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The Laboratory of Physics of Semiconductor Heterostructures is a department of the Centre of Nanoheterostructures of the Ioffe Institute. The laboratory is headed by Corresponding Member of the Russian Academy of Sciences, Doctor of Sciences, Professor Victor M. Ustinov.
The Laboratory of Physics of Semiconductor Heterostructures was founded at Ioffe Institute in 1999 by Nobel Prize Laureate,
Academician Zhores I. Alferov (order № 705-k from 28.12.1999).
The one of the most important trend of modern nanotechnology is a development of epitaxial growth technology of A3B5 semiconductor compound heterostructures. These nanostructures is the basis of the
modern solid-state electronic and optoelectronic semiconductor devices.
The laboratory main research areas include the development of epitaxial growth technology of the III-AsP and III-N heterostructures by molecular beam epitaxy (MBE) and metalorganic vapor phase epitaxy (MOVPE) methods, formation and investigation of the semiconductor devices based on the heterostructures.
Currently, the research in the laboratory is focused on the following subjects:
Study of the MOVPE growth of the group III nitrides and the heterostructures on their basis.
Synthesis and investigation of the heterostructures and devices based on the A3B5 semiconductor compounds, grown by molecular beam epitaxy.
The research in the laboratory is carried out in collaboration with other departments of the Ioffe Institute, with Russian and international scientific organizations. The results of the research work are published in leading Russian and international scientific journals and presented on the national and international conferences and symposia.
The research is funded by Russian and international organizations, such as the Russian Foundation for Basic Research (RFBR), the Russian Academy of Sciences (RAS) (research programs of the Presidium of the Russian Academy of Sciences), the Ministry of Education and Science of the Russian Federation, and others.
The achievements of the group confirmed by invited talks at Russian and international scientific conferences, by national and international awards for scientific work, and by the registered results of intellectual activity with legal protection (patents).
A number of innovative companies, which implement the results obtained in the laboratory, were organized by the laboratory employees:
Innolum GmbH (Germany),
VI Systems GmbH (Germany),
"Connector Optics" (St. Petersburg),
"Optogan" (currently "LED-Energoservice", St. Petersburg),
"Monolum" (St. Petersburg).
The All-Russian Conference "Gallium, indium and aluminum nitrides - structures and devices” was initiated by the laboratory
staff members of the MOVPE epitaxy of III-N heterostructures group, which are constant members of the organize committee.
The laboratory staff includes 33 scientists, of which 3 Corresponding Member of Russian Academy of Sciences, 7 Doctors of Sciences and 14 PhDs.
The research activity in the laboratory is carried out with participation of the PhD/master degree students from
Ioffe Institute,
Saint-Petersburg Electrotechnical University ETU "LETI",
Peter the Great St. Petersburg Polytechnic University and
Saint Petersburg Academic University (SPbAU RAS).
Old site of the Laboratory of Physics of Semiconductor Heterostructures.
