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Lundin Wsevolod Vladimirovich |
Birthplace:
1972, St. Petersburg (Leningrad), Russia.
Scientific degree:
Ph.D., 1998
“Epitaxial GaN layers and multilayer GaN/AlGaN heterostructures. Growth technology development and properties investigations”
The thesis was defended at the Ioffe Institute.
Current position:
Senior researcher
Work experience:
1998 - present time, Ioffe Institute.
1995 - present time, Submicron Heterostructures for Microelectronics, Research & Engineering Center, RAS.
2009 - present time, Academic University, SPbAU RAS, associate professor.
Education:
1988 - 1995 – Leningrad Electrical Engineering Institute (Saint Petersburg Electrotechnical University ETU "LETI"), Ioffe Institute education department of Optoelectronics.
1995 - 1998 – Postgraduated course at Leningrad Electrical Engineering Institute (Saint Petersburg Electrotechnical University ETU "LETI"), Ioffe Institute education department.
Scientific awards:
2008, Award of the Centre of Nanoheterostructures of Ioffe Institute for work “Role of the hydrogen in MOVPE process of group III nitrides”.
2009, Award of the Centre of Nanoheterostructures of Ioffe Institute for work “Light-emitting diodes based on gallium nitride, emitting in the visible range”.
2015, Certificate of Outstanding Contribution in Reviewing from Journal of Crystal Growth.
2018, Award of the Centre of Nanoheterostructures of Ioffe Institute for work “Light-emitting diodes with monolithic active region based on III-N heterostructures”.
Membership in the scientific societies and editorial board of the journals:
Associated editor of “Progress in Crystal Growth and Characterization of materials” (Elsevier).
Program Committee member of EW MOVPE 2011, 2013, 2015, 2017.
Program Committee member of IC-MOVPE 2014, 2016, 2018, 2020.
Program Committee member of ISGN 2012, 2014, 2015.
Research interests:
Development of technology and equipment for III-N MOVPE.
Teaching:
Development of the education course “MOVPE epitaxy” at the Academic University, SPbAU RAS (Science and education center of nanotechnologies of RAS).
Ph.D. theses adviser:
Zavarin E.E. (2008), Rozhavskaya M.M. (2013).
Patents:
RU № 2504048 «Semiconductor electroluminescent emitter»;
RU № 102849 «Light-emitting crystal»;
RU № 119165 «Semiconductor light-emitting heterostructure (variants)»;
RU № 124441«Semiconductor electroluminescent emitter»;
RU № 2371806 «The method for producing nitride semiconductor and nitride semiconductor device of p-type»;
RU № 2369942 «Light-emitting device based on nitride semiconductor»;
RU № 2426197 «Nitride semiconductor device»;
RU № 2650352 «Device for second harmonic generation of optical emission»;
RU № 2650597 «Device for second harmonic generation of optical emission»;
RU № 2642472 «Device for second harmonic generation of optical emission»;
RU № 2414549 «Method to growth of the gallium nitride layer and method to produce of the nitride semiconductor device»;
RU № 169283 «Heterostructure field–effect transistor based on InGaAlN/As»;
RU № 169284 «Heterostructure field effect transistor»;
RU № 2673515 «Method to supply of carrying gases into the reactor in order to growth epitaxial structures based on metals of group III nitride and device for the implementation»;
Publications:
Author and co-author of more, than 250 publications in leading Russian and international scientific journals and proceedings of the All-Russian and international conferences and symposia.
Including publications indexed by WoS 205 and Scopus 217.
h-index of WoS 15 (november 2018).
The publication list can be found at
http://www.researcherid.com/rid/A-9137-2014
