Vladimir S. Kharlamov

Vladimir S. Kharlamov was born in Leningrad (St.Petersburg now) on March 27, 1971.

He graduated:
- 1988 from Physical and Mathematical School N239 .
- 1994 (MD, with honours) and 1998 (PhD) from theChair of Solid State Physicsof Physics and Technology Departmentat the Saint-Petersburg State Technical University.

Title of the PhD thesis
Dynamic simulation of ballistic processes in multicomponent and multilayered structures under high fluence ion irradiation

After the defence he joined the scientific staff of Ioffe Institute of Russian Academy of Sciences, St.Petersburg, Russia. Since that time he is working in the Group of the Theory and Computer Simulation of Radiation Defects and Processes in Multicomponent Materials of the Department of Theoretical Bases of Microelectronics of the Solid State Electronics Division at the Ioffe Institute.

V.S.Kharlamov published more than 25 papers in Russian and International Journals. In the 1995 and 1998 he was honoured by Grants for PhD students of International Soros Science Education Program.

Fields of interest

• Radiation Damage in Multicomponent Materials;
• Physical Bases of Radiation Technologies;
• Ion Implantation and Sputtering;
• Theory and Computer Simulation of Physical Processes in Solids;

List of publications

Current position

• Researcher of the Department of Theoretical Bases of Microelectronics at the A.F.Ioffe Physical-Technical Institute of RAS, St.Petersburg, Russia.

Contact information