Surface Analysis GroupThe Surface Analysis Group at Ioffe Physico-Technical Institute was created in 1990. The group carries out research projects in the field of surface-sensitive techniques and their applications. The group also carries out researches and diagnostic in various surface/interface-related subjects in collaboration with scientists within Ioffe Institute and with academic institutes, universities, innovation enterprises and manufacturers in Russia and in other countries. Areas of application include investigations of coatings, thin films, various semiconductor structures based on SiGe, SiC, Si:Er, III-V compounds based on (AlGa)As, (InGa)(AsP), (InGa)(AsSb), (InAlGa)N, II-VIs, microelectronic and optoelectronic device structures (light-emitting diodes, diode heterolasers, HEMTS, photorecievers, solar cells, multy-quantum-well structures, structures with planar-doping, etc.), metal-semiconductor structures. A surface, interface and in-depth profiling analysis of the chemical states and of concentrations of matrix elements, dopants, and impurities is performed using dynamic SIMS, XPS, AES, and REELS surface-sensitive techniques. Surface-sensitive techniques and instrumentationThe Surface Analysis Group is well equipped with modern analytical instruments:
The Surface Analysis Group is a member of the Russian North-West Regional Center of Shared Equipment "Characterization for Material Science and Advanced Technologies". Contact:
The Center for the Physics of Nanoheterostructures Ioffe Physico-Technical Institute of the Russian Academy of Sciences, 26 Polytechnicheskaya St., St Petersburg, 194021, The Russian Federation Tel: +7-(812) 292 7362, Fax: +7-(812) 297 1017, E-mail: boris.ber@mail.ioffe.ru |