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Scientific Program

Monday, July 11

900- 915Opening Introduction.
Evgeni Gusev / Vladimir Osipov. Opening remarks.
 

1. High-K Technology

Session Chairs: D. Gilmer and T.-C. Chen
915-1000 Tze-Chiang Chen, IBM T.J. Watson Research Center, Yorktown Heights, NY
Keynote Presentation: High-k/Metal Gate - Mitigating CMOS Power Crisis
1000- 1030Masaaki Niwa, IMEC Team at Semiconductor Company of Matsushita Electric Industrial Co., Ltd., Leuven, Belgium
Effect of integration and processing on high-k gate stack
1030- 1100Coffee break
1100- 1130 David Gilmer, Freescale Semiconductors, Austin, USA
Effects of integration and processing on Metal-gate/High-K defects and reliability
1130- 1200Johan Klootwijk, Philips Research Laboratories, Eindhoven, The Netherlands
Characterization of ALD high-k dielectric layers in deep trenches for high capacity density applications
1200- 1230Prashant Majhi, International SEMATECH/INTEL, Austin, USA
A preliminary understanding of processing-nanostructure-property inter-relationships in High-k/Metal gate stacks
1230- 1330Lunch
 

2. Defects in High-k Dielectrics: Characterization

Session Chairs: E. Vogel and T.P. Ma
1400- 1430Douglas Buchanan, University of Manitoba, Winnipeg, Canada
The scaling of deep-sub-tenth-micron CMOS technology: Metal gates, high-k dielectrics and electrically active defects on an atomic scale
1430- 1500 T.P. Ma, Yale University, New Haven, USA
Inelastic electron tunneling spectroscopy study of traps in high-k gate dielectrics
1500- 1530 Gilles Reimbold, LETI-CEA, Grenoble, France
Characterization and modeling of defects in high-k layers through fast electrical transients measurements
1530- 1600Coffee break
1600- 1630 Eric Vogel, NIST, Gaithersburg, USA
Characterization of electrically active defects in high-k gate dielectrics using charge pumping
1630- 1700 Luigi Pantisano, IMEC, Leuven, Belgium
Impact of the high-k properties (and defects) on the MOSFET electrical characteristics

1730- 2100Monday Evening: Boat Trip on Neva River and Reception

Tuesday, July 12

 

3. High-K Processing and Defects

Session Chairs: B. Lee and P. McIntyre
900 - 1300 Excursion around centre of St Petersburg and to the Hermitage
1300- 1400Lunch
1400 - 1430 Paul McIntyre, Stanford University, USA
Temperature-dependent structural evolution and defects in metal oxide-based High-k gate dielectrics.
(with H. Kim, D.Chi, K.C. Saraswat, C. M. Perkins, B.B. Triplett and S. Stemmer).
1430- 1500 Kaupo Kukli, University of Tartu, Estonia and University of Helsinki, Finland
Disorder-induced trap densities in atomic layer deposited high-permittivity metal oxides
1500- 1530 Robert Wallace, University of Texas, Dallas, USA
Interdiffusion studies of high-k gate stack constituents with silicates, aluminates and oxides
1530- 1600Coffee break
1600- 1630 Andrei Zenkevich, Moscow Engineering Physics Institute, Russia
XPS/LEIS study of high-k rare earth (Lu, Yb) oxides and silicates on Si: the effect of annealing on microstructure evolution.
1630- 1700 Byoung Lee, SEMATECH/IBM, Austin, USA
Transient charging effects and its implication to the reliability of high-k dielectrics
1700- 1730Alex Demkov, University of Texas, Austin, USA
Atomic design of advanced gate stacks for CMOS technology

Wednesday, July 13

 

4. High-K Theory

Session Chairs: S. Pantelides and J. Robertson
900 - 930John Robertson, University of Cambridge, UK
Defect energy levels in high-k gate oxides
930 - 1000Vincenzo Fiorentini, University of Cagliari, Monserrato, Italy
Electronic structure of native defects in high-k oxides: an exploration within self-interaction corrected DFT
(with Giorgia M. Lopez, and Alessio FIlippetti)
1000- 1030Alexander Bagatur'yants, Photochemistry Center, Russian Academy of Sciences, Moscow, Russia
Ab initio cluster calculations of oxygen vacancies in high-k dielectrics
1030- 1100Coffee break
1100- 1130 Sokrates Pantelides, Vanderbilt University, Nashville, USA
Defect-related issues in high-k dielectrics
1130- 1200Jacob Gavartin, University College London, UK
Modeling residual charge in high-k dielectrics and at their interface with silicon
1200- 1230Wanda Andreoni/A. Curioni, IBM Zurich Research Laboratory, Switzerland
Effects of Nitrogen and Hafnium on the Dielectric, Structural and Electronic Properties of Silicon Dioxide
(with C.A. Pignedoli)
1230- 1330Lunch
 

5. Electrically Active Defects

Session Chairs: M. Fanciulli and A. Dimoulas
1400 - 1430Andre Stesmans, Katholieke University Leuven, Belgium
Probing of point defects and traps in stacks of ultrathin high-k metal oxides on (100)Si by electron spin resonance: interfaces, interlayers, and N incorporation
1430- 1500 Gennadi Bersuker, SEMATECH, Austin, USA
Mechanism of charge trapping reduction in scaled high-k gate stacks
1500- 1530 Athanasios Dimoulas, Institute of Materials Science, NCSR "Demokritos", Athens, Greece
Interface and bulk semiconductor defects in high-k/Ge structures
1530- 1600Coffee break
1600- 1630 Jurgen Von Bardeleben, University of Paris, France
Defect analysis in Si/High k systems by EPR and IBA
(with J.L.Cantin and J.J.Ganem)
1630- 1700

Marco Fanciulli, National Institute for the Physics of Matter (INFM), Milan, Italy
Defects at the high-k/semiconductor interfaces investigated by spin-dependent spectroscopies

1700- 1730 Karol Frohlich, Slovak Academy of Science, Bratislava, Slovak Republic
Fixed oxide charge in MOCVD grown high-k gate stacks
 

Poster Session and Reception

(House of St Petersburg Scientists + guided tour of the House)

Thursday, July 14

 

6. Interfaces

Session Chairs: A. Pasquarello and E. Garfunkel
900 - 930Eric Garfunkel, Rutgers University, Piscataway, USA
Interface issues in high-k dielectric and metal gate electrode gate stacks
930- 1000Joerg Osten, Institute for Semiconductor Devices and Electronic Materials, University of Hannover, Germany
Interface formation during epitaxial growth of binary metal oxide on silicon
1000- 1030Jim Greer, National Microelectronics Research Center, Cork, Ireland
Oxygen vacancies at Si/SiO2 interfaces
(w/ G. Bersuker & A. Korkin)
1030- 1100Coffee break
1100- 1130Alfredo Pasquarello, EPFL-SB-ITP-CSEA, Lausanne, Switzerland
Dielectric and infrared properties of ultrathin SiO2 oxides on Si(100)
1130- 1200Gianfranco Cerofolini, ST Microelectronics, Catania, Italy
The (100) surface of semiconductor silicon (in practical conditions): Preparation, evolution, passivation
1200- 1230Andrey Knizhnik, Kintech, Moscow, Russia
Modeling of structure of defects at high-k oxide / metal interfaces
1230- 1330Lunch
 

7. Processing, Characterization and Devices

Session Chairs: M. Nafria and T. Gustafssona
1400 - 1430Torgny Gustafsson, Rutgers University, Piscataway, USA
Structure, composition and order at interfaces of crystalline oxides and other high-k materials on silicon
1430- 1500

Albena Paskaleva, Bulgarian Academy of Sciences, Sofia
The influence of defects on the conduction mechanisms in thin high-k dielectrics

1500- 1530 Vladimir Gritsenko, Institute of Semiconductor Physics, Novosibirsk, Russia
Electronic structure of ZrO2 and HfO2
(w/ V. M. Tapilin, K. A. Nasyrov, C. W. Kim)
1530- 1600Coffee break
1600- 1630 Montserrat Nafria, University Autonoma Barcelona, Spain
High-k gate stacks electrical characterization at the nanoscale using Conductive-AFM
1630- 1700Vladimir Osipov, A.F. Ioffe Phys.-Technical Institute, St.Petersburg, Russia
New type of defects in nano-diamond structures
1700- 1730Art Edwards, US Air Force Research Lab/Space Vehicle Division, Albuquerque, USA
On the importance of atomic packing in determining dielectric permittivities
( with R. A. B. Devine, A. Pineda, and T. Busani)
1730- 1800 Closing remarks


Poster Sessions

 

Defect in High-K Dielectric

P01S. Duenas1, H. Castan1, H. Garcia1, J. Barbolla1, K. Kukli2,3, M. Ritala3 and M. Leskela3
Electrical defects on Atomic Layer Deposited HfO2 films on silicon: Influence of precursor chemistries and substrate treatment.
1 E.T.S.I. Telecomunicacion, Universidad de Valladolid, Spain.
2 Institute of Experimental Physics and Technology, University of Tartu, Estonia
3 Department of Chemistry, University of Helsinki, Finland
P02J. Felix1 , D. Fleetwood2 and E.P. Gusev3
Radiation effects in High-K gate stacks.
1 Sandia National Lab, USA
2 Vanderbilt University, Nashville, USA
3 IBM T.J. Watson Research Center, Yorktown Heights, USA
P03A. V. Shaposhnikov1, V. A. Gritsenko1 and V.G. Lifshits2
Electronic structure of Gd2O3 from first-principle calculations.
1 Institute of Semiconductor Physics, Novosibirsk, Russia
2 Institute for Automation and Control Processes, Vladivostok, Russia
P04 R.G. Useinov1, G. I. Zebrev2 and V. V. Emelyanov1
Comparative analysis of radiation hardness for SiO2 and High-K insulators.
1 Research Institute of Scientific Instruments, Lytkarino, Moscow region, Russia
2 Moscow Engineering Physics Institute, Russia
P05D. V. Gritsenko1, S. S. Shaimeev1, V. V. Atuchin1, K. A. Nasyrov2 and V. G. Lifshits3
Two band charge transport in Si/TiO2/Al structures.
1 Institute of Semiconductor Physics, Novosibirsk, Russia
2 Institute of Automation and Electrometry, Novosibirsk, Russia
3 Institute for Automation and Control Processes, Vladivostok, Russia
P06K.Ulutas and D.Deger
Dielectric polarization in anodic Al2O3 thin films.
Istanbul University, Turkey
P07G.A. Maximov, D.O. Filatov, D.A. Antonov, A.V. Kruglov and D.A. Saveliev
Investigation of the electronic properties of thin dielectric films by Electric Force Microscopy
Research and Educational Center for Physics of Solid State Nanostructures University of Nizhny Novgorod, Russia
P08V.E.Drozd, A.P.Baraban, I.O.Nikiforova.
ML - ALD synthesis of tailored high-K heterooxides.
St Petersburg State University, Russia
P09A.A. Balandin and W.L Liu
Thermal and electrical conduction in semiconductor quantum dot arrays: The role of defects and interface scattering
University of California - Riverside, USA
P10Sergei Koveshnikov1,2, Wilman Tsai1 and Jack Lee2
Scaling PVD HfO2, HfO2/TiO2 and Y2O3 films to <0.6 nm by using in-situ Ar/O2 plasma oxidation
1 Intel Corporation, Santa Clara, USA.
2 University of Texas at Austin, USA
P11Yu. Lebedinskii, A. Zenkevich, M. Pushkin, V. Troyan and V.Nevolin
Can LEIS spectra contain information on surface electronic structure ofhigh-k dielectrics?
Moscow Engineering Physics Institute, Russia
P12D. Shamiryan, V. Paraschiv, M. Claes and W. Boullart
Low substrate damage high-k removal after gate patterning
IMEC, Leuven, Belgium
P13Yu.Yu. Lebedinskii1, A. Zenkevich1 and E.P. Gusev2
Monitoring of Fermi level variations at metal/high-k interface with in situ XPS
1 Moscow Engineering Physics Institute, Russia
2 IBM Semiconductor Research and Development Center, New York, USA