Nanoscale structures and devices

Group staff
Recent publications
Contact information

The Group is led by Prof. Yuri Shreter at Ioffe Institute of Russian Academy of Science.

The main directions of the research are:

  1. III-nitride structures and devices with quantum wells and superlattices
  2. Photonics of Micro and Nanostructures
  3. Software and hardware design for the experiment support and measurements

Group staff

Yuri G. Shreter Head of the Group
Ph.D., DSc, Professor,
Leading Researcher
Alexander V. Klochkov Senior Researcher
Oleg A. Usov Ph.D.,
Senior Researcher
Natalia I. Bochkereva Ph.D.,
Senior Researcher
Ruslan I. Gorbunov Ph.D.,
Senior Researcher
Denis Evgraphov Postgraduate Student
Alexander I. Tsyuk Postgraduate Student
Vladislav V. Voronenkov Postgraduate Student
Nikita E. Pozdnyakov Student
Nguyen Xuan Truong Student


Yu.T. Rebane, Ph.D. Sector of Theory of Optical and Electrical Phenomena in Semiconductors, Ioffe Institute
D.V.Tarkhin Laboratory of Nonequilibrium Processes in Semiconductors, Ioffe Institute
V.E. Bugrov, Ph.D. Sector of Solid State Theory, Ioffe Institute

Recent publications

  1. Y.T.Rebane, Y.G.Shreter, B.S.Yavich, V.E.Bougrov, S.I.Stepanov, W.N.Wang. Light Emitting Diode with Charge Asymmetric Resonance Tunneling.
    Phys.stat.sol.(a) 180, 121 (2000)
  2. Yu.A. Astrov and H.-G. Purwins, Plasma spots in a gas discharge system: birth, scattering and formation of molecules.
    Phys. Lett. A 283, 349 (2001)
  3. O.A.Usov, A.V.Klochkov, A XFSWIN program for EXAFS analysis of matter.
    RSNE-2001, III National Conference for Appl.of X-ray, Synchrotron, Neutron and Electron Radiation to Material Studies, 21-25.05.2001, Moscow, Russia, p.435.
  4. A.A. Efremov, N.I. Bochkareva, R.I. Gorbunov, D.A. Lavrinovich, Y.T.Rebane, D.V. Tarkhin, Y.G. Shreter, Effect of the Joule heating on the quantum efficiency and choice of thermal conditions for high-power blue InGaN/GaN LEDs
    Semiconductors, v.40, 605 (2006)
  5. N.I. Bochkareva, V.V. Voronenkov, R.I. Gorbunov, A.S. Zubrilov, Y.S. Lelikov, P.E. Latyshev, Y.T. Rebane, A.I. Tsyuk, Y.G. Shreter, Defect-related tunneling mechanism of efficiency droop in III-nitride light-emitting diodes.
    Appl. Phys. Lett., 96, 133502 (2010)


  1. Ю.Г. Шретер, Ю.Т. Ребане, В.А.Зыков, В.Г.Сидоров.
    Широкозонные полупроводники, Санкт-Петербург, Наука, 2001, 125 стр.

    Y.G.Shreter, Y.T.Rebane, V.A.Zikov, V.G.Sidorov
    Wide-energy-gap semiconductors, St.Petersburg Technical University, Science, 2001, 125 pages.

  2. Polymers, Phospors, and Voltaic for Radioisotope Microbatteries.
    Ed. by Kenneth E. Bower, Yuri A. Barbanel', Yuri Shreter, George Bohnert. CRC Press, USA, 2002.

  3. А.А. Ефремов, Ю.Т. Ребане, Ю.Г. Шретер
    Исследование эффективности InxGa1-xN/GaN светодиодов.
    Изд. 2008 Санкт-Петербург, Изд. СПбГПУ, 2008, 120 стр.

    A.A. Efremov, Y.T.Rebane, Y.G.Shreter.
    The efficiency of the InxGa1-xN/GaN light-emitting diodes.
    St.Petersburg Technical University, 2008, 120 pages.

Contact information

Contact Person: Professor Yuri Shreter

Phone: +7 (812) 297 9152, +7 (812) 297 3256
Fax: +7 (812) 297 1017, +7 (812) 297 3256

Nanoscale structures and devices group
Laboratory of nonequilibrium processes in semiconductors
Ioffe Institute, Russian academy of sciences
Politekhnicheskaya 26,
St.Petersburg, 194021 Russia