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Nanoscale Structures and Devices Group

Group Staff
Collaborators
Recent Publications
Books
Contact Information

The Group is led by Prof. Yuri Shreter at Ioffe Institute of Russian Academy of Science.

The main directions of the research are:

1. III-nitride structures and devices with quantum wells and superlattices
2. Semiconductor - gas discharge structures: physics and application
3. Photonics of Micro and Nanostructures
4. Design a software and hardware for experiment support and measurements

1. Y.T.Rebane, Y.G.Shreter, B.S.Yavich, V.E.Bougrov, S.I.Stepanov, W.N.Wang. Light Emitting Diode with Charge Asymmetric Resonance Tunneling.
   Phys.stat.sol.(a) 180, 121 (2000)
2. Yu.A. Astrov and H.-G. Purwins, Plasma spots in a gas discharge system: birth, scattering and formation of molecules.
   Phys. Lett. A 283, 349 (2001)
3. O.A.Usov, A.V.Klochkov, A XFSWIN program for EXAFS analysis of matter.
   RSNE-2001, III National Conference for Appl.of X-ray, Synchrotron, Neutron and Electron Radiation to Material Studies, 21-25.05.2001, Moscow, Russia, p.435.
4. A.A. Efremov, N.I. Bochkareva, R.I. Gorbunov, D.A. Lavrinovich, Y.T.Rebane, D.V. Tarkhin, Y.G. Shreter, Effect of the Joule heating on the quantum efficiency and choice of thermal conditions for high-power blue InGaN/GaN LEDs
   Semiconductors, v.40, 605 (2006)
5. N.I. Bochkareva, V.V. Voronenkov, R.I. Gorbunov, A.S. Zubrilov, Y.S. Lelikov, P.E. Latyshev, Y.T. Rebane, A.I. Tsyuk, Y.G. Shreter, Defect-related tunneling mechanism of efficiency droop in III-nitride light-emitting diodes.
   Appl. Phys. Lett., 96, 133502 (2010)

1. Ю.Г. Шретер, Ю.Т. Ребане, В.А.Зыков, В.Г.Сидоров.
   Широкозонные полупроводники, Санкт-Петербург, Наука, 2001, 125 стр.

   Y.G.Shreter, Y.T.Rebane, V.A.Zikov, V.G.Sidorov
   Wide-energy-gap semiconductors, St.Petersburg Technical University, Science, 2001, 125 pages.

2. Polymers, Phospors, and Voltaic for Radioisotope Microbatteries.
   Ed. by Kenneth E. Bower, Yuri A. Barbanel', Yuri Shreter, George Bohnert. CRC Press, USA, 2002.

3. А.А. Ефремов, Ю.Т. Ребане, Ю.Г. Шретер
   Исследование эффективности In_xGa_1-xN/GaN светодиодов.
   Изд. 2008 Санкт-Петербург, Изд. СПбГПУ, 2008, 120 стр.

   A.A. Efremov, Y.T.Rebane, Y.G.Shreter.
   The efficiency of the In_xGa_1-xN/GaN light-emitting diodes.
   St.Petersburg Technical University, 2008, 120 pages.
   

   Contact Information

   Contact Person: Professor Yuri Shreter

   Phone: +7 (812) 297 9152, +7 (812) 297 3256
   Fax: +7 (812) 297 1017, +7 (812) 297 3256
   E-mail:Shreter@peterlink.ru

   Laboratory of Nonequilibrium Processes in Semiconductors
   Ioffe Physico-Technical Institute, Russian Academy of Sciences
   Politekhnicheskaya 26,
   St.Petersburg, 194021 Russia
   
   

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