Publications and Awards

Awards

Prize named by Ya.I. Frenkel

2007

V.I. Ivanov-Omskii, V.A. Smirnov, B. A. Matveev, and N. M. Stus' ( Lab. by V.I. Ivanov-Omskii, lab. by Yu.P. Yakovlev)

Discovery and investigation of negative luminescence phenomenon in semiconductors, and creating devices

Prize named by A.F. Ioffe

2005

M.P. Mikhailova, K.D. Moiseev, R.V. Parfeniev, A.N. Titkov, and Yu.P. Yakovlev

The II type heterojunctions based on A³B⁵ Semiconductors (GaSb-InAs system): creation, physical properties and application in optoelectronics

Ioffe Institute prize for the best works

2007

K.D. Moiseev, V.A. Berezovets, M.P. Mikhailova, R.V. Parfeniev, and Yu.P. Yakovlev  (Lab. by Yu.P. Yakovlev, lab. by R.V. Parfeniev)

Semimetal-insulator transition in 2D-system at the type II GaInAsSb/p-InAs single heterointerface in high magnetic fields

2005

V.V. Sherstnev, A.M. Monakhov, A. Krier, Yu.P. Yakovlev, and N.S. Averkiev

Semiconductor WGM lasers for Mid-IR spectral range

2001

N. V. Zotova, S. A. Karandashev, B. A. Matveev, M. A. Remenniy N. M. Stus', and G. N. Talalakin

Diode optopairs of negative and positive contrast for the 3-6 µm spectral range

1999

V.A. Berezovets, R.V. Parfeniev, M.P. Mikhailova, K.D. Moiseev, Rozov A.E., and Yu.P. Yakovlev

Quantum magnetotransport in semimetal canal at the II type heteroboundary in the GaInAsSb/InAs system

1994

K.D. Moiseev, O.G. Ershov, M.P. Mikhailova, Yu.P. Yakovlev, and G.G.Zegrya

Coherent generation (λ = 3÷4 µm) in the laser structures based on the p-GaInAsSb/p-InAs isotype II type heterojunction