|
|
 |
|
 |
|
Research Activities
Physics of III-V-based materials and devices.
Fundamental research.
- Investigations of electrical, optical and recombination phenomena in narrow band gap III-V compounds, as well as I and II type III-V heterostructures
- Electron and hole transport
- Defects and impurities
- Surface and interface phenomena
- Radiative and nonradiative recombination
- Stimulated emission, electroluminescence
- Impact ionization and photocurrent multiplication processes
- Quantum phenomena in low-dimensional heterostructures
- Quantum magnetotransport
- New principles of tunable lasers for IR spectral region
- R&D high-speed and high efficiency photodiodes for MID IR spectral range
- R&D lasers for MID IR spectral range (tunable lasers, tunnel-injection lasers, WGM lasers)
Technology of III-V semiconductor heterostructures
LPE (Liquid Phase Epitaxy)
- GaSb-based materials (GaSb, InAsSb, GaInAsSb, GaAlSb, GaAlAsSb) and heterostructures
- InAs-based materials (InAs, InAsSb, GaInAsSb, InAsSbP) and heterostructures
- InSb
- nanoheterostructures
MOVPE (Metaorganic Vapor Phase Epitaxy)
- GaSb-based materials (GaSb, GaAsSb, GaInAsSb, GaAlAsSb) and heterostructures
- InAs-based materials (InAs, InAsSb, InAsSbP) and heterostructures
Processing III-V and II-VI - based materials and devices
- Photolithography
- Chemical and electrochemical etching
- Ohmic contacts
- Service oxidation
- Design of novel device geometry
- LEDs
- Lasers
- Photodiodes
- Optically immersed LEDs and photodiodes
- Electronic devices (drivers and temperature controllers for LEDs;amplifiers and temperature controllers for PDs)
|
|
 |
|
 |
|
