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The group of MOVPE epitaxy and investigations of the properties of nano-heterostructures based on group III nitrides
Defense of the Ph.D. theses:
Usov S.O., 2016, “Heterostructures for visible range light-emitting diodes and high electron mobility transistors based on quantum sized layers InGaN, InAlN and short-period superlattices InGaN/GaN”,
Ph.D. theses adviser A.F. Tsatsulnikov (Ph.D.).
Rozhavskaya M.M., 2013“Synthesis of the III-N micro- and nanostructures on sapphire and silicon substrates by the MOVPE technique”,
Ph.D. theses adviser W.V. Lundin (Ph.D.).
Sizov V.S., 2010, “Features of the InGaN/(In,Al)GaN active region formation for light-emitting diodes”,
Ph.D. theses adviser A.F. Tsatsulnikov (Ph.D.).
Zavarin E.E., 2008, “Investigations of the nature of the gas-phase epitaxy process of the GaN and AlGaN layers from the metal-organic compounds and optimization of the epitaxial growth on sapphire and SiC substrates for device applications”,
Ph.D. theses adviser W.V. Lundin (Ph.D.).
Sizov D.S., 2006, “Light-emitting devices based on the InGaN quantum dots: epitaxial growth technology and properties investigations”,
Ph.D. theses adviser Dr. Sc. (Phys.-Math.), Prof. N.N. Ledentsov.
Sakharov A.V., 2000, “Optical properties of III-nitride based layers and heterostructures”,
Ph.D. theses adviser Dr. Sc. (Phys.-Math.) Prof. N.N. Ledentsov.
Teaching activity:
W.V. Lundin, associate professor.
Academic University, SPbAU RAS (Science and education center of nanotechnologies of RAS),
Education (lectures) course “MOVPE epitaxy” (since 2009).
The students of the Ioffe Institute education departments of a number of Saint-Petersburg universities, including Baltic State Technical University "Voenmeh" D.F. Ustinov, Saint-Petersburg Electrotechnical University ETU "LETI", Peter the Great St. Petersburg Polytechnic University and Saint Petersburg Academic University (SPbAU RAS) perform practice studies in the laboratory.
