation-doped InAlAs/InGaAs/InAlAs heterostructures with high electron mobility grown on GaAs substrates
E. S. Semenova, A. E. Zhukov, A. P. Vasil'ev, S. S. Mikhrin, A. R. Kovsh, V. M. Ustinov, Yu G. Musikhin, S A. Blokhin, A. G. Gladyshev, N. N. Ledentsov
Semiconductors Vol 37, Iss 9, pp 1104-1106
Metamorphic lasers for 1.3-µm spectral range grown on GaAs substrates by MBE
A. E. Zhukov, A. R. Kovsh, S. S. Mikhrin, E. S. Semenova, N. A. Maleev, A. P. Vasil'ev, E. V. Nikitina, N. V Kryzhanovskaya, A. G. Gladyshev, Yu. M. Shernyakov, Yu G. Musikhin, M. V. Maksimov, N. N. Ledentsov, V. M. Ustinov, Zh. I. Alferov
Semiconductors Vol 37, Iss 9, pp 1119-1122
Output power and its limitation in ridge-waveguide 1.3 µm wavelength quantum-dot lasers
A. E. Zhukov, A. R. Kovsh, D. A. Livshits, V. M. Ustinov, Zh. I. Alferov
Semicond. Sci. Technol. Vol 18, Iss 8, pp 774-781
Quantum dots in InAs layers of subcritical thickness on GaAs(100)
A. A. Tonkikh, G E. Cirlin, V G. Dubrovskii, Yu. B. Samsonenko, N. K. Polyakov, V. A. Egorov, A. G. Gladyshev, N. V Kryzhanovskaya, V. M. Ustinov
Technical Physics Letters Vol 29, Iss 8, pp 691-693
Theoretical and experimental study of the effect of InAs growth rate on the properties of QD arrays in InAs/GaAs system
V G. Dubrovskii, V. A. Egorov, G E. Cirlin, N. K. Polyakov, Yu. B. Samsonenko, N. V Kryzhanovskaya, A. F. Tsatsul'nikov, V. M. Ustinov
Semiconductors Vol 37, Iss 7, pp 855-860
High power lasers based on submonolayer InAs-GaAs quantum dots and InGaAs quantum wells
A. R. Kovsh, A. E. Zhukov, N. A. Maleev, S. S. Mikhrin, D. A. Livshits, Yu. M. Shernyakov, M. V. Maximov, N. A. Pihtin, I. S. Tarasov, V. M. Ustinov, Zh. I. Alferov, J. S. Wang, L. Wei, G Lin, J. Y. Chi, N. N. Ledentsov, D. Bimberg
Microelectronics Journal Vol 34, Iss 5-8, pp 491-493
Longwave generation in laser structures based on InGaAs(N) quantum wells on GaAs substrates
V. A. Odnoblyudov, A. Yu. Egorov, A. R. Kovsh, V. V Mamutin, E. V. Nikitina, Yu. M. Shernyakov, M. V. Maksimov, V. M. Ustinov
Technical Physics Letters Vol 29, Iss 5, pp 433-434
Nanostructures formed by sub- and close-to-critical Ge inclusions in a Si matrix
G E. Cirlin, V. G. Talalaev, V. A. Egorov, N. D. Zakharov, P. Werner, N. N. Ledentsov, V. M. Ustinov
Physica E: Low-dimensional Systems and Nanostructures Vol 17, Iss 1-4, pp 131-133
High external differential efficiency and high optical gain of long-wavelength quantum dot diode laser
A. E. Zhukov, A. R. Kovsh, S. S. Mikhrin, A. P. Vasil'ev, E. S. Semenova, N. A. Maleev, V. M. Ustinov, M M. Kulagina, E. V. Nikitina, I. P. Soshnikov, Yu. M. Shernyakov, D. A. Livshits, N. V. Kryjanovskaya, D. S. Sizov, M. V. Maximov, A. F. Tsatsul'nikov, N. N. Ledentsov, D. Bimberg, Zh. I. Alferov
Physica E: Low-dimensional Systems and Nanostructures Vol 17, Iss 1-4, pp 589-592
Structural and optical properties of InAs quantum dots in AlGaAs matrix
D. S. Sizov, Yu. B. Samsonenko, G. E. Tsyrlin, N. K. Polyakov, V. A. Egorov, A. A. Tonkikh, A. E. Zhukov, S. S. Mikhrin, A. P. Vasil'ev, Yu G. Musikhin, A. F. Tsatsul'nikov, V. M. Ustinov, N. N. Ledentsov
Semiconductors Vol 37, Iss 5, pp 559-563
Mechanism of germanium nanoinclusions formation in a silicon matrix during submonolayer MBE
G E. Cirlin, N. D. Zakharov, V. A. Egorov, P. Werner, V. M. Ustinov, N. N. Ledentsov
Thin Solid Films Vol 428, Iss 1-2, pp 156-159
InAs/InGaAsN quantum dots emitting at 1.55 µm grown by molecular beam epitaxy
V. M. Ustinov, A. Yu. Egorov, V. A. Odnoblyudov, N. V Kryzhanovskaya, Yu G. Musikhin, A. F. Tsatsul'nikov, Zh. I. Alferov
Journal of Crystal Growth Vol 251, Iss 1-4, pp 388-391
Valence band structure of GaAsN compounds and band-edge lineup in GaAs/GaAsN/InGaAs heterostructures
A. Yu. Egorov, Odnobludov VA; V. V Mamutin, A. E. Zhukov, A. F. Tsatsul'nikov, N. V Kryzhanovskaya, V. M. Ustinov, Y. G. Hong, C. W. Tu
Journal of Crystal Growth Vol 251, Iss 1-4, pp 417-421
InAs/InGaAs/GaAs quantum dot lasers of 1.3 µm range with enhanced optical gain
A. R. Kovsh, N. A. Maleev, A. E. Zhukov, S. S. Mikhrin, A. P. Vasil'ev, Semenova EA; Yu. M. Shernyakov, M. V. Maximov, D. A. Livshits, V. M. Ustinov, N. N. Ledentsov, D. Bimberg, Zh. I. Alferov
Journal of Crystal Growth Vol 251, Iss 1-4, pp 729-736
Loss multiplication in a quantum dot laser
A. E. Zhukov, A. R. Kovsh, V. M. Ustinov, Zh. I. Alferov
Laser Physics Vol 13, Iss 3, pp 319-323
Temperature dependence of the quantum dot lateral size in the Ge/Si(100) system
A. A. Tonkikh, V G. Dubrovskii, G E. Cirlin, V. A. Egorov, V. M. Ustinov, P. Werner
Phys. Stat. Sol. (b) Vol 236, Iss 1, pp R1-R3
Optical properties of structures with ultradense arrays of Ge QDs in an Si matrix
A. G. Makarov, N. N. Ledentsov, A. F. Tsatsul'nikov, G E. Cirlin, V. A. Egorov, V. M. Ustinov, N. D. Zakharov, P. Werner
Semiconductors Vol 37, Iss 2, pp 210-214
Long-term stability of long-wavelength (> 1.25 µm) quantum-dot lasers fabricated on GaAs substrates
Lundina EY; Yu. M. Shernyakov, M. V. Maksimov,I. N. Kayander, A. F. Tsatsul'nikov, N. N. Ledentsov, A. E. Zhukov, N. A. Maleev, S. S. Mikhrin, V. M. Ustinov, Zh. I. Alferov, D. Bimberg
Technical Physics Vol 48, Iss 1, pp 131-132
Narrow vertical beam divergence laser diode based on longitudinal photonic band crystal waveguide
M. V. Maximov, Yu. M. Shernyakov,I. I. Novikov, V. A. Shchukin, I. Shamid , N. N. Ledentsov
Electronics Lett Vol 39, Iss 24, pp 1729-1731
Growth of self-organized quantum dots for optoelectronics applications: nanostructures, nanoepitaxy, defect engineering
N. N. Ledentsov, D. Bimberg
Journal of Crystal Growth Vol 255, Iss 1-2, pp 68-80

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2002

Edge-emitting InGaAs/GaAs lasers with deeply etched semiconductor/air distributed Bragg reflector mirrors
M. V. Maximov, E. M. Ramushina, V. I. Skopina, E. M. Tanklevskaya, V. A. Solov'ev, Yu. M. Shernyakov, I. N. Kaiander, M. A. Kaliteevski, S. A. Gurevich, N. N. Ledentsov, V. M. Ustinov, Zh. I. Alferov, C. M. S. Torres, D. Bimberg
Semiconductor Science and Technology Vol 17, Iss 11, pp L69-L71
Band-edge line-up in GaAs/GaAsN/InGaAs heterostructures
A. Yu. Egorov, V. A. Odnoblyudov, N. V. Kryzhanovskaya, V. V. Mamutin, V. M. Ustinov
Semiconductors, Vol 36, Iss 12, pp 1355-1359
Room-temperature photoluminescence at 1.55 µm from heterostructures with InAs/InGaAsN quantum dots on GaAs substrates
V. A. Odnoblyudov, A. Yu. Egorov, N. V. Kryzhanovskaya, A. G. Gladyshev, V. V. Mamutin, A. F. Tsatsul'nikov, V. M. Ustinov
Technical Physics Letters, Vol 28, Iss 11, pp 964-966
Quantum dot origin of luminescence in InGaN-GaN structures
I. L. Krestnikov, N. N. Ledentsov, A. Hoffmann, D. Bimberg, A. V. Sakharov, W. V. Lundin, A. F. Tsatsul'nikov, A. S. Usikov, Zh. I. Alferov, Yu. G. Musikhin, D. Gerthsen
Phys. Rev. B, , Vol 66, Iss 15, pp art. no.-155310
High efficiency (eta(D) > 80%) long wavelength (lambda > 1.25 µm) quantum dot diode lasers on GaAs substrates
S. S. Mikhrin, A. E. Zhukov, A. R. Kovsh, N. A. Maleev, A. P. Vasil'ev, E. S. Semenova, V. M. Ustinov, M. M. Kalugina, E. V. Nikitina, I. P. Soshnikov, Yu. M. Shernyakov, D. A. Livshits, N. V. Kryzhanovskaya, D. S. Sizov, M. V. Maximov, A. F. Tsatsul'nikov, N. N. Ledentsov, D. Bimberg, Zh. I. Alferov
Semiconductors, Vol 36, Iss 11, pp 1315-1321
InAs/InGaAs/GaAs quantum dot lasers of 1.3 µm range with high (88%) differential efficiency
A. R. Kovsh, N. A. Maleev, A. E. Zhukov, S. S. Mikhrin, A. P. Vasil'ev, Yu. M. Shernyakov, M. V. Maximov, D. A. Livshits, V. M. Ustinov, Zh. I. Alferov, N. N. Ledentsov, D. Bimberg
Electronics Lett ., , Vol 38, Iss 19, pp 1104-1106
Long-wavelength quantum-dot lasers
M. Grundmann, N. N. Ledentsov, F. Hopfer, F. Heinrichsdorff, F. Guffarth, D. Bimberg, V. M. Ustinov, A. E. Zhukov, A. R. Kovsh, M. V. Maximov, Yu. G. Musikhin, Zh. I. Alferov, J. A Lott, N. D. Zhakharov, P. Werner
Journal of Materials Science: Materials in Electronics, Vol 13, Iss 11, pp 643-647
Quantum dots for VCSEL applications at lambda=1.3 µm
N. Ledentsov, D. Bimberg, V. M. Ustinov, Zh. I. Alferov, J. A Lott
Physica E, Vol 13, Iss 2-4, pp 871-875
Experimental observation of splitting of the light and heavy hole bands in elastically strained GaAsN
A. Yu. Egorov, E. S. Semenova, V. M. Ustinov, Y. G. Hong, C. Tu
Semiconductors, Vol 36, Iss 9, pp 981-984
Effect of carrier localization on the optical properties of MBE-grown GaAsN/GaAs heterostructures
B. V. Volovik, N. V. Kryzhanovskaya, D. S. Sizov, A. R. Kovsh, A. F. Tsatsul'nikov, J. Y. Chi, J. S. Wang, L. Wei, V. M. Ustinov
Semiconductors, Vol 36, Iss 9, pp 997-1000
Stark effect in vertically coupled quantum dots in InAs-GaAs heterostructures
M. M. Sobolev, V. M. Ustinov, A. E. Zhukov, Yu. G. Musikhin, N. N. Ledentsov
Semiconductors, Vol 36, Iss 9, pp 1013-1019
The influence of heat treatment conditions on the evaporation of defect regions in structures with InGaAs quantum dots in the GaAs matrix
D. S. Sizov, M. V. Maximov, A. F. Tsatsul'nikov, N. A. Cherkashin, N. V. Kryzhanovskaya, A. E. Zhukov, N. A. Maleev, S. S. Mikhrin, A. P. Vasil'ev, R. Selin, V. M. Ustinov, N. N. Ledentsov, D. Bimberg, Zh. I. Alferov
Semiconductors, Vol 36, Iss 9, pp 1020-1026
Wavelength of emission from InGaAsN quantum wells as a function of composition of the quaternary compound
A. E. Zhukov, A. R. Kovsh, E. S. Semenova, V. M. Ustinov, L. Wei, J. S. Wang, L. Y. Chi
Semiconductors, Vol 36, Iss 8, pp 899-902
Time-resolved studies of InGaN/GaN quantum dots
I. L. Krestnikov, A. V. Sakharov, W. V. Lundin, A. S. Usikov, A. F. Tsatsul'nikov, Yu. G. Musikhin, D. Gerthsen, N. N. Ledentsov, A. Hoffmann, D. Bimberg
Phys. Stat. Sol. A, Vol 192, Iss 1, pp 49-53
Self-organized InGaAs quantum dots for advanced applications in optoelectronics
N. N. Ledentsov, D. Bimberg, V. M. Ustinov, Zh. I. Alferov, J. A Lott
Jap. J. Appl. Phys. , Vol 41, Iss 2B, pp 949-952
Molecular beam epitaxy of (Al)GaAsN using ammonia as a source of nitrogen
V. A. Odnoblyudov, A. R. Kovsh, A. E. Zhukov, A. Yu. Egorov, N. A. Maleev, S. S. Mikhrin, V. M. Ustinov
Technical Physics Letters, Vol 28, Iss 6, pp 517-520
Molecular beam epitaxy growth of GaAsN layers with high luminescence efficiency
A. R. Kovsh, J. S. Wang, L. Wei, R. S. Shiao, J. Y. Chi, B. V. Volovik, A. F. Tsatsul'nikov, V. M. Ustinov
Journal of Vacuum Science & Technology, Vol 20, Iss 3, pp 1158-1162
Photoluminescence in the 1.55 µm wavelength range in the InGaAs/GaAs system with quantum dots and wells
A. A. Tonkikh, V. A. Egorov, N. K. Polyakov, G. E. Cirlin, N. V. Kryzhanovskaya, D. S. Sizov, V. M. Ustinov
Technical Physics Letters, Vol 28, Iss 5, pp 434-436
Submonolayer Ge and InAs inclusions in a silicon matrix
G. E. Cirlin, V. A. Egorov, N. K. Polyakov, B. V. Volovik, A. F. Tsatsul'nikov, V. M. Ustinov, N. N. Ledentsov, Zh. I. Alferov, N. D. Zakharov, P. Werner, U. Gosele, H. Karl, A. Wenzel, B. Stritzker, R. Claessen, V. Strocov
Izvestiya Akademii Nauk Seriya Fizicheskaya, Vol 66, Iss 2, pp 165-168
Influence of metalorganic chemical vapor deposition growth conditions on In-rich nanoislands formation in InGaN/GaN structures
Yu. G. Musikhin, D. Gerthsen, D. A. Bedarev, N. A. Bert, W. V. Lundin, A. F. Tsatsul'nikov, A. V. Sakharov, A. S. Usikov, Zh. I. Alferov, I. L. Krestnikov, N. N. Ledentsov, A. Hoffmann, D. Bimberg
Appl. Phys. Lett., Vol 80, Iss 12, pp 2099-2101
Effect of the growth parameters on the electron structure of quantum dots in InGaAs/GaAs heterostructures
A. A. Tonkikh, V. A. Egorov, N. K. Polyakov, G. E. Cirlin, B. V. Volovik, N. A. Cherkashin, V. M. Ustinov
Technical Physics Letters, Vol 28, Iss 3, pp 191-193

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2001

Laser-like emission in the blue-green spectral range from InGaN/GaN/AlGaN structures under optical pumping
A. V. Sakharov, A. S. Usikov, W. V. Lundin, D. A. Bedarev, A. F. Tsatsulnikov, E. E. Zavarin, A. I. Besulkin, N. N. Ledentsov, D. Bimberg
Physica Status Solidi A, 188(1), 91-94
1.3 µm resonant-cavity InGaAs/GaAs quantum dot light-emitting devices
I. L. Krestnikov, N. A. Maleev, A. V. Sakharov, A. R. Kovsh, A. E. Zhukov, A. F. Tsatsul'nikov, V. M. Ustinov, Zh. I. Alferov, N. N. Ledentsov, D. Bimberg, J. A. Lott
Semiconductor Science and Technology 16(10), 844-848
Quantum dot lasers of NIR range based on GaAs
V. M. Ustinov, A. E. Zhukov, A. R. Kovsh, N. A. Maleev, S. S. Mikhrin, B. V. Volovik, Yu. G. Musikhin, A. F. Tsatsul'nikov, M. V. Maximov, Yu. M. Shernyakov, Zh. I. Alferov, N. N. Ledentsov, D. Bimberg, J. Lott
Izvestiya Akademii Nauk Seriya Fizicheskaya, 65(2), 214-218
Quantum dot multilayer structures in InAs/GaAs and InAs/Si systems
G. E. Cirlin, V. N. Petrov, N. K. Polyakov, V. A. Egorov, Yu. B. Samsonenko, B. V. Volovik, D. V. Denisov, V. M. Ustinov, Zh. I. Alferov, N. N. Ledentsov, D. Bimberg, N. D. Zakharov, P. Werner
Izvestiya Akademii Nauk Seriya Fizicheskaya, 65(2), 219-222
1.55-1.6 µm electroluminescence of GaAs based diode structures with quantum dots
A. E. Zhukov, B. V. Volovik, S. S. Mikhrin, N. A. Maleev, A. F. Tsatsul'nikov, E. V. Nikitina, I. N. Kayander, V. M. Ustinov, N. N. Ledentsov
Technical Physics Letters, 27(9), 734-736
1300 nm GaAs-based microcavity LED incorporating InAs/GaInAs quantum dots
N. A. Maleev, A. V. Sakharov, C. Moeller, I. L. Krestnikov, A. R. Kovsh, S. S. Mikhrin, A. E. Zhukov, V. M. Ustinov, W. Passenberg, E. Pawlowski, H. Kunezel, A. F. Tsatsul'nikov, N. N. Ledentsov, D. Bimberg, Zh. I. Alferov
Jornal of Crystal Growth, 227, 1146-1150
1.3 µm InAs/GaAs quantum dot lasers and VCSELs grown by molecular beam epitaxy
V. M. Ustinov, A. E. Zhukov, N. A. Maleev, A. R. Kovsh, S. S. Mikhrin, B. V. Volovik, Yu. G.M usikhin, Yu. M. Shernyakov, M. V. Maximov, A. F. Tsatsul'nikov, N. N. Ledentsov, Zh. I. Alferov
Jornal of Crystal Growth, 227, 1155-1161
Comparative analysis of long-wavelength (1.3 µm) VCSELs on GaAs substrates
N. A. Maleev, A. Yu. Egorov, A. E. Zhukov, A. R. Kovsh, A. P. Vasil'ev, V. M. Ustinov, N. N. Ledentsov, Zh. I. Alferov
Semiconductors, 35(7), 847-853
1.3 µm vertical microcavities with InAs/InGaAs quantum dots and devices based on them
A. V. Sakharov, I. L. Krestnikov, N. A. Maleev, A. R. Kovsh, A. E. Zhukov, A. F. Tsatsul'nikov, V. M. Ustinov, N. N. Ledentsov, D. Bimberg, J. A. Lott, Zh. I. Alferov
Semiconductors, 35(7), 854-859
Reversibility of the island shape, volume and density in Stranski-Krastanow growth
N. N. Ledentsov, V. A. Shchukin, D. Bimberg, V. M. Ustinov, N. A. Cherkashin, Yu. G. Musikhin, B. V. Volovik, G. E. Cirlin, Zh. I. Alferov
Semicond. Sci. Technol., 16(6), 02-506
InAs/InGaAs quantum dot microcavity diode structures on GaAs substrates emitting in the 1.25-1.33 µm wavelength rang
N. A. Maleev, I. L. Krestnikov, A. R. Kovsh, A. V. Sakharov, A. E. Zhukov, V. M. Ustinov, S. S. Mikhrin, W. Passenberg, E. Pawlowski, C. Moller, A. F. Tsatsulnikov, H. Kunzel, N. N. Ledentsov, Zh. I. Alferov, D. Bimberg
Phys. Stat. Sol. (b), 224(3), 803-806
Large spectral splitting of TE and TM components of QDs in a microcavity
M. V. Maximov, I. L. Krestnikov, A. G. Makarov, A. E. Zhukov, N. A. Maleev, V. M. Ustinov, A. F. Tsatsulnikov, Zh. I. Alferov, A. Y. Chernyshov, N. N. Ledentsov, D. Bimberg, C. M. S. Torres
Phys. Stat. Sol. (b), 224(3), 811-814
Incorporation of InAs nanostructures in a silicon matrix: growth, structure and optical properties
G. E. Cirlin, N. K. Polyakov, V. N. Petrov, V. A. Egorov, D. V. Denisov, B. V. Volovik, V. M. Ustinov, Zh. I. Alferov, N. N. Ledentsov, R. Heitz, D. Bimberg, N. D. Zakharov, P. Werner, U. Gosele
Materials Science and Engineering, 80(1-3), 108-111
InGaAs nanodomains formed in situ on the surface of (Al,Ga)As
I. L. Krestnikov, N. A. Cherkashin, D. S. Sizov, D. A. Bedarev, I. V. Kochnev, V. M. Lantratov, N. N. Ledentsov
Technical Physics Letters, 27(3), 233-235
Arrays of two-dimensional islands formed by submonolayer insertions: Growth, properties, device
I. L. Krestnikov, N. N. Ledentsov, A. Hoffmann, D. D. Bimberg,
Phys. Stat. Sol. (a), 183(2), 207-233
Optical and structural properties of self-organized InGaAsN/GaAs nanostructures
B. V. Volovik, A. R. Kovsh, W. Passenberg, H. Kuenzel, N. Grote, N. A. Cherkashin, Yu. G. Musikhin, N. N. Ledentsov, D. Bimberg, V. M. Ustinov
Semicond. Sci. Technol., 16(3), 186-190
Composition analysis of coherent nanoinsertions of solid solutions on the basis of high-resolution electron micrographs
I. P. Soshnikov, O. M. Gorbenko, A. O. Golubok, N. N. Ledentsov
Semiconductors, 35(3), 347-352
Record power characteristics of InGaAs/AlGaAs/GaAs heterostructure lasers
D. A. Livshits, A. Yu. Egorov, I. V. Kochnev, V. A. Kapitonov, V. M. Lantratov, N. N. Ledentsov, T. A. Nalyot, I. S. Tarasov
Semiconductors, 35(3), 365-369
Optical properties of submonolayer germanium clusters formed by molecular-beam epitaxy in a silicon matrix
G. E. Cirlin, P. Werner, G. Gosele, B. V. Volovik, V. M. Ustinov, N. N. Ledentsov
Technical Physics Letters, 27(1), 14-16
Thermodynamic analysis of the MBE growth of GaInAsN
V. A. Odnoblyudov, A. Yu. Egorov, A. R. Kovsh, A. E. Zhukov, N. A. Maleey, E. S. Semenova, V. M. Ustinov
Semicond. Sci. Technol., 16(10), 831-835
1.3 µm GaAs-based quantum well and quantum dot lasers: Comparative analysis
A. Yu. Egorov, A. E. Zhukov, V. M. Ustinov
J. Electron. Mater., 30(5), 477-481
Self-assembled InAs quantum dots in an InGaAsN matrix on GaAs
A. Yu. Egorov, D. A. Bedarev, D. Bernklau, G. Dumitras, H. Riechert
Phys. Stat. Sol. (b), 224(3), 839-843
GaAsN-on-GaAs MBE using a DC plasma source
A. E. Zhukov, E. S. Semenova, V. M. Ustinov, E. R. Weber
Technical Physics, 46(10), 1265-1269
Photoluminescence emission (1.3-1.4 µm) from quantum dots heterostructures based on GaAs
V. A. Egorov, N. K. Polyakov, A. A. Tonkikh, V. N. Petrov, G. E. Cirlin, B. V. Volovik, A. E. Zhukov, Yu. G. Musikhin, N. A. Cherkashin, V. M. Ustinov
Appl. Surface Science, 175, 243-248
Thermodynamic analysis of the growth of GaAsN ternary compounds by molecular beam epitaxy
V. A. Odnoblyudov, A. R. Kovsh, A. E. Zhukov, N. A. Maleev, E. S. Semenova, V. M. Ustinov
Semiconductors, 35(5), 533-538
Growth and characterization of AlGaN/GaN superlattices
W. V. Lundin, A. V. Sakharov, A. F. Tsatsulnikov, E. E. Zavarin, A. I. Besulkin, M. F. Kokorev, R. N. Kyutt, V. Yu. Davydov, V. V. Tretyakov, D. V. Pakhnin, A. S. Usikov
Phys. Stat. Sol. (a), 188(2), 885-888
Growth, optical and structural characterization of InGaN/GaN/AlGaN optically pumped lasers
W. V. Lundin, A. V. Sakharov, A. S. Usikov, D. A. Bedarev, A. F. Tsatsulnikov, R. C. Tu, S. B. Yin, J. Y. Chi
Phys. Stat. Sol. (a), 188(1), 73-77
Comparative study of InGaN/GaN structures grown by MOCVD using various growth sequences
A. V. Sakharov, A. S. Usikov, W. V. Lundin, A. F. Tsatsulnikov, R. C. Tu, S. B. Yin, J. Y. Chi
Phys. Stat. Sol. (b), 228(1), 95-98

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2000

Tuning quantum dot properties by activated phase separation of an InGa(Al)As alloy grown on InAs stressors
M. V. Maximov, A. F. Tsatsul'nikov, B. V. Volovik, D. S. Sizov, Yu. M. Shernyakov, I. N. Kaiander, A. E. Zhukov, A. R. Kovsh, S. S. Mikhrin, V. M. Ustinov, Zh. I. Alferov, R. Heitz, V. A. Shchukin, N. N. Ledentsov, D. Bimberg, Yu. G. Musikhin, W. Neumann
Phys. Rev. B, 62(24), 16671-16680
Carrier relaxation mechanisms and Fermi versus non-Fermi carrier distribution in quantum dot arrays formed by activated alloy phase separation
M. V. Maximov, A. F. Tsatsul'nikov, D. S. Sizov, Yu. M. Shernyakov, A. E. Zhukov, A. R. Kovsh, S. S. Mikhrin, V. M. Ustinov, Zh. I. Alferov, N. N. Ledentsov, D. Bimberg, T. Maka, C. M. S. Torres
Nanotechnology,
Long-wavelength quantum dot lasers on GaAs substrates
V. M. Ustinov, A. E. Zhukov, A. R. Kovsh, S. S. Mikhrin, N. A. Maleev, B. V. Volovik, Yu. G. Musikhin, Yu. M. Shernyakov, E. Yu. Kondat'eva, M. V. Maximov, A. F. Tsatsul'nikov, N. N. Ledentsov, Zh. I. Alferov, J. A. Lott, D. Bimberg
Nanotechnology, 11(4), 397-400
Volmer-Weber and Stranski-Krastanov InAs-(Al,Ga)As quantum dots emitting at 1.3 µm
A. F. Tsatsul'nikov, A. R. Kovsh, A. E. Zhukov, Yu. M. Shernyakov, Yu. G. Musikhin, V. M. Ustinov, N. A. Bert, P. S. Kop'ev, Zh. I. Alferov, A. M. Mintairov, J. L. Merz, N. N. Ledentsov, D. Bimberg
Jorn. of Appl. Phys 88(11), 6272-6275
0.94 µm diode lasers based on Stranski-Krastanow and sub-monolayer quantum dots
S. S. Mikhrin, A. E. Zhukov, A. R. Kovsh, N. A. Maleev, V. M. Ustinov, Yu. M. Shernyakov, I. P. Soshnikov, D. A. Livshits, I. S. Tarasov, D. A. Bedarev, B. V. Volovik, M. V. Maximov, A. F. Tsatsul'nikov, N. N. Ledentsov, P. S. Kop'ev, D. Bimberg, Zh. I. Alferov
Semicond. Sci. Technol. 15(11), 1061-1064
The emission from the structures with arrays of coupled quantum dots grown by the submonolayer epitaxy in the spectral range of 1.3-1.4 µm
B. V. Volovik, D. S. Sizov, A. F. Tsatsul'nikov, Yu. G. Musikhin, N. N. Ledentsov, V. M. Ustinov, V. A. Egorov, V. N. Petrov, N. K. Polyakov, G. E. Tsyrlin
Semiconductors 34(11), 1316-1320
GaAs-Based 1.3 µm InGaAs Quantum Dot Lasers: a Status Report
M. V. Maximov, N. N. Ledentsov, V. M. Ustinov, Zh. I. Alferov, D. Bimberg
Journal of Electronic Material, 29(5), 476-487.
Lasing in vertical direction in structures with InGaN quantum dots
I. L. Krestnikov, A. V. Sakharov, W. V. Lundin, A. S. Usikov, A. F. Tsatsulnikov, N. N. Ledentsov, Zh. I. Alferov, I. P. Soshnikov, D. Gerthsen, A. C. Plaut, J. Holst, A. Hoffmann, D. Bimberg,
Phys. Stat. Sol. (a), 180(1), 91-96
InAs-InGaAs quantum dot VCSELs on GaAs substrates emitting at 1.3 µm
J. A. Lott, N. N. Ledentsov, V. M. Ustinov, N. A. Maleev, A. E. Zhukov, A. R. Kovsh, M. V. Maximov, B. V. Volovik, Zh. I. Alferov, D. Bimberg
Electronics Lett, 36(16), 1384-1385
Formation of GaAsN nanoinsertions in a GaN matrix by metal-organic chemical vapour deposition
A. F. Tsatsul'nikov, I. L. Krestnikov, W. V. Lundin, A. V. Sakharov, A. P. Kartashova, A. S. Usikov, Zh. I. Alferov, N. N. Ledentsov, A. Strittmatter, A. Hoffmann, D. Bimberg, I. P. Soshnikov, D. Litvinov, A. Rosenauer, D. Gerthsen, A. Plaut
Semicond. Sci. Technol., 15(7), 766-769
Study of multilayer structures with InAs nanoobjects in a silicon matrix
V. N. Petrov, N. K. Polyakov, V. A. Egorov, G. E. Cirlin, N. D. Zakharov, P. Werner, V. M. Ustinov, D. V. Denisov, N. N. Ledentsov, Zh. I. Alferov
Semiconductors, 34(7), 810-814
Optical properties of InAs quantum dots in a Si matrix
R. Heitz, N. N. Ledentsov, D. Bimberg, A. Yu. Egorov, M. V. Maximov, V. M. Ustinov, A. E. Zhukov, Zh. I. Alferov, G. E. Cirlin, I. P. Soshnikov, N. D. Zakharov, P. Werner, U. Gosele
Physica E, 7(3-4), 317-321
Quantum dots formed by activated spinodal decomposition of InGa(Al)As alloy on InAs stressors
M. V. Maximov, A. F. Tsatsul'nikov, B. V. Volovik, D. A. Bedarev, A. E. Zhukov, A. R. Kovsh, N. A. Maleev, V. M. Ustinov, P. S. Kop'ev, Zh. I. Alferov, R. Heitz, N. N. Ledentsov, D. Bimberg
Physica E, 7(3-4), 326-330
Optical properties of quantum dots formed by activated spinodal decomposition for GaAs-based lasers emitting at similar to 1.3 µm
M. V. Maximov, A. F. Tsatsul'nikov, B. V. Volovik, D. A. Bedarev, Yu. M. Shernyakov, I. N. Kaiander, E. Yu. Kondrat'eva, A. E. Zhukov, A. R. Kovsh, N. A. Maleev, S. S. Mikhrin, V. M. Ustinov, Yu. G. Musikhin, P. S. Kop'ev, Zh. I. Alferov, R. Heitz, N. N. Ledentsov, D. Bimberg
Microelectronic Engineering, 51-2, 61-72
Long-wavelength emission in InGaAsN/GaAs heterostructures with quantum wells
B. V. Volovik, A. R. Kovsh, W. Passenberg, H. Kuenzel, N. N. Ledentsov, V. M. Ustinov
Technical Physics Letters, 26(5), 443-445
Quantum dots formed by ultrathin insertions in wide-gap matrices
N. N. Ledentsov, I. L. Krestnikov, M. Strassburg, R. Engelhardt, S. Rodt, R. Heitz, U. W. Pohl, A. Hoffmann, D. Bimberg, A. V. Sakharov, W. V. Lundin, A. S. Usikov, Zh. I. Alferov, D. Litvinov, A. Rosenauer, D. Gerthsen
Thin Solid Films, 367(1-2), 40-47
Quantum dot lasers: breakthrough in optoelectronics
D. Bimberg, M. Grundmann, F. Heinrichsdorff, N. N. Ledentsov, V. M. Ustinov, A. E. Zhukov, A. R. Kovsh, M. V. Maximov, Yu. M. Shernyakov, B. V. Volovik, A. F. Tsatsul'nikov, P. S. Kop'ev, Z. I. Alferov
Thin Solid Films, 367(1-2), 235-249
1.3 µm luminescence and gain from defect-free InGaAs-GaAs quantum dots grown by metal-organic chemical vapour deposition
N. N. Ledentsov, M. V. Maximov, D. Bimberg, T. Maka, C. M. S. Torres, I. V. Kochnev, I. L. Krestnikov, V. M. Lantratov, N. A. Cherkashin, Yu. G. Musikhin, Zh. I. Alferov
Semicond. Sci. Technol., 15(6), 604-607
Specifics of MOCVD formation of In_xGa_1-xN inclusions in a GaN matrix
I. P. Soshnikov, W. V. Lundin, A. S. Usikov, I. P. Kalmykova, N. N. Ledentsov, A. Rosenauer, B. Neubauer, D. Gerthsen
Semiconductors, 34(6), 621-625
Stacked InAs/InGaAs quantum dot heterostructures for optical sources emitting in the 1.3 µm wavelength range
N. A. Maleev, A. E. Zhukov, A. R. Kovsh, S. S. Mikhrin, V. M. Ustinov, D. A. Bedarev, B. V. Volovik, I. L. Krestnikov, I. N. Kayander, V. A. Odnoblyudov, A. A. Suvorova, A. F. Tsatsul'nikov, Yu. M. Shernyakov, N. N. Ledentsov, P. S. Kop'ev, Zh. I. Alferov, D. Bimberg
Semiconductors, 34(5), 594-597
Power conversion efficiency of quantum dot laser diodes
A. E. Zhukov, A. R. Kovsh, S. S. Mikhrin, N. A. Maleev, V. A. Odnoblyudov, V. M. Ustinov, Yu. M. Shernyakov, E. Yu. Kondrat'eva, D. A. Livshits, I. S. Tarasov, N. N. Ledentsov, P. S. Kop'ev, Zh. I. Alferov, D. Bimberg
Semiconductors, 34(5), 609-613
3.5 W continuous wave operation from quantum dot laser
A. E. Zhukov, A. R. Kovsh, V. M. Ustinov, D. A. Livshits, P. S. Kop'ev, Zh. I. Alferov, N. N. Ledentsov, D. Bimberg
Materials Science and Engineering - B, 74(1-3), 70-74
Lasing in the vertical direction in InGaN/GaN/AlGaN structures with InGaN quantum dots
I. L. Krestnikov, A. V. Sakharov, W. V. Lundin, Yu. G. Musikhin, A. P. Kartashova, A. S. Usikov, A. F. Tsatsul'nikov, N. N. Ledentsov, Zh. I. Alferov, I. P. Soshnikov, E. Hahn, B. Neubauer, A. Rosenauer, D. Litvinov, D. Gerthsen, A. C. Plaut, A. A. Hoffmann, D. Bimberg
Semiconductors, 34(4), 481-487
Effect of growth conditions on the formation of InAs quantum dots on Si(100)
G. E. Cirlin, N. K. Polyakov, V. N. Petrov, Yu. B. Samsonenko, S. A. Masalov, A. O. Golubok, N. N. Ledentsov, D. Bimberg, D. V. Denisov, V. M. Busov, V. M. Ustinov, Zh. I. Alferov
Izvestiya Akademii Nauk Seriya Fizicheskaya, 64(2), 344-347
A spatially single-mode laser for a range of 1.25-1.28 µm on the basis of InAs quantum dots on a GaAs substrate
S. S. Mikhrin, A. E. Zhukov, A. R. Kovsh, N. A. Maleev, V. M. Ustinov, Yu. M. Shernyakov, I. N. Kayander, E. Yu. Kondrat'eva, D. A. Livshits, I. S. Tarasov, M. V. Maksimov, A. F. Tsatsul'nikov, N. N. Ledentsov, P. S. Kop'ev, D. Bimberg, Zh. I. Alferov
Semiconductors, 34(1), 119-121
Mechanisms of InGaAlAs solid solution decomposition stimulated by InAs quantum dots
A. F. Tsatsul'nikov, B. V. Volovik, D. A. Bedarev, A. E. Zhukov, A. R. Kovsh, N. N. Ledentsov, M. V. Maksimov, N. A. Maleev, Yu. G. Musikhin, V. M. Ustinov, N. A. Bert, P. S. Kop'ev, D. Bimberg, Zh. I. Alferov
Semiconductors, 34(3), 323-326
InGaAs-GaAs Quantum Dots for application in longwavelength (1.3 µm) resonant vertical cavity enhanced devices
M. V. Maximov, I. L. Krestnikov, Yu. M. Shernyakov, A. E. Zhukov, N. A. Maleev, Yu. G. Musikhin, V. M. Ustinov, Zh. I. Alferov, A. Yu. Chernyshov, N. N. Ledentsov, D. Bimberg, T. Maka and C. M. Sotomayor Torres
Journal of Electronic Material, 29(3), 487-494.
8W continuous wave operation of InGaAsN lasers at 1.3 µm
D. A. Livshits, A. Yu. Egorov, H. Riechert
Electronics Lett., 36(16), 1381-1382
1.3-1.4 µm photoluminescence emission from InAs/GaAs quantum dot multilayer structures grown on GaAs singular and vicinal substrates
V. A. Egorov, G. E. Cirlin, N. K. Polyakov, V. N. Petrov, A. A. Tonkikh, B. V. Volovik, Yu. G. Musikhin, A. E. Zhukov, A. F. Tsatsul'nikov, V. M. Ustinov
Nanotechnology, 11(4), 323-326
GaAs-based long-wavelength lasers
V. M. Ustinov, A. E. Zhukov
Semicond. Sci. Technol., 15(8), R41-R54
Photoluminescence from multilayer InAs/GaAs structures with quantum dots in the 1.3-1.4 µm wavelength range
V. A. Egorov, V. N. Petrov, N. K. Polyakov, G. E. Tsyrlin, B. V. Volovik, A. E. Zhukov, V. M. Ustinov
Technical Physics Letters, 26(7), 631-633
Internal microstrain and distribution of composition and cathodoluminescence over lapped Al_xGa_1-xN epilayers on sapphire
A. S. Usikov, V. V. Tret'yakov, A. V. Bobyl', R. N. Kyutt, W. V. Lundin, B. V. Pushnyi, N. M. Shmidt
Semiconductors, 34(11), 1248-1254

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1999

Optical and structural properties of InAs quantum dots in a GaAs matrix for a spectral range up to 1.7 µm
M. V. Maximov, A. F. Tsatsul'nikov, B. V. Volovik, D. A. Bedarev, A. Yu. Egorov, A. E. Zhukov, A. R. Kovsh, N. A. Bert, V. M. Ustinov, P. S. Kop'ev, and Zh. I. Alferov, N. N. Ledentsov and D. Bimberg, I. P. Soshnikov and P. Werner
Appl. Phys. Lett. 75, pp. 2347-2349.
Vertical-cavity surface-emitting lasers using InGaN quantum dots
N. N. Ledentsov, Zh. I. Alferov I. L. Krestnikov, W. V. Lundin, A. V. Sakharov, I. P. Soshnikov, A. F. Tsatsul'nikov, D. Bimberg, and A. Hoffmann
Compound Semiconductor 5 (9), November/December 1999, pp. 61-64.
Optical properties of structures with single and multiple InGaN insertions in a GaN matrix
A. V. Sakharov, W. V. Lundin, I. L. Krestnikov, V. A. Semenov, A. S. Usikov, A. F. Tsatsul'nikov, Yu. G. Musikhin, M. V. Baidakova, Zh. I. Alferov, N. N. Ledentsov, J. Holst, A. Hoffmann, D. Bimberg, I. P. Soshnikov and D. Gerthsen
Phys. Stat. Sol. (B) 216, pp. 435- 440.
Photopumped InGaN/GaN/AlGaN vertical cavity surface emitting laser operating at room temperature
I. L. Krestnikov, W. V. Lundin, A. V. Sakharov, V. A. Semenov, A. S. Usikov, A. F. Tsatsul'nikov, Zh. I. Alferov, A. Hoffmann, D. Bimberg
Phys. Stat. Sol. (B) 216, pp. 511-515.
Single transverse mode operation of long wavelength (~1.3 µm) quantum dot laser
M. V. Maximov, Yu. M. Shernyakov, I. N. Kaiander, D. A. Bedarev, E. Yu. Kondrat'eva, P. S. Kop'ev, A. R. Kovsh, N. A. Maleev, S. S. Mikhrin, A. F. Tsatsul'nikov, V. M. Ustinov, B. V. Volovik, A. E. Zhukov, Zh. I. Alferov, N. N. Ledentsov, D. Bimberg
Electonics Letters 35(23) 2038-2039
3.9 W CW Power from Sub-monolayer Quantum Dot Diode Laser
A. E. Zhukov, A. R. Kovsh, S. S. Mikhrin, N. A. Maleev, V. M. Ustinov, D. A. Lifshits, I. S. Tarasov, D. A. Bedarev, M. V. Maximov, A. F. Tsatsul'nikov, I. P. Soshnikov, P. S. Kop'ev, Zh. I. Alferov, N. N. Ledentsov, and D. Bimberg
Electonics Letters 35 (21), 1845-1847.
1.3 µm GaAs-based laser using quantum dots obtained by activated spinodal decomposition.
Yu. M. Shernyakov, D. A. Bedarev, E. Yu. Kondrat'eva, P. S. Kop'ev, A. R. Kovsh, N. A. Maleev, M. V. Maximov, V. M. Ustinov, B. V. Volovik, A. E. Zhukov, Zh. I. Alferov, N. N. Ledentsov, D. Bimberg
Electonics Letters 35 (11), 898.
Surface-Mode Lasing from Stacked InGaN Insertions in a GaN Matrix
A. V. Sakharov, W. V. Lundin, I. L. Krestnikov, A. S. Usikov, A. F. Tsatsul'nikov, Yu. G. Musikhin, M. V. Baidakova, Zh. I. Alferov, N. N. Ledentsov, A. A. Hoffmannnd D. Bimberg.
Appl. Phys. Lett. 74(26), 3921.
Lasing in the vertical direction in quantum-size InGaN/GaN multilayer heterostructures
A. V. Sakharov, W. V. Lundin, V. A. Semenov, A. S. Usikov, N. N. Ledentsov, A. F. Tsatsul'nikov, and M. V. Badakova
Tech. Phys. Lett. 25(6), 462-465
Quantum dot lasers: the birth and future trends
N. N. Ledentsov
Semiconductors 33 (9), 946-950
Heteroepitaxial growth of InAs on Si: a new type of quantum dots
G. E. Tsyrlin, V. N. Petrov, V. G. Dubrovsky, Yu. B. Samsonenko, A. O. Golubok, S. A. Masalov, N. I. Komyak, V. M. Ustinov, A. Yu. Egorov, A. R. Kovsh, M. V. Maksimov, A. F. Tsatsul'nikov, B. V. Volovik, A. E. Zhukov, P. S. Kop'ev, N. N. Ledentsov, Zh. I. Alferov and D. Bimberg
Semiconductors 33 (9), 972-975
Long-wavelength emission in structures with quantum dots formed by the stimulated decomposition of a solid solution at strained islands
B. V. Volovik, A. F. Tsatsul'nikov, D. A. Bedarev, A. Yu. Egorov, A. E. Zhukov, A. R. Kovsh, N. N. Ledentsov, M. V. Maksimov, N. A. Maleev, Yu. G. Musikhin, A. A. Suvorova, V. M. Ustinov, P. S. Kop'ev, Zh. I. Alferov, D. Bimberg and P. Werner
Semiconductors 33 (8), 901-905
Investigation of MOVPE-grown GaN layers doped with As atoms
A. F. Tsatsul'nikov, B. Ya. Ber, A. P. Kartashova, Yu. A. Kudryavtsev, N. N. Ledentsov, W. V. Lundin, M. V. Maksimov, A. V. Sakharov, A. S. Usikov, Zh. I. Alferov, and A. Hoffmann
Semiconductors 33 (7), 728-730
Room Temperature Photopumped InGaN/GaN/AlGaN Vertical Cavity Surface Emitting Laser
I. L. Krestnikov, W. V. Lundin, A. V. Sakharov, V. A. Semenov, A. S. Usikov, A. F. Tsatsul'nikov, and Zh. I. Alferov N. N. Ledentsov, A. Hoffmann, D. Bimberg
Appl. Phys. Lett. 74 (9), 1192-1194
Intrinsic optical confinement and lasing in InAs-AlGaAs submonolayer superlattices
N. N. Ledentsov, A. F. Tsatsul'nikov, A. Yu. Egorov, P. S. Kop'ev, A. R. Kovsh, M. V. Maximov, V. M. Ustinov, B. V. Volovik, A. E. Zhukov, Zh. I. Alferov, I. L. Krestnikov, D. Bimberg, and A. Hoffmann
Appl. Phys. Lett. 74, 161-163
Interconnection between gain spectrum and cavity mode in a quantum dot vertical cavity laser
N. N. Ledentsov, D. Bimberg, V. M. Ustinov, M. V. Maximov, Zh. I. Alferov, V. P. Kalosha and J. A. Lott
Semiconductor Science and Technology 14, 99-102
Growth and characterization of thick Si-doped AlGaN epilayers on sapphire substrates
W. V. Lundin, A. S. Usikov, A. V. Sakharov, V. V. Tretyakov, D. V. Poloskin, N. N. Ledentsov, A. Hoffmann
Phys. Stat. Sol. (a), 176(1), 379-384
Gain characteristics of quantum-dot injection lasers
A. E. Zhukov, A. R. Kovsh, V. M. Ustinov, A. Yu. Egorov, N. N. Ledentsov, A. F. Tsatsul'nikov, M. V. Maksimov, S. V. Zaitsev, Yu. M. Shernyakov, A. V. Lunev, P. S. Kop'ev, Zh. I. Alferov, D. Bimberg
Semiconductors, 33(9), 1013-1015
3.5W CW operation of quantum dot laser
A. R. Kovsh, A. E. Zhukov, D. A. Livshits, A. Yu. Egorov, V. M. Ustinov, M. V. Maximov, Yu. G. Musikhin, N. N. Ledentsov, P. S. Kop'ev, Zh. I. Alferov, D. Bimberg
Electronics Lett, 35(14), 1161-1163
Quantum-dot injection heterolaser with 3.3 W output power
A. R. Kovsh, D. A. Livshits, A. E. Zhukov, A. Yu. Egorov, M. V. Maksimov, V. M. Ustinov, I. S. Tarasov, N. N. Ledentsov, P. S. Kop'ev, Zh. I. Alferov
Technical Physics Letters, 25(6), 438-439
InGaAs GaAs structures with quantum dots in vertical optical cavities for wavelengths near 1.3 µm
N. A. Maleev, A. E. Zhukov, A. R. Kovsh, A. Yu. Egorov, V. M. Ustinov, I. L. Krestnikov, A. V. Lunev, A. V. Sakharov, B. V. Volovik, N. N. Ledentsov, P. S. Kop'ev, Zh. I. Alferov, D. Bimberg
Semiconductors, 33(5), 586-589
Control of the emission wavelength of self-organized InGaAs quantum dots: main achievements and present status
A. E. Zhukov, V. M. Ustinov, A. R. Kovsh, A. Yu. Egorov, N. A. Maleev, N. N. Ledentsov, A. F. Tsatsul'nikov, M. V. Maximov, Yu. G. Musikhin, N. A. Bert, P. S. Kop'ev, D. Bimberg, Zh. I. Alferov
Semicond. Sci. Technol., 14(6), 575-581
InAs/InGaAs quantum dot structures on GaAs substrates emitting at 1.3 mu m
V. M. Ustinov, N. A. Maleev, A. E. Zhukov, A. R. Kovsh, A. Yu. Egorov, A. V. Lunev, B. V. Volovik, I. L. Krestnikov, Yu. G. Musikhin, N. A. Bert, P. S. Kop'ev, Zh. I. Alferov, N. N. Ledentsov, D. Bimberg
Appl. Phys. Lett., 74(19), 2815-2817
Lasing in structures with InAs quantum dots in an (Al,Ga)As matrix grown by submonolayer deposition
A. F. Tsatsul'nikov, B. V. Volovik, N. N. Ledentsov, M. V. Maximov, A. Yu. Egorov, A. R. Kovsh, V. M. Ustinov, A. E. Zhukov, P. S. Kop'ev, Zh. I. Alferov, I. A. Kozin, M. V. Belousov, I. P. Soshnikov, P. Werner, D. Litvinov, U. Fischer, A. Rosenauer, D. Gerthsen
J. Electron. Mater., 28(5), 537-541
Molecular beam epitaxy (MBE) growth of composite (In,Al)As/(In,Ga)As vertically coupled quantum dots and their application in injection lasers
A. R. Kovsh, A. E. Zhukov, A. Yu. Egorov, V. M. Ustinov, Yu. M. Shernyakov, M. V. Maximov, B. V. Volovik, A. F. Tsatsul'nikov, Yu. V. Musikhin, N. N. Ledentsov, P. S. Kop'ev, D. Bimberg, Zh. I. Alferov
Jornal of Crystal Growth, 202, 1117-1120
1.75 mu m emission from self-organized InAs quantum dots on GaAs
V. M. Ustinov, A. Yu. Egorov, A. E. Zhukov, A. R. Kovsh, N. N. Ledentsov, M. V. Maximov, B. V. Volovik, A. F. Tsatsul'nikov, P. S. Kop'ev, Zh. I. Alferov, I. P. Soshnikov, N. D. Zakharov, P. Werner, D. Bimberg,
Jornal of Crystal Growth, 202, 1143-1145
Self-organized InAs quantum dots in a silicon matrix
A. Yu. Egorov, A. R. Kovsh, V. M. Ustinov, A. E. Zhukov, M. V. Maximov, G. E. Cirlin, N. N. Ledentsov, D. Bimberg, P. Werner, Zh. I. Alferov
Jornal of Crystal Growth, 202, 1202-1204
Exciton waveguide and lasing in structures with superfine GaAs quantum wells and InAs submonolayer inclusions in an AlGaAs host
A. F. Tsatsul'nikov, B. V. Volovik, N. N. Ledentsov, M. V. Maximov, A. Yu. Egorov, A. R. Kovsh, V. M. Ustinov, A. E. Zhukov, P. S. Kop'ev, Zh. I. Alferov, I. E. Kozin, M. V. Belousov, D. Bimberg,
Semiconductors, 33(4), 467-470
Optical properties of InAs quantum dots in a Si matrix
R. Heitz, N. N. Ledentsov, D. Bimberg, A. Yu. Egorov, M. V. Maximov, V. M. Ustinov, A. E. Zhukov, Zh. I. Alferov, G. E. Cirlin, I. P. Soshnikov, N. D. Zakharov, P. Werner, Gosele U
Appl. Phys. Lett., 74(12), 1701-1703
Planar-doped gallium-arsenide structures for bulk potential barrier microwave diodes
N. A. Maleev, A. Yu. Egorov, A. E. Zhukov, A. R. Kovsh, V. M. Ustinov, V. V. Volkov, M. F. Kokorev
Semiconductors, 33(3), 345-349
Photo- and electroluminescence in the 1.3 µm wavelength range from quantum-dot structures grown on GaAs substrates
A. E. Zhukov, A. R. Kovsh, A. Yu. Egorov, N. A. Maleev, V. M. Ustinov, B. V. Volovik, M. V. Maximov, A. F. Tsatsul'nikov, N. N. Ledentsov, Yu. M. Shernyakov, A. V. Lunev, Yu. G. Musikhin, N. A. Bert, P. S. Kop'ev, Zh. I. Alferov
Semiconductors, 33(2), 153-156
Influence of growth conditions on the formation and luminescence properties of InGaAs quantum dots in a Si matrix
A. E. Zhukov, A. Yu. Egorov, A. R. Kovsh, V. M. Ustinov, N. N. Ledentsov, M. V. Maximov, A. F. Tsatsul'nikov, B. V. Volovik, P. S. Kop'ev, Zh. I. Alferov
Semiconductors, 33(2), 165-168
Gain in injection lasers based on self-organized quantum dots
A. R. Kovsh, A. E. Zhukov, A. Yu. Egorov, V. M. Ustinov, N. N. Ledentsov, M. V. Maximov, A. F. Tsatsul'nikov, P. S. Kop'ev
Semiconductors, 33(2), 184-191
Gain characteristics of quantum dot injection lasers
A. E. Zhukov, A. R. Kovsh, V. M. Ustinov, A. Yu. Egorov, N. N. Ledentsov, A. F. Tsatsul'nikov, M. V. Maximov, Yu. M. Shernyakov, V. I. Kopchatov, A. V. Lunev, P. S. Kop'ev, D. Bimberg, Zh. I. Alferov
Semicond. Sci. Technol., 14(1), 118-123
Influence of composition and anneal conditions on the optical properties of (In, Ga)As quantum dots in an (Al, Ga)As matrix
Z. Zhen, D. A. Bedarev, B. V. Volovik, N. N. Ledentsov, A. V. Lunev, M. V. Maximov, A. F. Tsatsul'nikov, A. Yu. Egorov, A. E. Zhukov, A. R. Kovsh, V. M. Ustinov, P. S. Kop'ev
Semiconductors, 33(1), 80-84
Effect of growth conditions on InAs nanoislands formation on Si(100) surface
G. E. Cirlin, N. K. Polyakov, V. N. Petrov, V. A. Egorov, Yu. B. Samsonenko, D. V. Denisov, V. M. Busov, B. V. Volovik, V. M. Ustinov, Zh. I. Alferov, N. N. Ledentsov, D. Bimberg, N. D. Zakharov, Werner
Czechoslovak Journal of Physics, 49(11), 1547-1552
Continuous-wave operation of long-wavelength quantum-dot diode laser on a GaAs substrate
A. E. Zhukov, A. R. Kovsh, V. M. Ustinov, Yu. M. Shernyakov, S. S. Mikhrin, N. A. Maleev, E. Yu. Kondrat'eva, D. A. Livshits, M. V. Maximov, B. V. Volovik, D. A. Bedarev, Yu. G. Musikhin, N. N. Ledentsov, P. S. Kop'ev, Zh. I. Alferov, D. Bimberg
Photonics Technol. Lett11(11), 1345-1347
Long-wavelength lasing from multiply stacked InAs/InGaAs quantum dots on GaAs substrates
A. E. Zhukov, A. R. Kovsh, N. A. Maleev, S. S. Mikhrin, V. M. Ustinov, A. F. Tsatsul'nikov, M. V. Maximov, B. V. Volovik, D. A. Bedarev, Yu. M. Shernyakov, P. S. Kop'ev, Zh. I. Alferov, N. N. Ledentsov, D. Bimberg
Appl. Phys. Lett., 75(13), 1926-1928
Lasing at a wavelength close to 1.3 µm in InAs quantum-dot structures
A. R. Kovsh, A. E. Zhukov, N. A. Maleev, S. S. Mikhrin, V. M. Ustinov, A. F. Tsatsul'nikov, M. V. Maximov, B. V. Volovik, D. A. Bedarev, Yu. M. Shernyakov, E. Yu. Kondrat'eva, N. N. Ledentsov, P. S. Kop'ev, Zh. I. Alferov, D. Bimberg
Semiconductors, 33(80), 929-932

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1998

Investigation of the device characteristics of a low-threshold quantum-dot laser emitting at 1.9 µm
A. E. Zhukov, A. Yu. Egorov, A. R. Kovsh, V. M. Ustinov, S. V. Zaitsev, N. Yu. Gordeev, V. I. Kopchatov, A. V. Lunev, A. F. Tsatsul'nikov, B. V. Volovik, N. N. Ledentsov, P. S. Kop'ev
Semiconductors 32, Iss 7, pp 795-797
Heterostructure for UV LEDs based on thick AlGaN layers
A. V. Sakharov, W. V. Lundin, A. S. Usikov, U. I. Ushakov, Yu. A. Kudryavtsev, A. V. Lunev, Yu. M. Shernyakov, N. N. Ledentsov
MRS Internet Journal of Nitride Semiconductor Research Vol 3, Iss 28, pp 1-7
Effect of the quantum-dot surface density in the active region on injection-laser characteristics
A. R. Kovsh, A. E. Zhukov, A. Yu. Egorov, V. M. Ustinov, Yu. M. Shernyakov, M. V. Maximov, A. F. Tsatsul'nikov, B. V. Volovik, A. V. Lunev, N. N. Ledentsov, P. S. Kop'ev, Zh. I. Alferov, D. Bimberg
Semiconductors Vol 32, Iss 9, pp 997-1000
Lateral association of vertically-coupled quantum dots
A. F. Tsatsul'nikov, M. V. Belousov, N. A. Bert, A. Yu. Egorov, P. S. Kop'ev, A. R. Kovsh, I. L. Krestnikov, N. N. Ledentsov, M. V. Maximov, A. A. Suvorova, V. M. Ustinov, B. V. Volovik, A. E. Zhukov, M. Grundmann, D. Bimberg, Zh. I. Alferov
Microelectronic Engineering Vol 43-4, pp 37-43
Optical studies of modulation doped InAs/GaAs quantum dots
M. V. Maximov, N. N. Ledentsov, A. F. Tsatsul'nikov, V. M. Ustinov, A. V. Sakharov, B. V. Volovik, I. L. Krestnikov, Z. Zhen, P. N. Brounkov, S. G. Konnikov, P. S. Kop'ev, M. V. Belousov, Turk V, D. Bimberg
Microelectronic Engineering Vol 43-4, pp 71-77
Formation of InSb quantum dots in a GaSb matrix using molecular-beam epitaxy
A. F. Tsatsul'nikov, S. V. Ivanov, P. S. Kop'ev, I. L. Krestnikov, A. K. Kryganovskii, N. N. Ledentsov, M. V. Maximov, B. Ya. Mel'tser, P. V. Nekludov, A. A. Suvorova, A. N. Titkov, B. V. Volovik, M. Grundmann, D. Bimberg, Zh. I. Alferov
Microelectronic Engineering Vol 43-4, pp 85-90
Optical properties and lasing in CdSe-submonolayers in a (Zn,Mg)(S,Se) matrix
I. L. Krestnikov, N. N. Ledentsov, A. Hoffmann, D. Bimberg, S. V. Ivanov, M. V. Maximov, A. V. Sakharov, S. V. Sorokin, P. S. Kop'ev, Zh. I. Alferov, C. M. S. Torres
Phys. Stat. Sol. (a) Vol 168, Iss 1, pp 309-315
Lasing in submonolayer InAs/AlGaAs structures without external optical confinement
B. V. Volovik, A. F. Tsatsul'nikov, N. N. Ledentsov, M. V. Maximov, A. V. Sakharov, A. Yu. Egorov, A. E. Zhukov, A. R. Kovsh, V. M. Ustinov, P. S. Kop'ev, Zh. I. Alferov, I. E. Kozin, M. V. Belousov, D. Bimberg
Technical Physics Letters Vol 24, Iss 7, pp 567-569
Operating characteristics and their anisotropy in a high-power laser (1.5 W, 300 K) with a quantum-dot active region
Yu. M. Shernyakov, A. Yu. Egorov, B. V. Volovik, A. E. Zhukov, A. R. Kovsh, A. V. Lunev, N. N. Ledentsov, M. V. Maximov, A. V. Sakharov, V. M. Ustinov, Z. Zhao, P. S. Kop'ev, Zh. I. Alferov, D. Bimberg
Technical Physics Letters Vol 24, Iss 5, pp 351-353
Low-threshold quantum-dot injection heterolaser emitting at 1.84 µm
V. M. Ustinov, A. R. Kovsh, A. E. Zhukov, A. Yu. Egorov, N. N. Ledentsov, A. V. Lunev, Yu. M. Shernyakov, M. V. Maximov, A. F. Tsatsul'nikov, B. V. Volovik, P. S. Kop'ev, Zh. I. Alferov
Technical Physics Letters Vol 24, Iss 1, pp 22-23
Excitonic waveguiding and lasing in wide bandgap semiconductor
N. N. Ledentsov
Physics of the Solid State Vol 40, Iss 5, pp 775-777
Formation of InSb quantum dots in a GaSb matrix
A. F. Tsatsul'nikov, S. V. Ivanov, P. S. Kop'ev, A. K. Kryganovskii, N. N. Ledentsov, M. V. Maximov, B. Ya. Mel'tserA, P. V. Nekludov, A. A. Suvorova, A. N. Titkov, B. V. Volovik, M. Grundmann, D. Bimberg, Zh. I. Alferov
J. Electron. Mater. Vol 27, Iss 5, pp 414-417
Quantum dot heterostructures: fabrication, properties, lasers (Review)
N. N. Ledentsov, V. M. Ustinov, V. A. Shchukin, P. S. Kop'ev, Zh. I. Alferov, D. Bimberg
Semiconductors Vol 32, Iss 4, pp 343-365
High-power continuous-wave operation of a InGaAs/AlGaAs quantum dot laser
M. V. Maximov, Yu. M. Shernyakov, A. F. Tsatsul'nikov, A. V. Lunev, A. V. Sakharov, V. M. Ustinov, A. Yu. Egorov, A. E. Zhukov, A. R. Kovsh, P. S. Kop'ev, L. V. Asryan, Zh. I. Alferov, N. N. Ledentsov, D. Bimberg, A. O. Kosogov, P. Werner
J. Appl. Phys. Vol 83, Iss 10, pp 5561-5563
RT lasing and efficient optical confinement in CdSe/ZnMgSSe submonolayer superlattices
I. L. Krestnikov, M. V. Maximov, A. V. Sakharov, P. S. Kop'ev, Zh. I. Alferov, N. N. Ledentsov, D. Bimberg, C. M. S. Torres
Jornal of Crystal Growth Vol 185, pp 545-549
Optical properties of InAlAs quantum dots in an AlGaAs matrix
A. F. Tsatsul'nikov, A. Yu. Egorov, P. S. Kop'ev, A. R. Kovsh, N. N. Ledentsov, M. V. Maximov, A. A. Suvorova, V. M. Ustinov, B. V. Volovik, A. E. Zhukov, M. Grundmann, D. Bimberg, Zh. I. Alferov
Appl. Surf. Sci Vol 123, pp 381-384
Formation of InAs quantum dots in a GaAs matrix during growth on misoriented substrates
A. F. Tsatsul'nikov, B. V. Volovik, N. N. Ledentsov, M. V. Maximov, A. Yu. Egorov, A. E. Zhukov, A. R. Kovsh, V. M. Ustinov, C. Chen, P. S. Kop'ev, Zh. I. Alferov, V. N. Petrov, G. E. Cirlin, D. Bimberg
Semiconductors Vol 32, Iss 1, pp 84-89
RT lasing via nanoscale CdSe islands in a (Zn,Mg)(S,Se) matrix
I. L. Krestnikov, S. V. Ivanov, P. S. Kop'ev, N. N. Ledentsov, M. V. Maximov, A. V. Sakharov, S. V. Sorokin, C. M. S. Torres, D. Bimberg, Zh. I. Alferov
J. Electron. Mater. Vol 27, Iss 2, pp 73-76
Injection lasers based on InGaAs quantum dots in an AlGaAs matrix
A. E. Zhukov, V. M. Ustinov, A. Yu. Egorov, A. R. Kovsh, A. F. Tsatsul'nikov, M. V. Maximov, N. N. Ledentsov, S. V. Zaitsev, N. Yu. Gordeev, V. I. Kopchatov, Yu. M. Shernyakov, P. S. Kop'ev, D. Bimberg, Zh. I. Alferov
J. Electron. Mater. Vol 27, Iss 3, pp 106-109
GaAsN/GaAs and InGaAsN/GaAs heterostructures grown by molecular beam epitaxy
A. Yu. Egorov, A. E. Zhukov, A. R. Kovsh, V. M. Ustinov, V. V. Mamutin, S. V. Ivanov, V. N. Zhmerik, A. F. Tsatsul'nikov, D. A. Bedarev, P. S. Kop'ev
Technical Physics Letters Vol 24, Iss 12, pp 942-944
A thermodynamic analysis of the growth of III-V compounds with two volatile group V elements by molecular-beam epitaxy
A. Yu. Egorov, A. R. Kovsh, V. M. Ustinov, A. E. Zhukov, P. S. Kop'ev, Tu C W
Jornal of Crystal Growth Vol 188, Iss 1-4, pp 69-74
Macro- and microstrains in MOCVD-grown GaN
A. S. Usikov, V. V. Ratnikov, R. Kyutt, W. V. Lundin, B. V. Pushnyi, N. M. Shmidt, M. P. Scheglov
MRS Internet Journal of Nitride Semiconductor Research Vol 3, Iss 42, pp 1-8
Some features of a nucleation layer growth process and its influence on the GaN epilayer quality
W. V. Lundin, A. S. Usikov, B. V. Pushnyi, U. I. Ushakov, M. V. Stepanov, N. M. Shmidt, A. V. Sakharov, Yu. M. Zadiranov, S. M. Suturin, V. M. Busov
Silicon Carbide, III-Nitrides and Related Materials 1998, Vol 264-2, pp 1125-1128
Optical and structural studies of thick AlGaN alloy layers and AlGaN/GaN heterostructures on sapphire substrates
W. V. Lundin, A. S. Usikov, B. V. Pushnyi, U. I. Ushakov, M. V. Stepanov, N. M. Shmidt, T. V. Shubina, A. V. Sakharov, N. N. Faleev, V. A. Solov'ev, A. A. Sitnikova, Yu. A. Kudryavtsev, B. Yu. Ber, Yu. M. Zadiranov
Silicon Carbide, III-Nitrides and Related Materials 1998, Vol 264-2, pp 1315-1318
Electrical and optical properties of highly strained GaN epilayers
A. S. Usikov, W. V. Lundin, B. V. Pushnyi, N. M. Shmidt, V. Yu. Davydov, A. V. Sakharov, T. V. Shubina, A. A. Toropov, N. N. Faleev, M. Scheglov, A. F. Tsatsul'nikov
Silicon Carbide, III-Nitrides and Related Materials 1998, Vol 264-2, pp 1393-1396

Top

1997

Room-temperature lasing in structures with CdSe quantum islands in a ZnMgSSe matrix without external optical confinement
A. V. Sakharov, S. V. Ivanov, S. V. Sorokin, I. L. Krestnikov, B. V. Volovik, N. N. Ledentsov, P. S. Kop'ev
Technical Physics Letters Vol 23, Iss 4, pp 305-306
Lasing in submonolayer CdSe structures in a ZnSe matrix without external optical confinement
I. L. Krestnikov, N. N. Ledentsov, M. V. Maximov, A. V. Sakharov, S. V. Ivanov, S. V. Sorokin, L. N. Tenishev, P. S. Kop'ev, Zh. I. Alferov
Technical Physics Letters Vol 23, Iss 1, pp 23-25
Characteristics of stimulated emission from an optically pumped GaN/AlGaN double heterostructure
M. V. Maximov, A. V. Sakharov, W. V. Lundin, A. S. Usikov, B. V. Pushnyi, I. L. Krestnikov, N. N. Ledentsov, P. S. Kop'ev, Zh. I. Alferov, V. P. Rozum
Technical Physics Letters Vol 23, Iss 8, pp 597-599
Self-organized quantum wires and dots: New opportunities for device applications
N. N. Ledentsov
Progress in Crystal Growth and Characterization of materials Vol 35, Iss 2-4, pp 289-305
Growth and characterization of coherent quantum dots grown by single- and multi-cycle metal-organic chemical vapour deposition
I. V. Kochnev, N. N. Ledentsov, M. V. Maximov, A. F. Tsatsul'nikov, A. V. Sakharov, B. V. Volovik, P. S. Kop'evh. I. Alferov, D. Bimberg, A. O. Kosogov, S. S. Ruvimov, P. Werner, U. Gosele
Japanese Journal of Applied Physics part I - Regular Papers Short Notes & Review Papers, Vol 36, Iss 6B, pp 4107-4110
Negative characteristic temperature of InGaAs quantum dot injection laser
A. E. Zhukov, V. M. Ustinov, A. Yu. Egorov, A. R. Kovsh, A. F. Tsatsul'nikov, N. N. Ledentsov, S. V. Zaitsev, N. Yu. Gordeev, P. S. Kopev, Zh. I. Alferov
Japanese Journal of Applied Physics part I - Regular Papers Short Notes & Review Papers, Vol 36, Iss 6B, pp 4216-4218
InGaAs/GaAs quantum dot lasers with ultrahigh characteristic temperature (T₀=385K) grown by metal organic chemical vapour deposition
M. V. Maximov, I. V. Kochnev, Yu. M. Shernyakov, S. V. Zaitsev, N. Yu. Gordeev, A. F. Tsatsul'nikov, A. V. Sakharov, I. L. Krestnikov, P. S. Kop'ev, Zh. I. Alferov, N. N. Ledentsov, D. Bimberg, A. O. Kosogov, P. Werner, U. Gosele
Japanese Journal of Applied Physics part I - Regular Papers Short Notes & Review Papers, Vol 36, Iss 6B, pp 4221-4223
Coulomb interaction between carriers localized in InAs/GaAs quantum dots and on point defects
M. M. Sobolev, A. R. Kovsh, V. M. Ustinov, A. Yu. Egorov, A. E. Zhukov, M. V. Maksimov, Ledentsov NN
Defects in Semiconductors - ICDS-19, PTS 1-3, Vol 258-2, pp 1619-1624
Vertical cavity lasers based on vertically coupled quantum dots
J. A. Lott, N. N. Ledentsov, V. M. Ustinov, A. Yu. Egorov, A. E. Zhukov, P. S. Kop'ev, Zh. I. Alferov, D. Bimberg
Electronics Letters, Vol 33, Iss 13, pp 1150-1151
Thermodynamic analysis of the molecular-beam epitaxial growth of quaternary III-V compounds: Ga_xIn_1-xP_yAs_1-y
A. Yu. Egorov, A. R. Kovsh, A. E. Zhukov, V. M. Ustinov, P. S. Kop'ev
Semiconductors, Vol 31, Iss 10, pp 989-993
Arrays of strained InAs quantum dots in an (In Ga)As matrix, grown on InP substrates by molecular-beam epitaxy
V. M. Ustinov, A. E. Zhukov, A. F. Tsatsul'nikov, A. Yu. Egorov, A. R. Kovsh, M. V. Maksimov, A. A. Suvorova, N. A. Bert, P. S. Kop'ev
Semiconductors, Vol 31, Iss 10, pp 1080-1083
Lateral association of vertically coupled quantum dots
A. F. Tsatsul'nikov, A. Yu. Egorov, A. E. Zhukov, A. R. Kovsh, V. M. Ustinov, N. N. Ledentsov, M. V. Maksimov, B. V. Volovik, A. A. Suvorova, N. A. Bert, P. S. Kop'ev
Semiconductors, Vol 31, Iss 7, pp 722-725
Optical properties of vertically coupled InGaAs quantum dots in a GaAs matrix
M. V. Maksimov, Yu. M. Shernyakov, S. V. Zaitsev, N. Yu. Gordeeev, A. Yu. Egorov, A. E. Zhukov, P. S. Kop'ev, A. O. Kosogov, A. V. Sakharov, N. N. Ledentsov, V. M. Ustinov, A. F. Tsatsul'nikov, Zh. I. Alferov, J. Bohrer, D. Bimberg
Semiconductors, Vol 31, Iss 6, pp 571-574
The properties of low-threshold heterolasers with clusters of quantum dots
S. V. Zaitsev, N. Yu. Gordeeev, V. M. Ustinov, A. E. Zhukov, A. Yu. Egorov, M. V. Maksimov, A. F. Tsatsul'nikov, N. N. Ledentsov, P. S. Kop'ev, Zh. I. Alferov, D. Bimberg
Semiconductors, Vol 31, Iss 5, pp 455-459
Properties of strained (In, Ga, Al)As lasers with laterally modulated active region
N. N. Ledentsov, D. Bimberg, Yu. M. Shernyakov, Kochnev V; M. V. Maksimov, A. V. Sakharov, I. L. Krestnikov, A. Yu. Egorov, A. E. Zhukov, A. F. Tsatsul'nikov, B. V. Volovik, V. M. Ustinov, P. S. Kop'ev, Zh. I. Alferov, A. O. Kosogov, Werner P
Applied Physics Letters, Vol 70, Iss 21, pp 2888-2890
Injection heterolaser based on an array of vertically aligned InGaAs quantum dots in a AlGaAs matrix
A. E. Zhukov, A. Yu. Egorov, A. R. Kovsh, V. M. Ustinov, N. N. Ledentsov, M. V. Maksimov, A. F. Tsatsul'nikov, S. V. Zaitsev, N. Yu. Gordeeev, P. S. Kop'ev, Zh. I. Alferov, D. Bimberg
Semiconductors, Vol 31, Iss 4, pp 411-414
Radiation characteristics of injection lasers based on vertically coupled quantum dots
S. V. Zaitsev, N. Yu. Gordeeev, Sherniakov YM; V. M. Ustinov, A. E. Zhukov, A. Yu. Egorov, M. V. Maksimov, P. S. Kop'ev, Zh. I. Alferov, N. N. Ledentsov, N. Kirstaedter, D. Bimberg
Superlattices and Microstructures, Vol 21, Iss 4, pp 559-564
Influence of mismatch of the lattice parameters on the structural, optical, and transport properties of InGaAs layers grown by molecular beam epitaxy on InP(100) substrates
A. E. Zhukov, A. Yu. Egorov, V. M. Ustinov, A. F. Tsatsul'nikov, M. V. Maksimov, N. N. Faleev, P. S. Kop'ev
Semiconductors, Vol 31, Iss 1, pp 15-18
Thermal stability of vertically coupled InAs-GaAs quantum dot arrays
A. E. Zhukov, A. Yu. Egorov, A. R. Kovsh, V. M. Ustinov, M. V. Maksimov, A. F. Tsatsul'nikov, N. N. Ledentsov, N. Yu. Gordeeev, S. V. Zaitsev, P. S. Kop'ev, Zh. I. Alferov, D. Bimberg
Semiconductors, Vol 31, Iss 1, pp 84-87
Modulation of a quantum well potential by a quantum-dot array
A. F. Tsatsul'nikov, A. Yu. Egorov, A. E. Zhukov, A. R. Kovsh, V. M. Ustinov, N. N. Ledentsov, M. V. Maksimov, A. V. Sakharov, A. A. Suvorova, P. S. Kop'ev, Zh. I. Alferov, D. Bimberg
Semiconductors, Vol 31, Iss 1, pp 88-91
Quantum-dot CW heterojunction injection laser operating at room temperature with an output power of 1 W
Yu. M. Shernyakov, A. Yu. Egorov, A. E. Zhukov, S. V. Zaitsev, A. R. Kovsh, I. L. Krestnikov, A. V. Lunev, N. N. Ledentsov, M. V. Maksimov, A. V. Sakharov, V. M. Ustinov, C. Chen, P. S. Kop'ev, Zh. I. Alferov, D. Bimberg
Technical Physics Letters, Vol 23, Iss 2, pp 149-150
Extremely low threshold AlGaAs/InGaAs quantum dot injection laser
V. M. Ustinov, A. E. Zhukov, A. Yu. Egorov, A. R. Kovsh, A. F. Tsatsul'nikov, M. V. Maksimov, S. V. Zaitsev, N. Yu. Gordeeev, P. S. Kop'ev, Zh. I. Alferov, N. N. Ledentsov, D. Bimberg
Compound Semiconductors, Iss 155, pp 557-560
Study of initial stages of the GaN growth on sapphire substrates.
W. V. Lundin, B. V. Pushnyi, A. S. Usikov, M. E. Gaevski, M. V. Baidakova, A. V. Sakharov,
Compound Semiconductors, Iss 155, pp 319-322

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1996

Identification of radiative recombination channels in quantum dot structures
A. F. Tsatsul'nikov, N. N. Ledentsov, M. V. Maksimov, A. Yu. Egorov, A. E. Zhukov, S. S. Ruvimov, V. M. Ustinov, V. V. Komin, I. V. Kochnev, P. S. Kop'ev, Zh. I. Alferov, D. Bimberg
Semiconductors, Vol 30, Iss 10, pp 938-943
Photoluminescence of arrays of vertically coupled, stressed InAs quantum dots in a GaAs(100) matrix
A. F. Tsatsul'nikov, N. N. Ledentsov, M. V. Maksimov, A. Yu. Egorov, A. E. Zhukov, V. M. Ustinov, B. V. Volovik, I. L. Krestnikov, A. R. Kovsh, A. V. Sakharov, N. A. Bert, P. S. Kop'ev, Zh. I. Alferov
Semiconductors, Vol 30, Iss 10, pp 953-958
Formation of vertically aligned arrays of strained InAs quantum dots in a GaAs(100) matrix
A. Yu. Egorov, A. E. Zhukov, P. S. Kop'ev, N. N. Ledentsov, M. V. Maksimov, V. M. Ustinov, A. F. Tsatsul'nikov, N. A. Bert, A. O. Kosogov, Zh. I. Alferov, D. Bimberg
Semiconductors, Vol 30, Iss 9, pp 879-883
Optical emission range of structures with strained InAs quantum dots in GaAs
A. Yu. Egorov, A. E. Zhukov, P. S. Kop'ev, N. N. Ledentsov, M. V. Maksimov, V. M. Ustinov, A. F. Tsatsul'nikov, Zh. I. Alferov, D. L. Fedorov, D. Bimberg
Semiconductors, Vol 30, Iss 8, pp 707-710
Ordered semiconducting-matrix quantum dot arrays
N. N. Ledentsov, V. M. Ustinov, S. V. Ivanov, B. Ya. Meltser, M. V. Maksimov, P. S. Kop'ev, D. Bimberg, Zh. I. Alferov
Uspekhi Fizicheskikh Nauk, Vol 166, Iss 4, pp 423-428
Ground state exciton lasing in CdSe submonolayers inserted in a ZnSe matrix
N. N. Ledentsov, I. L. Krestnikov, M. V. Maksimov, Ivanov SV; Sorokin SL; P. S. Kop'ev, Zh. I. Alferov, D. Bimberg, C. M. S. Torres
Applied Physics Letters, Vol 69, Iss 10, pp 1343-1345
Capacitance spectroscopy of electron energy levels in InAs quantum dots in a GaAs matrix
Brunkov PN; Konnikov SG; V. M. Ustinov, A. E. Zhukov, A. Yu. Egorov, M. V. Maksimov, N. N. Ledentsov, P. S. Kop'ev
Semiconductors, Vol 30, Iss 5, pp 492-496
An injection heterojunction laser based on arrays of vertically coupled InAs quantum dots in a GaAs matrix
Zh. I. Alferov, N. A. Bert, A. Yu. Egorov, A. E. Zhukov, P. S. Kop'ev, A. O. Kosogov, I. L. Krestnikov, N. N. Ledentsov, A. V. Lunev, M. V. Maksimov, A. V. Sakharov, V. M. Ustinov, A. F. Tsatsul'nikov AF; Yu. M. Shernyakov, D. Bimberg
Semiconductors, Vol 30, Iss 2, pp 194-196
A low-threshold injection heterojunction laser based on quantum dots, produced by gas-phase epitaxy from organometallic compounds
Zh. I. Alferov, N. Yu. Gordeeev, S. V. Zaitsev, P. S. Kop'ev, I. V. Kochnev, V. V. Komin, I. L. Krestnikov, N. N. Ledentsov, A. V. Lunev, M. V. Maksimov, S. S. Ruvimov, A. V. Sakharov, A. F. Tsatsul'nikov, Yu. M. Shernyakov, D. Bimberg
Semiconductors, Vol 30, Iss 2, pp 197-200
Photoluminescence of In_0.53Ga_0.47As/In_0.52Al_0.48As heterostructures with two-sided doping
A. F. Tsatsul'nikov, V. M. Ustinov, A. Yu. Egorov, A. E. Zhukov, M. V. Maksimov, P. S. Kop'ev
Semiconductors, Vol 30, Iss 10, pp 949-952

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